component
UCC27200DR
Public Made by Adomby adom
Texas Instruments Gate Drivers, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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UCC27200DR
Texas Instruments · Gate Drivers · SOIC-8
UCC27200DR from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD | power_in | Positive supply to the lower gate driver; decouple to VSS (GND) with a typical capacitor range of 0.22μF to 1μF. |
| 2 | HB | power_in | High-side bootstrap supply; the bootstrap diode is on-chip but an external bootstrap capacitor is required, typically 0.022μF to 0.1μF depending on the high-side MOSFET gate charge. |
| 3 | HO | output | High-side output that connects to the gate of the high-side power MOSFET. |
| 4 | HS | passive | High-side source connection that connects to the source of the high-side power MOSFET and to the negative side of the bootstrap capacitor. |
| 5 | HI | input | High-side input that controls the high-side driver. |
| 6 | LI | input | Low-side input that controls the low-side driver. |
| 7 | VSS | power_in | Negative supply terminal for the device, generally grounded and used as the reference for all voltages. |
| 8 | LO | output | Low-side output that connects to the gate of the low-side power MOSFET. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-8 |
| Category | Motor Driver ICs |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VDD Supply voltage | VDD | -0.3 | 20 | V | 4 | ||
| Input voltages on HI and LI | VHI, VLI | -0.3 | 20 | V | 4 | ||
| Output voltage on LO | VLO | -0.3 | V | DC; maximum printed as VDD + 0.3 | 4 | ||
| Output voltage on LO | VLO | -2 | V | Repetitive pulse < 100 ns; maximum printed as VDD + 0.3 | 4 | ||
| Voltage on HS | VHS | -1 | 120 | V | DC | 4 | |
| Voltage on HS | VHS | -5 | 120 | V | Repetitive pulse < 100 ns | 4 | |
| Voltage on HB | VHB | -0.3 | 120 | V | 4 | ||
| Voltage on HB-HS | VHB-HS | -0.3 | 20 | V | 4 | ||
| Operating junction temperature | TJ | -40 | 150 | °C | 4 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 4 | ||
| VDD Supply voltage | VDD | 8 | 12 | 17 | V | 4 | |
| Voltage on HS | VHS | -1 | 105 | V | 4 | ||
| Voltage on HS (repetitive pulse) | VHS | -5 | 110 | V | repetitive pulse < 100 ns | 4 | |
| Voltage on HB | VHB | 115 | V | minimum printed as VHS + 8.0 | 4 | ||
| Operating junction temperature | TJ | -40 | 150 | °C | 4 | ||
| IDD VDD quiescent current | IDD | 0.11 | 0.8 | mA | VLI = VHI = 0 V | 5 | |
| IDDO VDD operating current | IDDO | 1 | 3 | mA | f = 500 kHz, CLOAD = 0 | 5 | |
| IHB Boot voltage quiescent current | IHB | 0.065 | 0.8 | mA | VLI = VHI = 0 V | 5 | |
| IHBO Boot voltage operating current | IHBO | 0.9 | 3 | mA | f = 500 kHz, CLOAD = 0 | 5 | |
| IHBS HB to VSS quiescent current | IHBS | 0.0005 | 1 | μA | VHS = VHB = 105 V | 5 | |
| Input voltage high threshold (UCC27200) | VHIT | 6 | 8 | V | 5 | ||
| Input voltage low threshold (UCC27200) | VLIT | 3 | 5.6 | V | 5 | ||
| Input pulldown resistance (UCC27200) | RIN | 100 | 200 | 350 | kΩ | VIN = 3V | 5 |
| VDD rising threshold | VDDR | 6.2 | 7.1 | 7.8 | V | 5 | |
| VHB rising threshold | VHBR | 5.8 | 6.7 | 7.2 | V | 5 | |
| Low-current forward voltage | VF | 0.65 | 0.85 | V | I VDD - HB = 100 μA | 5 | |
| High-current forward voltage | VFI | 0.85 | 1.1 | V | I VDD - HB = 100 mA | 5 | |
| Dynamic resistance ΔVF/ΔI | RD | 0.65 | 1 | Ω | I VDD - HB = 120 mA and 100 mA | 5 | |
| LO Low level output voltage | VLOL | 0.1 | 0.4 | V | ILO = 100 mA | 5 | |
| LO High level output voltage | VLOH | 0.13 | 0.42 | V | ILO = -100 mA, VLOH = VDD, VLO | 5 | |
| HO Low level output voltage | VHOL | 0.1 | 0.4 | V | IHO = 100 mA | 5 | |
| HO High level output voltage | VHOH | 0.13 | 0.42 | V | IHO = -100 mA, VHOH = VHB- VHO | 5 | |
| tDLFF VLI falling to VLO falling | tDLFF | 22 | 50 | ns | CLOAD = 0 pF, from VLIT of LI to 90% of LO falling | 6 | |
| tDHFF VHI falling to VHO falling | tDHFF | 22 | 50 | ns | CLOAD = 0 pF, from VIT of HI to 90% of HO falling | 6 | |
| tDLRR VLI rising to VLO rising | tDLRR | 22 | 50 | ns | CLOAD = 0 pF, from VHIT of LI to 10% of LO rising | 6 | |
| tDHRR VHI rising to VHO rising | tDHRR | 22 | 50 | ns | CLOAD = 0 pF, from VHIT of HI to 10% of HO rising | 6 | |
| Delay matching LI ON, HI OFF | tMON | 1 | 7 | ns | LI ON, HI OFF | 6 | |
| Delay matching LI OFF, HI ON | tMOFF | 1 | 7 | ns | LI OFF, HI ON | 6 | |
| LO rise time (3 V to 9 V) | tR_LO_p1 | 0.26 | 0.6 | μs | CLOAD = 0.1 μF, (3V to 9V) | 6 | |
| HO rise time (3 V to 9 V) | tR_HO_p1 | 0.26 | 0.6 | μs | CLOAD = 0.1 μF, (3V to 9V) | 6 | |
| LO fall time (9 V to 3 V) | tF_LO_p1 | 0.22 | 0.6 | μs | CLOAD = 0.1 μF, (9V to 3V) | 6 | |
| HO fall time (9 V to 3 V) | tF_HO_p1 | 0.22 | 0.6 | μs | CLOAD = 0.1 μF, (9V to 3V) | 6 | |
| Junction-to-ambient thermal resistance (D SOIC) | RθJA | 112.5 | °C/W | 4 | |||
| Junction-to-case (top) thermal resistance (D SOIC) | RθJC(top) | 52.1 | °C/W | 4 | |||
| Junction-to-board thermal resistance (D SOIC) | RθJB | 59.6 | °C/W | 4 | |||
| Junction-to-top characterization parameter (D SOIC) | ψJT | 7 | °C/W | 4 | |||
| Junction-to-board characterization parameter (D SOIC) | ψJB | 58.7 | °C/W | 4 |
CAD (KiCad official)
- Symbol:
UCC27200DR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
ucc27200dr-etched.step/ucc27200dr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ucc27200dr.step/ucc27200dr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (44 pp, sha256
c05707c37ae48a8a, retrieved 2026-11-05, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# UCC27200DR
**Texas Instruments** · Gate Drivers · SOIC-8
UCC27200DR from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD | power_in | Positive supply to the lower gate driver; decouple to VSS (GND) with a typical capacitor range of 0.22μF to 1μF. |
| 2 | HB | power_in | High-side bootstrap supply; the bootstrap diode is on-chip but an external bootstrap capacitor is required, typically 0.022μF to 0.1μF depending on the high-side MOSFET gate charge. |
| 3 | HO | output | High-side output that connects to the gate of the high-side power MOSFET. |
| 4 | HS | passive | High-side source connection that connects to the source of the high-side power MOSFET and to the negative side of the bootstrap capacitor. |
| 5 | HI | input | High-side input that controls the high-side driver. |
| 6 | LI | input | Low-side input that controls the low-side driver. |
| 7 | VSS | power_in | Negative supply terminal for the device, generally grounded and used as the reference for all voltages. |
| 8 | LO | output | Low-side output that connects to the gate of the low-side power MOSFET. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-8 |
| Category | Motor Driver ICs |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VDD Supply voltage | VDD | -0.3 | | 20 | V | | 4 |
| Input voltages on HI and LI | VHI, VLI | -0.3 | | 20 | V | | 4 |
| Output voltage on LO | VLO | -0.3 | | | V | DC; maximum printed as VDD + 0.3 | 4 |
| Output voltage on LO | VLO | -2 | | | V | Repetitive pulse < 100 ns; maximum printed as VDD + 0.3 | 4 |
| Voltage on HS | VHS | -1 | | 120 | V | DC | 4 |
| Voltage on HS | VHS | -5 | | 120 | V | Repetitive pulse < 100 ns | 4 |
| Voltage on HB | VHB | -0.3 | | 120 | V | | 4 |
| Voltage on HB-HS | VHB-HS | -0.3 | | 20 | V | | 4 |
| Operating junction temperature | TJ | -40 | | 150 | °C | | 4 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 4 |
| VDD Supply voltage | VDD | 8 | 12 | 17 | V | | 4 |
| Voltage on HS | VHS | -1 | | 105 | V | | 4 |
| Voltage on HS (repetitive pulse) | VHS | -5 | | 110 | V | repetitive pulse < 100 ns | 4 |
| Voltage on HB | VHB | | | 115 | V | minimum printed as VHS + 8.0 | 4 |
| Operating junction temperature | TJ | -40 | | 150 | °C | | 4 |
| IDD VDD quiescent current | IDD | | 0.11 | 0.8 | mA | VLI = VHI = 0 V | 5 |
| IDDO VDD operating current | IDDO | | 1 | 3 | mA | f = 500 kHz, CLOAD = 0 | 5 |
| IHB Boot voltage quiescent current | IHB | | 0.065 | 0.8 | mA | VLI = VHI = 0 V | 5 |
| IHBO Boot voltage operating current | IHBO | | 0.9 | 3 | mA | f = 500 kHz, CLOAD = 0 | 5 |
| IHBS HB to VSS quiescent current | IHBS | | 0.0005 | 1 | μA | VHS = VHB = 105 V | 5 |
| Input voltage high threshold (UCC27200) | VHIT | | 6 | 8 | V | | 5 |
| Input voltage low threshold (UCC27200) | VLIT | 3 | 5.6 | | V | | 5 |
| Input pulldown resistance (UCC27200) | RIN | 100 | 200 | 350 | kΩ | VIN = 3V | 5 |
| VDD rising threshold | VDDR | 6.2 | 7.1 | 7.8 | V | | 5 |
| VHB rising threshold | VHBR | 5.8 | 6.7 | 7.2 | V | | 5 |
| Low-current forward voltage | VF | | 0.65 | 0.85 | V | I VDD - HB = 100 μA | 5 |
| High-current forward voltage | VFI | | 0.85 | 1.1 | V | I VDD - HB = 100 mA | 5 |
| Dynamic resistance ΔVF/ΔI | RD | | 0.65 | 1 | Ω | I VDD - HB = 120 mA and 100 mA | 5 |
| LO Low level output voltage | VLOL | | 0.1 | 0.4 | V | ILO = 100 mA | 5 |
| LO High level output voltage | VLOH | | 0.13 | 0.42 | V | ILO = -100 mA, VLOH = VDD, VLO | 5 |
| HO Low level output voltage | VHOL | | 0.1 | 0.4 | V | IHO = 100 mA | 5 |
| HO High level output voltage | VHOH | | 0.13 | 0.42 | V | IHO = -100 mA, VHOH = VHB- VHO | 5 |
| tDLFF VLI falling to VLO falling | tDLFF | | 22 | 50 | ns | CLOAD = 0 pF, from VLIT of LI to 90% of LO falling | 6 |
| tDHFF VHI falling to VHO falling | tDHFF | | 22 | 50 | ns | CLOAD = 0 pF, from VIT of HI to 90% of HO falling | 6 |
| tDLRR VLI rising to VLO rising | tDLRR | | 22 | 50 | ns | CLOAD = 0 pF, from VHIT of LI to 10% of LO rising | 6 |
| tDHRR VHI rising to VHO rising | tDHRR | | 22 | 50 | ns | CLOAD = 0 pF, from VHIT of HI to 10% of HO rising | 6 |
| Delay matching LI ON, HI OFF | tMON | | 1 | 7 | ns | LI ON, HI OFF | 6 |
| Delay matching LI OFF, HI ON | tMOFF | | 1 | 7 | ns | LI OFF, HI ON | 6 |
| LO rise time (3 V to 9 V) | tR_LO_p1 | | 0.26 | 0.6 | μs | CLOAD = 0.1 μF, (3V to 9V) | 6 |
| HO rise time (3 V to 9 V) | tR_HO_p1 | | 0.26 | 0.6 | μs | CLOAD = 0.1 μF, (3V to 9V) | 6 |
| LO fall time (9 V to 3 V) | tF_LO_p1 | | 0.22 | 0.6 | μs | CLOAD = 0.1 μF, (9V to 3V) | 6 |
| HO fall time (9 V to 3 V) | tF_HO_p1 | | 0.22 | 0.6 | μs | CLOAD = 0.1 μF, (9V to 3V) | 6 |
| Junction-to-ambient thermal resistance (D SOIC) | RθJA | | 112.5 | | °C/W | | 4 |
| Junction-to-case (top) thermal resistance (D SOIC) | RθJC(top) | | 52.1 | | °C/W | | 4 |
| Junction-to-board thermal resistance (D SOIC) | RθJB | | 59.6 | | °C/W | | 4 |
| Junction-to-top characterization parameter (D SOIC) | ψJT | | 7 | | °C/W | | 4 |
| Junction-to-board characterization parameter (D SOIC) | ψJB | | 58.7 | | °C/W | | 4 |
## CAD (KiCad official)
- Symbol: `UCC27200DR`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `ucc27200dr-etched.step` / `ucc27200dr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ucc27200dr.step` / `ucc27200dr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/ucc27200.pdf) (44 pp, sha256 `c05707c37ae48a8a`, retrieved 2026-11-05, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ucc27200dr-datasheet.pdf)