component
UF630L-TA3-T
Public Made by Adomby adom
UTC Unisonic Tech MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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UF630L-TA3-T
UTC Unisonic Tech · MOSFETs · TO-220
UF630L-TA3-T from UTC Unisonic Tech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±20 V (VGSS). |
| 2 | D | passive | Drain terminal; the part is rated for 200 V drain-source voltage (VDSS) and 9 A continuous drain current (ID). |
| 3 | S | passive | Source terminal, the reference for the 200 V VDSS and ±20 V VGSS ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 200 | V | 3 | |||
| Drain-Gate Voltage | VDGR | 200 | V | RGS = 20kΩ, TJ =25°C ~125°C | 3 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 3 | ||
| Continuous Drain Current | ID | 9 | A | 3 | |||
| Pulsed Drain Current | IDM | 36 | A | Note 2: pulse width limited by TJ | 3 | ||
| Single Pulse Avalanche Energy | EAS | 150 | mJ | L = 4mH, IAS = 8.3A, VDD = 20V, RG = 25 Ω, Starting TJ = 25°C | 3 | ||
| Power Dissipation (TO-220/TO-262) | PD | 73 | W | TO-220/TO-262 package; TC = 25°C (table header) | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS = 0V, ID = 250μA | 4 | ||
| On-State Drain Current | ID(ON) | 9 | A | VDS > ID(ON) x RDS(ON)MAX, VGS = 10V | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS = Rated BVDSS, VGS = 0V | 4 | ||
| Forward Gate-Source Leakage Current | IGSS | 100 | nA | VGS = 20V, VDS = 0V | 4 | ||
| Reverse Gate-Source Leakage Current | IGSS | -100 | nA | VGS = -20V, VDS = 0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VGS = VDS, ID = 250μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 0.25 | 0.4 | Ω | VGS = 10V, ID = 5A | 4 | |
| Total Gate Charge | QG | 19 | 30 | nC | 4 | ||
| Drain-Source Diode Forward Voltage | VSD | 2 | V | VGS =0V, IS = 9.0A | 4 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 9 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 36 | A | 4 | |||
| Junction to Ambient (TO-220) | θJA | 62.5 | °C/W | TO-220/TO-262 (grouped with TO-220F1/TO-220F/TO-220F2 in printed layout) | 3 | ||
| Junction to Case (TO-220) | θJC | 1.71 | °C/W | TO-220/TO-262 | 3 |
CAD (KiCad official)
- Symbol:
UF630L-TA3-T - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
uf630l-ta3-t-etched.step/uf630l-ta3-t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);uf630l-ta3-t.step/uf630l-ta3-t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (8 pp, sha256
dbcdfdb55d19c861, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# UF630L-TA3-T
**UTC Unisonic Tech** · MOSFETs · TO-220
UF630L-TA3-T from UTC Unisonic Tech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±20 V (VGSS). |
| 2 | D | passive | Drain terminal; the part is rated for 200 V drain-source voltage (VDSS) and 9 A continuous drain current (ID). |
| 3 | S | passive | Source terminal, the reference for the 200 V VDSS and ±20 V VGSS ratings. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 200 | V | | 3 |
| Drain-Gate Voltage | VDGR | | | 200 | V | RGS = 20kΩ, TJ =25°C ~125°C | 3 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 3 |
| Continuous Drain Current | ID | | | 9 | A | | 3 |
| Pulsed Drain Current | IDM | | | 36 | A | Note 2: pulse width limited by TJ | 3 |
| Single Pulse Avalanche Energy | EAS | | | 150 | mJ | L = 4mH, IAS = 8.3A, VDD = 20V, RG = 25 Ω, Starting TJ = 25°C | 3 |
| Power Dissipation (TO-220/TO-262) | PD | | | 73 | W | TO-220/TO-262 package; TC = 25°C (table header) | 3 |
| Junction Temperature | TJ | | | 150 | °C | | 3 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 3 |
| Drain-Source Breakdown Voltage | BVDSS | 200 | | | V | VGS = 0V, ID = 250μA | 4 |
| On-State Drain Current | ID(ON) | 9 | | | A | VDS > ID(ON) x RDS(ON)MAX, VGS = 10V | 4 |
| Drain-Source Leakage Current | IDSS | | | 10 | μA | VDS = Rated BVDSS, VGS = 0V | 4 |
| Forward Gate-Source Leakage Current | IGSS | | | 100 | nA | VGS = 20V, VDS = 0V | 4 |
| Reverse Gate-Source Leakage Current | IGSS | | | -100 | nA | VGS = -20V, VDS = 0V | 4 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VGS = VDS, ID = 250μA | 4 |
| Static Drain-Source On-State Resistance | RDS(ON) | | 0.25 | 0.4 | Ω | VGS = 10V, ID = 5A | 4 |
| Total Gate Charge | QG | | 19 | 30 | nC | | 4 |
| Drain-Source Diode Forward Voltage | VSD | | | 2 | V | VGS =0V, IS = 9.0A | 4 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 9 | A | | 4 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | 36 | A | | 4 |
| Junction to Ambient (TO-220) | θJA | | 62.5 | | °C/W | TO-220/TO-262 (grouped with TO-220F1/TO-220F/TO-220F2 in printed layout) | 3 |
| Junction to Case (TO-220) | θJC | | 1.71 | | °C/W | TO-220/TO-262 | 3 |
## CAD (KiCad official)
- Symbol: `UF630L-TA3-T`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `uf630l-ta3-t-etched.step` / `uf630l-ta3-t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `uf630l-ta3-t.step` / `uf630l-ta3-t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UTC Unisonic Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588897010632441856) (8 pp, sha256 `dbcdfdb55d19c861`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/uf630l-ta3-t-datasheet.pdf)