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UCC27201AQDDARQ1

Texas Instruments · Gate Drivers · SO-8

UCC27201AQDDARQ1 from Texas Instruments, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD power_in Positive supply to the lower gate driver, to be decoupled to VSS (GND) with a typical capacitor range of 0.22μF to 1.0μF.
2 HB power_in High-side bootstrap supply, with an on-chip bootstrap diode and an external bootstrap capacitor whose typical HB bypass range is 0.022μF to 0.1μF, dependent on the high-side MOSFET gate charge.
3 HO output High-side gate driver output, connected to the gate of the high-side power MOSFET.
4 HS power_in High-side source connection, tied to the high-side MOSFET source and the negative side of the bootstrap capacitor, with an absolute maximum of -18V for repetitive pulses under 100 ns.
5 HI input High-side input that controls the HO output, with TTL-compatible thresholds.
6 LI input Low-side input that controls the LO output, with TTL-compatible thresholds.
7 VSS power_in Negative supply terminal for the device, which is generally grounded.
8 LO output Low-side gate driver output, connected to the gate of the low-side power MOSFET.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SO-8
Category Motor Driver ICs
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VDD supply voltage VDD -0.3 20 V 4
Input voltages on HI and LI VHI, VLI -0.3 20 V 4
Voltage on HS DC VHS -1 120 V DC 4
Voltage on HS repetitive pulse VHS -18 120 V Repetitive pulse < 100 ns 4
Voltage on HB VHB -0.3 120 V 4
Voltage on HB-HS VHB-VHS -0.3 20 V 4
Output voltage on LO VLO -2 V Repetitive pulse < 100 ns; printed upper limit VDD + 0.3 V 4
Operating junction temperature TJ -40 150 °C 4
Storage temperature Tstg -65 150 °C 4
VDD supply voltage VDD 8 12 17 V 4
Voltage on HS VHS -1 105 V 4
Voltage on HS repetitive pulse VHS -15 110 V Repetitive pulse < 100 ns 4
Operating junction temperature TJ -40 150 °C 4
VDD quiescent current IDD 0.11 0.8 mA VLI = VHI = 0 V 5
VDD operating current IDDO 1 3 mA f = 500 kHz, CLOAD = 0 5
Boot voltage quiescent current IHB 0.065 0.8 mA VLI = VHI = 0 V 5
Boot voltage operating current IHBO 0.9 3 mA f = 500 kHz, CLOAD = 0 5
HB to VSS quiescent current IHBS 0.0005 1 μA VHS = VHB = 105 V 5
Input voltage high threshold VHIT 1.9 2.3 2.7 V 5
Input voltage low threshold VLIT 1.3 1.6 1.9 V 5
Input pulldown resistance RIN 68 kΩ VIN = 3V 5
VDD rising threshold VDDR 6.2 7.1 7.8 V 5
VHB rising threshold VHBR 5.8 6.7 7.2 V 5
Low-current forward voltage VF 0.65 0.85 V IVDD - HB = 100 μA 5
High-current forward voltage VFI 0.85 1.1 V IVDD - HB = 100 mA 5
Dynamic resistance, ΔVF/ΔI RD 0.65 1 Ω IVDD - HB = 120 mA and 100 mA 5
LO low level output voltage VLOL 0.1 0.4 V ILO = 100 mA 5
LO high level output voltage VLOH 0.13 0.42 V ILO = -100 mA, VLOH = VDD, VLO 5
HO low level output voltage VHOL 0.1 0.4 V IHO = 100 mA 5
HO high level output voltage VHOH 0.13 0.42 V IHO = -100 mA, VHOH = VHB- VHO 5
LO propagation delay, VLI falling to VLO falling tDLFF 22 50 ns CLOAD = 0 pF, from VLIT of LI to 90% of LO falling 5
HO propagation delay, VHI falling to VHO falling tDHFF 22 50 ns CLOAD = 0 pF, from VIT of HI to 90% of HO falling 6
LO propagation delay, VLI rising to VLO rising tDLRR 22 50 ns CLOAD = 0 pF, from VHIT of LI to 10% of LO rising 6
HO propagation delay, VHI rising to VHO rising tDHRR 22 50 ns CLOAD = 0 pF, from VHIT of HI to 10% of HO rising 6
Delay matching, LI ON, HI OFF tMON 1 7 ns 6
Delay matching, LI OFF, HI ON tMOFF 1 7 ns 6
LO rise time (3 V to 9 V) tR_LO_p1 0.26 0.6 μs CLOAD = 0.1 μF, (3V to 9V) 6
HO rise time (3 V to 9 V) tR_HO_p1 0.26 0.6 μs CLOAD = 0.1 μF, (3V to 9V) 6
LO fall time (9 V to 3 V) tF_LO_p1 0.22 0.6 μs CLOAD = 0.1 μF, (9V to 3V) 6
HO fall time (9 V to 3 V) tF_HO_p1 0.22 0.6 μs CLOAD = 0.1 μF, (9V to 3V) 6
Junction-to-ambient thermal resistance RθJA 44.8 °C/W 4
Junction-to-case (top) thermal resistance RθJC(top) 68.5 °C/W 4
Junction-to-board thermal resistance RθJB 20 °C/W 4
Junction-to-top characterization parameter ψJT 6.9 °C/W 4
Junction-to-board characterization parameter ψJB 20 °C/W 4
Junction-to-case (bottom) thermal resistance RθJC(bot) 8.4 °C/W 5

CAD (KiCad official)

  • Symbol: UCC27201AQDDARQ1
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: ucc27201aqddarq1-etched.step / ucc27201aqddarq1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ucc27201aqddarq1.step / ucc27201aqddarq1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (33 pp, sha256 b909b640963f85b2, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF