# U3213E

**UNI SEMIC** · DC-DC Converters · ESOP-8

U3213E from UNI SEMIC, in a ESOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD | power_in | Chip supply pin that also serves as the output-voltage feedback input when FB is floating; a 0.1uF SMD capacitor is recommended, with VDD_ON typ 7.5 V, VDD undervoltage typ 4.5 V, VDD overvoltage protection typ 24 V and internal clamp typ 26 V at 10 mA. |
| 2 | GND | power_in | Chip reference ground. |
| 3 | FB | input | Feedback input; left floating it sets the default 14.3 V output, with VFB_REF typ 1.87 V, output overvoltage threshold typ 2.40 V and overload threshold typ 1.40 V. |
| 4 | CS | output | Peak current sense pin; the peak current threshold is typ 0.3 V, with abnormal overcurrent protection threshold typ 0.6 V and 350 ns leading-edge blanking. |
| 5 | Drain | power_in | Drain of the internal high-voltage MOSFET, rated for a breakdown voltage of typ 200 V and a Drain pin voltage range of -0.3 to 200 V. |
| 6 | Drain | power_in | Drain of the internal high-voltage MOSFET, rated for a breakdown voltage of typ 200 V and a Drain pin voltage range of -0.3 to 200 V. |
| 7 | Drain | power_in | Drain of the internal high-voltage MOSFET, rated for a breakdown voltage of typ 200 V and a Drain pin voltage range of -0.3 to 200 V. |
| 8 | GND | power_in | Chip reference ground. |
| 9 | Drain | power_in | Exposed-pad drain of the internal high-voltage MOSFET, which must be well soldered to the PCB (datasheet notes this exposed pad applies to the U3213E). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UNI SEMIC |
| Package | ESOP-8 |
| Category | Power Management (PMIC) |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain pin voltage |  | -0.3 |  | 200 | V |  | 5 |
| VDD supply voltage |  |  |  | 30 | V |  | 5 |
| VDD clamp current |  |  |  | 10 | mA |  | 5 |
| FB, CS pin voltage |  | -0.3 |  | 7 | V |  | 5 |
| Maximum junction temperature |  |  |  | 160 | °C |  | 5 |
| Storage temperature |  | -65 |  | 150 | °C |  | 5 |
| Pin temperature (soldering, 10 s) |  |  |  | 260 | °C |  | 5 |
| ESD capability (human body model) |  |  |  | 3 | KV |  | 5 |
| ESD capability (machine model) |  |  |  | 250 | V |  | 5 |
| Operating ambient temperature |  | -40 |  | 125 | °C |  | 5 |
| Thermal resistance, junction-to-ambient (ESOP-8) |  |  | 165 |  | °C/W |  | 5 |
| HV pin supply current | IHV | 1 | 5 |  | mA | HV=90V, VDD=0V | 5 |
| HV pin leakage current | IHV_leakage |  |  | 50 | uA | HV=90V, VDD=12V | 5 |
| VDD startup current | IVDD_st |  | 100 | 300 | uA | 无开关工作 | 5 |
| Internal differential amplifier reference (FB) | VFB_REF | 1.84 | 1.87 | 1.9 | V |  | 6 |
| VDD operating current | IVDD_Op |  | 800 |  | uA | Fsw=60kHz | 5 |
| VDD quiescent current | IVDD_Q |  | 200 |  | uA |  | 5 |
| VDD turn-on voltage | VDD_ON |  | 7.5 |  | V |  | 5 |
| VDD undervoltage lockout voltage | VDD_OFF |  | 4.5 |  | V |  | 5 |
| VDD regulation voltage | VDD_Reg1 |  | 14.3 |  | V | FB 悬空 | 5 |
| VDD overvoltage protection threshold | VDD_OVP |  | 24 |  | V |  | 5 |
| VDD clamp voltage | VDD_Clamp |  | 26 |  | V | IVDD=10mA | 5 |
| Output overvoltage protection (OVP) threshold on FB | VFB_OVP |  | 2.4 |  | V |  | 6 |
| Overload protection (OLP) threshold on FB | VFB_OLP |  | 1.4 |  | V |  | 6 |
| Overload protection delay time | TD_OLP |  | 100 |  | ms |  | 6 |
| Leading-edge blanking | TLEB |  | 350 |  | ns |  | 6 |
| Overcurrent comparator delay | TD_OCP |  | 100 |  | ns |  | 6 |
| Peak current threshold | VIPK |  | 0.3 |  | V |  | 6 |
| Abnormal overcurrent protection (AOCP) threshold | VAOCP |  | 0.6 |  | V |  | 6 |
| Typical minimum off time | TOFF_min_norm |  | 10 |  | us |  | 6 |
| Typical maximum off time | TOFF_max_norm |  | 1.4 |  | ms |  | 6 |
| Maximum off time in dynamic response mode | TOFF_max_FDR |  | 420 |  | us |  | 6 |
| Maximum on time | TON_max |  | 40 |  | us |  | 6 |
| Internal soft-start time | Tss |  | 4 |  | ms |  | 6 |
| Auto-recovery delay time | TAuto_Recovery |  | 2 |  | s |  | 6 |
| Overtemperature protection threshold | TSD |  | 150 |  | °C |  | 6 |
| Power MOSFET breakdown voltage | VBR |  | 200 |  | V |  | 6 |
| Static on-resistance (U3213E) | Rdson |  | 0.71 |  | Ω |  | 6 |

## CAD (KiCad official)

- Symbol: `U3213E`
- Footprint: `Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm`
- 3D model: ESOP-8 (KiCad packages3D, STEP)
- 3D model files: `u3213e-etched.step` / `u3213e-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `u3213e.step` / `u3213e.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UNI SEMIC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8756288138900066304) (12 pp, sha256 `f71963cde1218ff9`, retrieved 2026-10-18, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/u3213e-datasheet.pdf)