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UCC28061QDRQ1

Texas Instruments · AC-DC Controllers & Regulators · SOIC-16

UCC28061QDRQ1 from Texas Instruments, in a SOIC-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ZCDB input Zero current detection input for phase B, clamped at 0 V and 3 V, expects a negative edge (falling threshold ~1 V, rising ~1.7 V) via a series resistor limiting clamp current to less than ±3 mA.
2 VSENSE input Output DC voltage sense input from a divider across the converter output with 6 V error amplifier reference; pulling it low disables the outputs, and open-loop protection pulls it low if disconnected.
3 TSET input PWM on-time programming input; a resistor to AGND sets on-time versus COMP voltage and the minimum period at the gate drive outputs.
4 PHB input Phase B enable input that turns channel B on/off (doubling channel A on-time when disabled); connect to COMP for automatic phase management or to VREF to disable it.
5 COMP output Transconductance error amplifier output (high-impedance current source) for loop compensation to AGND; on-time is proportional to COMP minus ~125 mV and COMP is pulled low during soft-start events.
6 AGND power_in Analog ground for signal bypass capacitors, compensation components and analog returns, connected to power ground at a single point.
7 VINAC input Input AC voltage sense from a divider across the rectified mains; below the brownout threshold longer than the filter time both drives are disabled (recommended input range 0 to 6 V).
8 HVSEN input High voltage output sense for redundant fail-safe overvoltage protection and power-good enable of a downstream converter; must never fall below 0.8 V during operation.
9 PWMCNTL output Open-drain PWM enable output that goes low when HVSEN is in the good region and ZCDA/ZCDB are switching correctly, otherwise high impedance.
10 CS input Current sense input that goes negative with input current; cycle-by-cycle overcurrent turns off both gate drives at about -200 mV and releases at about -15 mV.
11 GDB output Channel B gate drive output to the power FET gate, with an optional 5-10 Ω series resistor to reduce ringing.
12 VCC power_in Bias supply input of 14 V to 21 V, bypassed with 0.1 µF to PGND, and must deliver 6 mA dc plus gate charging current.
13 PGND power_in Power ground for the integrated circuit, connected to AGND through a separate short trace to isolate gate driver noise.
14 GDA output Channel A gate drive output to the power FET gate, with an optional 5-10 Ω series resistor to reduce ringing.
15 VREF power_out 6 V reference output bypassed with 0.1 µF to AGND that can bias circuits needing less than 2 mA total and turns off during VCC undervoltage and VSENSE disable.
16 ZCDA input Zero current detection input for phase A, clamped at 0 V and 3 V, expects a negative edge (falling threshold ~1 V, rising ~1.7 V) via a series resistor limiting clamp current to less than ±3 mA.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOIC-16
Category Power Supply Chip
Pins 16

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VCC input voltage VCC -0.5 21 V wrt GND 3
PWMCNTL input voltage PWMCNTL -0.5 20 V 3
COMP, CS, PHB, HVSEN, VINAC, VSENSE input voltage -0.5 7 V 3
ZCDA, ZCDB input voltage -0.5 4 V 3
VCC continuous input current 20 mA 3
PWMCNTL input current 10 mA 3
ZCDA, ZCDB, VSENSE input current -5 5 mA 3
VREF output current -10 mA 3
Continuous gate current GDA, GDB -25 25 mA 3
Operating junction temperature TJ -40 125 °C 3
Storage temperature Tstg -65 150 °C 3
Lead temperature TSOL 260 °C Soldering, 10s 3
ESD HBM 2000 V AEC-Q100 Classification Level H2 3
ESD CDM 750 V AEC-Q100 Classification Level C3B 3
Junction-to-ambient thermal resistance θJA 91.6 °C/W D (16 pin) 3
Junction-to-case (top) thermal resistance θJCtop 52.1 °C/W D (16 pin) 3
Junction-to-board thermal resistance θJB 48.6 °C/W D (16 pin) 3
Junction-to-top characterization parameter ψJT 14.9 °C/W D (16 pin) 3
Junction-to-board characterization parameter ψJB 48.3 °C/W D (16 pin) 3
VCC input voltage from low-impedance source VCC 14 21 V 3
VCC input current from high-impedance source 8 18 mA 3
VREF load current 0 -2 mA 3
VINAC input voltage 0 6 V 3
ZCDA, ZCDB series resistor 20 80 kΩ 3
TSET resistor to program PWM on-time RTSET 66.5 400 kΩ 3
HVSEN input voltage 0.8 4.5 V 4
PWMCNTL pull-up resistor to VREF 1 10 kΩ 4
VCC shunt voltage VCC(shunt) 22 24 26 V IVCC = 10 mA 4
VCC current, disabled IVCC(stby) 100 200 µA VSENSE = 0 V 4
VCC current, enabled IVCC(on) 5 8 mA VSENSE = 6 V 4
VCC turn-on threshold VCC(on) 11.5 12.6 13.5 V 4
VCC turn-off threshold VCC(off) 9.5 10.35 11.5 V 4
UVLO hysteresis 1.85 2.25 2.65 V 4
VREF output voltage, no load VREF 5.82 6 6.18 V IVREF = 0 mA 4
VREF change with load 1 6 mV 0 mA ≤ IVREF ≤ -2 mA 4
VREF change with VCC 1 10 mV 12 V ≤ VCC ≤ 20 V 4
VSENSE input regulation voltage 5.85 6 6.15 V TA = +25°C 4
VSENSE input regulation voltage 5.82 6 6.18 V 4
VSENSE input bias current 125 300 800 nA In regulation 4
COMP high voltage, clamped 4.7 4.95 5.1 V VSENSE = 5.8 V 4
COMP low voltage, saturated 0.03 0.125 V VSENSE = 6.2 V 4
VSENSE to COMP transconductance gm 75 96 110 µS COMP = 3 V, 5.94 V < VSENSE < 6.06 V 4
COMP source current, overdriven -120 -160 -190 µA VSENSE = 5 V, COMP = 3 V 4
COMP sink current 7 20 32 µA VSENSE = 6.2 V, COMP = 3 V 4
VSENSE threshold for COMP offset enable, down 135 185 235 mV Voltage below VREF 4
VSENSE over-voltage threshold, rising VOVP 6.25 6.45 6.7 V 4
VSENSE over-voltage hysteresis 0.1 0.2 0.4 V 4
VSENSE enable threshold, rising 1.15 1.25 1.35 V 4
VSENSE enable hysteresis 0.02 0.05 0.2 V 4
HVSEN threshold to PWMCNTL VPWMCNTL 2.35 2.5 2.65 V HVSEN rising 4
HVSEN input bias current, high -0.5 0.5 µA HVSEN = 3 V 4
HVSEN input bias current, low 28 36 41 µA HVSEN = 2 V 4
HVSEN rising threshold to over-voltage fault 4.64 4.87 5.1 V 4
HVSEN falling threshold to over-voltage fault 4.45 4.67 4.8 V 4
Phase Fail filter time to PWMCNTL high 8 12 20 ms PHB = 5 V, ZCDA switching, ZCDB = 0.5 V 4
PWMCNTL leakage current high -1 1 µA HVSEN = 2 V, PWMCNTL = 15 V 4
PWMCNTL output voltage low 0.2 0.5 V HVSENS = 3 V, IPWMCNTL = 5 mA 4
GDA, GDB output voltage high 11.5 13 15 V IGDA, IGDB = -100 mA 5
GDA, GDB output voltage high, clamped 12 13.5 15 V VCC = 20 V, IGDA, IGDB = -5 mA 5
GDA, GDB output voltage high, low VCC 10 10.5 11.5 V VCC = 12 V, IGDA, IGDB = -5 mA 5
GDA, GDB on-resistance high 8 14 Ω IGDA, IGDB = -100 mA 5
GDA, GDB output voltage low 0.15 0.3 V IGDA, IGDB = 100 mA 5
GDA, GDB on-resistance low 2 3 Ω IGDA, IGDB = 100 mA 5
Gate drive rise time 18 30 ns 1 V to 9 V, CLOAD = 1 nF 5
Gate drive fall time 12 25 ns 9 V to 1 V, CLOAD = 1 nF 5
GDA, GDB output voltage UV 1.6 2 V IGDA, IGDB = 2.5 mA 5
ZCDA, ZCDB voltage threshold, falling 0.8 1 1.2 V 5
ZCDA, ZCDB voltage threshold, rising 1.5 1.68 1.88 V 5
ZCDA, ZCDB clamp, high 2.6 3 3.4 V IZCDA = +2 mA, IZCDB = +2 mA 5
ZCDA, ZCDB input bias current -0.5 0.5 µA ZCDA = 1.4 V, ZCDB = 1.4 V 5
ZCDA, ZCDB clamp, low -0.4 -0.2 0 V IZCDA = -2 mA, IZCDB = -2 mA 5
ZCDA, ZCDB delay to GDA, GDB outputs 45 100 ns Respective gate drive output rising 10% from zero crossing input falling to 1 V 5
CS input bias current -150 -250 µA At rising threshold 5

CAD (KiCad official)

  • Symbol: UCC28061QDRQ1
  • Footprint: Package_SO:SOIC-16_3.9x9.9mm_P1.27mm
  • 3D model: SOIC-16 (KiCad packages3D, STEP)
  • 3D model files: ucc28061qdrq1-etched.step / ucc28061qdrq1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ucc28061qdrq1.step / ucc28061qdrq1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (33 pp, sha256 0916ffb443732489, retrieved 2026-10-23, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF