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TYN612RG

STMicroelectronics · Thyristors (SCR)/Modules · TO-220AB

TYN612RG from STMicroelectronics, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate trigger input; IGT max 15 mA (TYN612RG), VGT max 1.3 V, peak gate current IGM max 4 A (tp = 20 µs), VRGM max 5 V reverse gate voltage.
2 A passive Anode main terminal; also internally connected to the mounting tab. On-state RMS current IT(RMS) 12 A (Tc = 110 °C), repetitive peak off-state voltage VDRM 600 V.
3 K passive Cathode main terminal; on-state voltage VTM max 1.6 V at ITM = 24 A (tp = 380 µs, Tj = 25 °C), holding current IH max 30 mA.
TAB A passive Mounting tab, internally connected to Anode (pin 2); Rth(j-c) = 1.3 °C/W. Recommended torque 0.4 to 0.6 N·m.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current IGT 2 15 mA VD = 12 V, RL = 33 3
Gate trigger voltage VGT 1.3 V 3
Gate non-trigger voltage VGD 0.2 V VD = VDRM, RL = 3.3 k, Tj = 125 °C 3
Holding current IH 30 mA IT = 500 mA, gate open 3
Latching current IL 60 mA IG = 1.2 IGT 3
Critical rate of rise of off-state voltage dV/dt 200 V/µs VD = 67% VDRM, gate open, Tj = 125 °C 3
On-state voltage VTM 1.6 V ITM = 24 A, tp = 380 µs, Tj = 25 °C 3
Threshold voltage Vto 0.85 V Tj = 125 °C 3
Dynamic resistance Rd 30 mΩ Tj = 125 °C 3
Repetitive peak off-state current IDRM 5 µA VD = VDRM, Tj = 25 °C 3
Repetitive peak reverse current IRRM 5 µA VR = VRRM, Tj = 25 °C 3
Repetitive peak off-state current IDRM 2 mA VD = VDRM, Tj = 125 °C 3
Repetitive peak reverse current IRRM 2 mA VR = VRRM, Tj = 125 °C 3
Repetitive peak off-state and reverse voltage VDRM / VRRM 600 V 600 V column of device summary for TYN612 1
On-state RMS current IT(RMS) 12 A 180° conduction angle, Tc = 110 °C 2
Average on-state current IT(AV) 8 A 180° conduction angle 2
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns, F = 60 Hz, Tj = 125 °C 2
Peak gate current IGM 4 A tp = 20 µs, Tj = 125 °C 2
Average gate power dissipation PG(AV) 1 W Tj = 125 °C 2
Maximum peak reverse gate voltage VRGM 5 V 2
Storage junction temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 125 °C 2
Junction to case thermal resistance (DC) Rth(j-c) 1.3 °C/W DC, TO-220AB 3
Junction to ambient thermal resistance (DC) Rth(j-a) 60 °C/W DC, TO-220AB 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing pc Base qty. (pc) Delivery mode 15

CAD (KiCad official)

  • Symbol: TYN612RG
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: tyn612rg-etched.step / tyn612rg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tyn612rg.step / tyn612rg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (17 pp, sha256 de2df9b9d5beb4a3, retrieved 2026-10-20, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF