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UCC24612-2DBVT
Public Made by Adomby adom
Texas Instruments Monitors & Reset Circuits, SOT-23-5. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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UCC24612-2DBVT
Texas Instruments · Monitors & Reset Circuits · SOT-23-5
UCC24612-2DBVT from Texas Instruments, in a SOT-23-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VG | output | Gate drive output for the controlled MOSFET, connected through a small series resistor; >1-A peak source and >4-A peak sink current, and avoid a resistor below 50 kΩ between VG and VS. |
| 2 | VS | power_in | Internal ground reference of the device, also used to sense the voltage drop across the SR MOSFET; avoid sharing its trace with the power path. |
| 3 | REG | power_out | Device bias pin from an internal linear regulator from VDD generating a regulated 9.5 V, with a recommended 2.2-µF bypass capacitor to VS (absolute maximum 12 V). |
| 4 | VDD | power_in | Internal linear regulator input, connected to the output voltage in low-side SR configuration or to an R-C-D bias circuit from the SR MOSFET drain in high-side configuration (absolute maximum 30 V). |
| 5 | VD | input | MOSFET drain voltage sensing input connected to the SR MOSFET drain pin, with an absolute maximum of 230 V and a layout that avoids sharing its trace with the power path. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOT-23-5 |
| Category | Power Supply Chip |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VDD input voltage | VDD | -0.3 | 30 | V | 3 | ||
| VD input voltage | VD | -0.7 | 230 | V | 3 | ||
| VG input voltage | VG | -0.3 | V | max is VREG | 3 | ||
| VD input voltage for IVD ≤ -10 mA | VD | -1 | 230 | V | IVD ≤ -10 mA | 3 | |
| REG input voltage | REG | 12 | V | 3 | |||
| Peak VG output current | -4 | 4 | A | pulsed, tPULSE ≤ 4 ms, duty cycle ≤ 1% | 3 | ||
| Operating junction temperature | TJ | -40 | 125 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| VDD input voltage | VVDD | 4 | 28 | V | 5 | ||
| VDD bypass capacitor | CVDD | 1 | µF | 5 | |||
| REG bypass capacitor | CREG | 1.5 | 2.2 | µF | 5 | ||
| Junction temperature | TJ | -40 | 125 | °C | 5 | ||
| Maximum switching frequency UCC24612-2 | fS_MAX | 625 | 800 | kHz | UCC24612-2 | 5 | |
| VDD current, REG undervoltage | IVDDSTART | 50 | 105 | 150 | μA | VDD = 4 V, VD = 0 V | 6 |
| VDD current, run | IVDDRUN | 0.5 | 0.92 | 1.5 | mA | VDD = 12 V | 6 |
| VDD current, run | IVDDRUN | 0.5 | 0.9 | 1.5 | mA | VDD = 5 V | 6 |
| VDD current, standby mode | IVDDSTBY | 200 | 390 | 650 | μA | VDD = 12 V, VD = 1 V | 6 |
| VDD current, standby mode | IVDDSTBY | 200 | 320 | 500 | μA | VDD = 5 V, VD = 1 V | 6 |
| REG turn-on threshold | VREGON | 4.15 | 4.5 | 4.87 | V | Turn-on detected by IVDD rising | 6 |
| REG turn-off threshold | VREGOFF | 3.65 | 4 | 4.25 | V | Turn-off detected by IVDD falling | 6 |
| UVLO hysteresis | VREGHYST | 0.425 | 0.5 | 0.575 | V | VREGHYST = VREGON, VREGOFF | 6 |
| VG turn-on threshold | VTHVGON | -300 | -240 | -175 | mV | VD falling, TJ = 25°C | 6 |
| VG turn-off threshold | VTHVGOFF | -20 | -9 | -2 | mV | VD rising, TJ = 25°C | 6 |
| VG turn-off threshold | VTHVGOFF | -30 | -9 | -2 | mV | VD rising, -40°C ≤TJ ≤ 125°C | 6 |
| VG re-arming threshold | VTHARM | 0.4 | 0.5 | 0.6 | V | VD rising | 6 |
| VD pin bias current when VG is high | IVDBIAS_ON | -1 | 0 | 1 | µA | VVD = -50 mV, VVG = VGH | 6 |
| VD pin bias current when VG is low | IVDBIAS_OFF | -6 | -2 | µA | VVD = -150 mV, VVG = VGL, TJ = 25°C | 6 | |
| VD pin bias current when VG is low | IVDBIAS_OFF | -10 | µA | VVD = -150 mV, VVG = VGL, -40°C ≤TJ ≤ 125°C | 6 | ||
| VD pin leakage current | IVDLK | 0.06 | 2 | µA | VVD = 200 V | 6 | |
| VG pull-up resistance | RSOURCE | 5.7 | 10 | Ω | IVG = -20 mA | 6 | |
| VG pull-down resistance | RSINK | 0.45 | 1 | Ω | IVG = 100 mA | 6 | |
| VG clamp level | VGH | 8.55 | 9.4 | 10.26 | V | 6 | |
| VG output low voltage | VGL | 60 | 150 | mV | IVG = 100 mA, VDD = 12 V | 6 | |
| VG output low voltage in UVLO | VOLGUV | 0.7 | V | IVG = 25 mA, VDD = 4 V | 6 | ||
| REG pin regulation level | VREG | 8.55 | 9.4 | 10.26 | V | ILOAD_REG = 0 mA | 6 |
| Load regulation on REG | VREGLG | 0.016 | 0.1 | V | ILOAD_REG= 10 mA to 0 mA | 6 | |
| REG drop-out on pass-through mode | VREGDO | 0.28 | 0.45 | V | VDD = 5 V, ILOAD_REG= 10 mA | 6 | |
| REG short-circuit current | IREGSC | 1 | 5.2 | 15 | mA | VREG = 0 V | 6 |
| REG current limit | IREGLIM | 25 | 42 | 62 | mA | VREG = 8 V | 6 |
| Gate turn-on propagation delay | tdVGON | 120 | 170 | 225 | ns | VD transitions from 4.7 V to -0.3 V in 5 ns, UCC24612-2, TJ = 25°C | 7 |
| Gate turn-off propagation delay | tdVGOFF | 16 | 35 | ns | VD moves from -0.3 V to 4.7 V in 5 ns | 7 | |
| Minimum SR conduction time | tON(min) | 350 | 540 | 670 | ns | UCC24612 -2 | 7 |
| Absolute minimum SR off-time | tOFF_ABSMIN | 160 | 360 | 545 | ns | UCC24612-2 | 7 |
| Maximum SR off-blanking time | tOFF_MAX | 2.65 | 3.68 | 4.65 | µs | 7 | |
| VG rise time | tr_VG | 10 | 32 | 65 | ns | 10% to 90%, CVG = 6.8 nF | 7 |
| VG fall time | tf_VG | 5 | 16 | 35 | ns | 90% to 10%, CVG = 6.8 nF | 7 |
| Standby mode detection time | tSTBY_DET | 3 | 4.5 | 6 | ms | 7 | |
| Average frequency entering standby mode | fSLEEP | 8 | 12 | 16 | kHz | 7 | |
| Average frequency coming out of standby mode | fWAKE | 10 | 15 | 20 | kHz | 7 | |
| Average frequency hysteresis for standby mode | fSTB_HYS | 2 | 3 | 4 | kHz | 7 | |
| Thermal shut-down threshold | TTSD | 130 | 165 | ºC | min specified by design | 7 | |
| Thermal shut-down recovery hysteresis | THYS | 15 | ºC | 7 | |||
| ESD HBM, all pins except pin 5 | V(ESD) | -2000 | 2000 | V | HBM per ANSI/ESDA/JEDEC JS-001 | 4 | |
| ESD HBM, pin 5 | V(ESD) | -1500 | 1500 | V | HBM per ANSI/ESDA/JEDEC JS-001, pin 5 | 4 | |
| ESD CDM, all pins | V(ESD) | -500 | 500 | V | CDM per JESD22-C101 | 4 | |
| Junction-to-ambient thermal resistance | RθJA | 206.6 | °C/W | DBV (SOT23-5) | 5 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 97.6 | °C/W | DBV (SOT23-5) | 5 | ||
| Junction-to-board thermal resistance | RθJB | 44.2 | °C/W | DBV (SOT23-5) | 5 |
CAD (KiCad official)
- Symbol:
UCC24612-2DBVT - Footprint:
Package_TO_SOT_SMD:SOT-23-5 - 3D model: SOT-23-5 (KiCad packages3D, STEP)
- 3D model files:
ucc24612-2dbvt-etched.step/ucc24612-2dbvt-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ucc24612-2dbvt.step/ucc24612-2dbvt.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (38 pp, sha256
d5838705734af89c, retrieved 2026-10-24, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).