component
TXS4558RUKR
Public Made by Adomby adom
Texas Instruments Translators, Level Shifters, WQFN-20-EP(3x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownTXS4558RUKR
Texas Instruments · Translators, Level Shifters · WQFN-20-EP(3x3)
TXS4558RUKR from Texas Instruments, in a WQFN-20-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VSIM2 | power_out | 1.8 V/2.95 V SIM2 supply output from the VBATT-fed LDO, enabled by EN2 and set by VSEL2 (1.8 V when low, 2.95 V when high), sourcing up to 50 mA. |
| 2 | VCC | power_in | 1.8-V supply for device operation and the baseband-side I/O buffers, with a recommended operating range of 1.7 V to 3.3 V. |
| 3 | VBATT | power_in | Battery power supply input for the integrated LDOs, specified at 2.3 V to 5.5 V. |
| 4 | VSIM1 | power_out | 1.8 V/2.95 V SIM1 supply output from the VBATT-fed LDO, enabled by EN1 and set by VSEL1 (1.8 V when low, 2.95 V when high), sourcing up to 50 mA. |
| 5 | SIM1CLK | output | Level-shifted clock output to SIM1 in the VSIM1 domain, driven from CLK when SIM1 is selected or when CLKRUN1 is high. |
| 6 | SIM1RST | output | Level-shifted reset output to SIM1 in the VSIM1 domain, whose level is latched at the last state when SIM1 is deselected. |
| 7 | SIM1I/O | bidirectional | Bidirectional level-shifted data line to SIM1 in the VSIM1 domain, becoming high impedance when SIM1 is deselected with CSEL. |
| 8 | I/O | bidirectional | Baseband-side bidirectional data pin in the VCC domain that connects to SIM1 or SIM2 as selected by CSEL. |
| 9 | RST | input | Baseband reset input in the VCC domain that is passed to the SIMxRST of the selected card. |
| 10 | CLK | input | Baseband clock input in the VCC domain that is level-shifted to the SIMxCLK of the selected card, or of either card when its CLKRUNx is high. |
| 11 | EN1 | input | Enable input for the SIM1 interface in the VCC domain that powers VSIM1 and starts the SIM1 activation sequence when driven high. |
| 12 | VSEL1 | input | Input in the VCC domain that selects the LDO1 output voltage, 1.8 V when low and 2.95 V when high. |
| 13 | CSEL | input | Input in the VCC domain that selects the active card, SIM1 when low and SIM2 when high. |
| 14 | CLKRUN1 | input | Input in the VCC domain that controls SIM1CLK when SIM1 is deselected, keeping the clock running when high and bringing SIM1CLK low when low. |
| 15 | CLKRUN2 | input | Input in the VCC domain that controls SIM2CLK when SIM2 is deselected, keeping the clock running when high and bringing SIM2CLK low when low. |
| 16 | VSEL2 | input | Input in the VCC domain that selects the LDO2 output voltage, 1.8 V when low and 2.95 V when high. |
| 17 | EN2 | input | Enable input for the SIM2 interface in the VCC domain that powers VSIM2 and starts the SIM2 activation sequence when driven high. |
| 18 | SIM2I/O | bidirectional | Bidirectional level-shifted data line to SIM2 in the VSIM2 domain, becoming high impedance when SIM2 is deselected with CSEL. |
| 19 | SIM2RST | output | Level-shifted reset output to SIM2 in the VSIM2 domain, whose level is latched at the last state when SIM2 is deselected. |
| 20 | SIM2CLK | output | Level-shifted clock output to SIM2 in the VSIM2 domain, driven from CLK when SIM2 is selected or when CLKRUN2 is high. |
| 21 | GND | power_in | Exposed center thermal pad that must be electrically connected to ground and soldered to the PCB ground plane. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WQFN-20-EP(3x3) |
| Category | Logic |
| Pins | 21 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VCC supply voltage | VCC | 1.7 | 3.3 | V | 4 | ||
| High-level input voltage (max) | VIH | 3.3 | V | Applies to pins: EN1, EN2, RST, CLK, I/O, CLKRUN1, CLKRUN2, VSEL1, VSEL2, CSEL | 4 | ||
| Low-level input voltage (min) | VIL | 0 | V | Applies to pins: EN1, EN2, RST, CLK, I/O, CLKRUN1, CLKRUN2, VSEL1, VSEL2, CSEL | 4 | ||
| Input transition rise or fall rate | Δt/Δv | 5 | ns/V | 4 | |||
| Operating free-air temperature | TA | -40 | 85 | °C | 4 | ||
| VCC supply voltage range | VCC | -0.3 | 4 | V | 3 | ||
| Input voltage range, VCC-port | VI | -0.5 | 4.6 | V | VCC-port | 3 | |
| Input voltage range, VSIMx-port | VI | -0.5 | 4.6 | V | VSIMx-port | 3 | |
| Input voltage range, control inputs | VI | -0.5 | 4.6 | V | Control inputs | 3 | |
| Voltage applied to output in high-impedance or power-off state, VCC-port | VO | -0.5 | 4.6 | V | High-impedance or power-off state, VCC-port | 3 | |
| Voltage applied to output in high-impedance or power-off state, VSIMx-port | VO | -0.5 | 4.6 | V | High-impedance or power-off state, VSIMx-port | 3 | |
| Voltage applied to output in high-impedance or power-off state, control inputs | VO | -0.5 | 4.6 | V | High-impedance or power-off state, control inputs | 3 | |
| Voltage applied to output in high or low state, VCC-port | VO | -0.5 | 4.6 | V | High or low state, VCC-port | 3 | |
| Voltage applied to output in high or low state, VSIMx-port | VO | -0.5 | 4.6 | V | High or low state, VSIMx-port | 3 | |
| Voltage applied to output in high or low state, control inputs | VO | -0.5 | 4.6 | V | High or low state, control inputs | 3 | |
| Input clamp current | IIK | -50 | mA | VI < 0 | 3 | ||
| Output clamp current | IOK | -50 | mA | VO < 0 | 3 | ||
| Continuous output current | IO | -50 | 50 | mA | 3 | ||
| Continuous current through VCCA or GND | -100 | 100 | mA | 3 | |||
| Storage temperature range (level translator) | Tstg | -65 | 150 | °C | 3 | ||
| Input voltage range (LDO) | VBAT | -0.3 | 6 | V | 3 | ||
| Output voltage range (LDO) | VOUT | -0.3 | 6 | V | 3 | ||
| Junction temperature range | TJ | -55 | 150 | °C | 3 | ||
| Storage temperature range (LDO) | Tstg | -55 | 150 | °C | 3 | ||
| Low-level output voltage, SIM1_I/O open-drain | VOL | 0.3 | V | IOL = 1 mA, Open-Drain | 4 | ||
| Low-level output voltage, SIM2_I/O open-drain | VOL | 0.3 | V | IOL = 1 mA, Open-Drain | 4 | ||
| Low-level output voltage, I/O open-drain | VOL | 0.3 | V | IOL = 1 mA, Open-Drain | 4 | ||
| Input current, control inputs | II | -1 | 1 | µA | VI = EN1, EN2, CLKRUN1, CSEL, CLKRUN2, VSEL1, VSEL2; 1.7 V to 3.3 V | 4 | |
| I/O ground current (ICC I/O) | ICC | -5 | 5 | µA | VI = VCCI, IO = 0, 1.7 V to 3.3 V | 4 | |
| Input voltage (LDO) | VBAT | 2.3 | 5.5 | V | 4 | ||
| Output voltage, Class-B mode | VSIM1,2 | 2.85 | 2.95 | 3.05 | V | Class-B mode, 0 mA < ISIM1,2 < 50 mA | 4 |
| Output voltage, Class-C mode | VSIM1,2 | 1.7 | 1.8 | 1.9 | V | Class-C mode, 0 mA < ISIM1,2 < 50 mA | 4 |
| Dropout voltage | VDO | 100 | mV | IOUT = 50 mA | 4 | ||
| Operating current | IVBAT | 40 | 50 | µA | VSIM1 = 2.95 V, VSIM2 = 0, ISIM1 = 0 µA | 4 | |
| Shutdown current (IGND) | ISHDN | 1 | µA | VENx ≤ 0.4 V, (VSIMx + VDO) ≤ VBAT ≤ 5.5 V, TJ = 85°C | 4 | ||
| Power-supply rejection ratio | PSRR | 50 | dB | f = 1 kHz; VBAT = 3.15 V, VSIM1,2 = 1.8 V or 2.95 V, COUT = 1 µF, IOUT = 10 mA | 4 | ||
| Power-supply rejection ratio | PSRR | 40 | dB | f = 10 kHz; VBAT = 3.15 V, VSIM1,2 = 1.8 V or 2.95 V, COUT = 1 µF, IOUT = 10 mA | 4 | ||
| Start-up time | TSTR | 400 | µS | VSIM1,2 = 1.8 V or 3 V, IOUT = 50 mA, COUT = 1 µF | 4 | ||
| Operating junction temperature | TJ | -40 | 125 | °C | 4 | ||
| I/O pull-up resistance | RI/OPU | 16 | 20 | 24 | kΩ | 5 | |
| SIM_I/O pull-up resistance | RSIMPU | 7.4 | 8 | 8.7 | kΩ | SIM enabled and selected with CSEL | 5 |
| SIMx_I/O rise/fall time (I/O) | trA | 1 | µs | VCC = 1.8 V ± 0.15 V | 5 | ||
| SIMx_RST rise/fall time | 1 | µs | VCC = 1.8 V ± 0.15 V | 5 | |||
| SIMx_CLK rise/fall time | trB | 50 | ns | VCC = 1.8 V ± 0.15 V | 5 | ||
| SIMx_I/O rise/fall time | 100 | ns | VCC = 1.8 V ± 0.15 V | 5 | |||
| Maximum SIMx_CLK frequency | fmax | 25 | MHz | VCC = 1.8 V ± 0.15 V | 5 | ||
| SIMx_CLK duty cycle | Duty Cycle | 40 | 60 | % | VCC = 1.8 V ± 0.15 V | 5 |
CAD (KiCad official)
- Symbol:
TXS4558RUKR - Footprint:
Package_DFN_QFN:UQFN-20-1EP_3x3mm_P0.4mm_EP1.85x1.85mm - 3D model: WQFN-20-EP(3x3) (KiCad packages3D, STEP)
- 3D model files:
txs4558rukr-etched.step/txs4558rukr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);txs4558rukr.step/txs4558rukr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (19 pp, sha256
7fb7bc94abc6f554, retrieved 2026-10-19, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).