component
UAD8C05L01-HXY
Public Made by Adomby adom
HXY MOSFET Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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UAD8C05L01-HXY
HXY MOSFET · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
UAD8C05L01-HXY from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Bi-directional ESD protection terminal (interchangeable with pin 2), 5 V stand-off voltage, 0.35 pF capacitance, protects one line against IEC61000-4-2 ±15 kV air / ±10 kV contact discharge. |
| 2 | 2 | passive | Bi-directional ESD protection terminal (interchangeable with pin 1), connect between the protected line and ground/reference, 5 V stand-off voltage and 0.35 pF capacitance. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse working (stand-off) voltage | VRWM | 5 | V | 2 | |||
| Reverse leakage current | IR | 1 | A | @ VRWM | 2 | ||
| Breakdown voltage | VBR | 6.5 | V | @ IT = 1 mA | 2 | ||
| Capacitance | C | 0.35 | pF | 2 | |||
| Clamping voltage | VC | 9 | V | IPP = 1 A | 2 | ||
| Peak pulse power | PPP | 88 | W | tp = 8/20μs | 1 | ||
| Maximum lead soldering temperature | TL | 260 | °C | 10s | 1 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Operating temperature range | Top | -40 | 125 | °C | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| IEC61000-4-2 ESD air discharge | -10 | 10 | KV | air discharge | 1 | ||
| IEC61000-4-2 ESD contact discharge | -15 | 15 | KV | contact discharge | 1 |
CAD (KiCad official)
- Symbol:
UAD8C05L01-HXY - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
uad8c05l01-hxy-etched.step/uad8c05l01-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);uad8c05l01-hxy.step/uad8c05l01-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
a91525c1ac013569, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# UAD8C05L01-HXY
**HXY MOSFET** · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
UAD8C05L01-HXY from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Bi-directional ESD protection terminal (interchangeable with pin 2), 5 V stand-off voltage, 0.35 pF capacitance, protects one line against IEC61000-4-2 ±15 kV air / ±10 kV contact discharge. |
| 2 | 2 | passive | Bi-directional ESD protection terminal (interchangeable with pin 1), connect between the protected line and ground/reference, 5 V stand-off voltage and 0.35 pF capacitance. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse working (stand-off) voltage | VRWM | | | 5 | V | | 2 |
| Reverse leakage current | IR | | | 1 | A | @ VRWM | 2 |
| Breakdown voltage | VBR | 6.5 | | | V | @ IT = 1 mA | 2 |
| Capacitance | C | | | 0.35 | pF | | 2 |
| Clamping voltage | VC | | | 9 | V | IPP = 1 A | 2 |
| Peak pulse power | PPP | | | 88 | W | tp = 8/20μs | 1 |
| Maximum lead soldering temperature | TL | | | 260 | °C | 10s | 1 |
| Storage temperature range | Tstg | -55 | | 150 | °C | | 1 |
| Operating temperature range | Top | -40 | | 125 | °C | | 1 |
| Maximum junction temperature | Tj | | | 150 | °C | | 1 |
| IEC61000-4-2 ESD air discharge | | -10 | | 10 | KV | air discharge | 1 |
| IEC61000-4-2 ESD contact discharge | | -15 | | 15 | KV | contact discharge | 1 |
## CAD (KiCad official)
- Symbol: `UAD8C05L01-HXY`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `uad8c05l01-hxy-etched.step` / `uad8c05l01-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `uad8c05l01-hxy.step` / `uad8c05l01-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/uad8c05l01-hxy-datasheet.pdf) (5 pp, sha256 `a91525c1ac013569`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/uad8c05l01-hxy-datasheet.pdf)