component

UCC57142ADBVR

Public Made by Adom

by adom

Texas Instruments , SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenticucc57142adbvrfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
ucc57142adbvr / README.md
History Download
Ray Publish 0.1.0 cca2db9 23h ago

UCC57142ADBVR

Texas Instruments · IC · SOT-23-6

UCC57142ADBVR from Texas Instruments, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OCP input Current sense input; when an overcurrent signal is detected the driver pulls EN/FLT low and forces OUT low (abs max -10 V to 12 V, recommended -5 V to 10 V).
2 COM power_in Device ground, the reference for all device voltages.
3 OUT output Output of the driver, typical 3 A sink and 3 A source peak current, ranging from COM to VDD.
4 VDD power_in Driver bias supply, absolute maximum 30 V and recommended 14.5 V to 26 V for the 12 V UVLO option (8.5 V to 26 V for the 8 V UVLO option).
5 EN/FLT bidirectional Enable input and fault report pin that needs an external pullup, is pulled low to report OCP, UVLO and over temperature faults, and disables the driver when pulled low (0 V to 26 V recommended).
6 IN input Input of the driver, DC voltage from -2 V to 26 V recommended (-5 V to 30 V absolute maximum).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOT-23-6
Category
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VDD positive power supply VDD -0.3 30 V with respect to COM 4
Voltage at current sense pin VOCP -10 12 V 4
IN signal DC voltage VIN -5 30 V 4
EN/FLT signal DC voltage VEN/FLT -0.3 30 V 4
Junction temperature TJ -40 150 ℃ 4
Storage temperature Tstg -65 150 ℃ 4
ESD HBM V(ESD) -2000 2000 V Human body model, ANSI/ESDA/JEDEC JS-001 4
ESD CDM V(ESD) -1000 1000 V Charged device model, JESD22-C101 4
Voltage at current sense pin VOCP -5 10 V 4
IN signal DC voltage VIN -2 26 V 4
EN signal DC voltage VEN/FLT 0 26 V 4
Junction temperature TJ -40 150 ℃ 4
VDD static supply current IVDD 0.7 1.5 mA VIN = 3.3 V, EN = 5 V 5
VDD static supply current IVDD 0.7 1.1 mA VIN = 0 V, EN = 5 V 5
VDD disable current IDIS 0.8 1.1 mA VIN = 3.3 V, EN = 0 V 5
Input High Threshold Voltage VINH 1.8 2.2 2.6 V 5
Input Low Threshold Voltage VINL 0.8 1.2 1.6 V 5
Enable High Threshold Voltage VENH 1.8 2.2 2.6 V 5
Enable Low Threshold Voltage VENL 0.8 1.2 1.6 V 5
OC release threshold VOCTL -271 -238 -206 mV referenced to GND, -250 mV option 5
OC detection threshold VOCTH -265 -250 -235 mV referenced to GND, -250 mV option 5
Output Rise Time tR 8 18 ns CL=1.8 nF, 10% to 90%, Vin = 0 to 3.3 V 6
Output Fall Time tF 14 32 ns CL=1.8 nF, 90% to 10%, Vin = 0 to 3.3 V 6
Propagation Delay, Input falling to output falling tD2 28 50 ns CL=1.8 nF, from 1 V falling on Vin to 90% of output fall, Vin=0 - 3.3 V, Fsw=500 kHz, 50% duty cycle 6
Propagation Delay, Input rising to output rising tD1 26 50 ns CL=1.8 nF, from 2 V rising on Vin to 10% of output rise, Vin=0 - 3.3 V, Fsw=500 kHz, 50% duty cycle 6
DIS Response Delay tPD_DIS 27 45 ns CL=1.8 nF, from 1 V falling on EN to 90% of output fall, EN=0 - 3.3 V 6
Pulse Width Distortion tPWD -10 10 ns Input Pulse Width = 100 ns, 500 kHz, /tD2_1, tD1_1/ 6
Junction-to-ambient thermal resistance RθJA 158.2 °C/W DBV, 6 pins 4
Junction-to-case (top) thermal resistance RθJC(top) 78.7 °C/W DBV, 6 pins 4
Junction-to-board thermal resistance RθJB 42.7 °C/W DBV, 6 pins 4
Junction-to-top characterization parameter ΨJT 18.8 °C/W DBV, 6 pins 4
Junction-to-board characterization parameter ΨJB 42.4 °C/W DBV, 6 pins 4
VDD dynamic operating current IVDDO 30 mA fSW = 1MHz, EN = 5 V, VDD=15 V, CL=1.8 nF 5
Input-threshold Hysteresis VIN_HYS 1 V 5
IN Pin Pull Down Resistance RIND 115 kΩ 5
Enable Threshold Hysteresis VEN_HYS 1 V 5
EN Pin Pull Up Resistance RENU 2 MΩ 5
FLT threshold IFLTth 18 mA VFLT-sink = 400 mV, Tj=25 °C 5
Overtemperature threshold TSD 180 ℃ 6
Overtemperature protection hysteresis THYS 30 ℃ 6
Propagation delay from overtemperature shutdown to FLT tOTP2FLT 8 us Over temperature shutdown to 90% of FLT, Cl=10 pF 6
Peak Output Source Current ISRCPK -3 A CVDD = 10 µF, CL = 0.1 µF, f = 1 kHz 6
Peak Output Sink Current ISNKPK 3 A CVDD = 10 µF, CL = 0.1 µF, f = 1 kHz 6
Pull up resistance ROH 5 Ω IOUT = -500 mA 6
Pull down resistance ROL 1 Ω IOUT = 50 mA 6

CAD (KiCad official)

  • Symbol: UCC57142ADBVR
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: ucc57142adbvr-etched.step / ucc57142adbvr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ucc57142adbvr.step / ucc57142adbvr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (31 pp, sha256 9ac232958403d1dd, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF