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Contents

README

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TX20N03

XDS · MOSFETs · TO-252

TX20N03 from XDS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 1.2 V min to 2.5 V max at ID=250uA.
2 D passive Drain, also connected to the exposed tab; drain-source voltage 30 V max and continuous drain current 20 A at TC=25℃.
3 S passive Source; continuous source current 20 A max and pulsed source current 60 A max through the body diode.

Key specifications

Parameter Value
Manufacturer XDS
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 20 A VGS @ 10V, TC=25℃ 1
Continuous Drain Current ID 18 A VGS @ 10V, TC=100℃ 1
Continuous Drain Current ID 8.2 A VGS @ 10V, TA=25℃ 1
Continuous Drain Current ID 6.5 A VGS @ 10V, TA=70℃ 1
Pulsed Drain Current IDM 60 A 1
Single Pulse Avalanche Energy EAS 22.1 mJ VDD=25V, VGS=10V, L=0.1mH, IAS=21A 1
Avalanche Current IAS 21 A 1
Total Power Dissipation PD 25 W TC=25℃ 1
Total Power Dissipation PD 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-Case RθJC 5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 17 20 mΩ VGS=10V, ID=15A 2
Static Drain-Source On-Resistance RDS(ON) 22 30 mΩ VGS=4.5V, ID=10A 2
Gate Threshold Voltage VGS(th) 1.2 1.5 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 2.5 5 VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (4.5V) Qg 6.2 8.7 nC VDS=15V, VGS=4.5V, ID=15A 2
Gate-Source Charge Qgs 2.4 3.4 nC VDS=15V, VGS=4.5V, ID=15A 2
Gate-Drain Charge Qgd 2.5 3.5 nC VDS=15V, VGS=4.5V, ID=15A 2
Turn-On Delay Time Td(on) 3 6 ns VDD=15V, VGS=10V, RG=3.3, ID=15A 2
Rise Time Tr 7.6 14 ns VDD=15V, VGS=10V, RG=3.3, ID=15A 2
Turn-Off Delay Time Td(off) 21 42 ns VDD=15V, VGS=10V, RG=3.3, ID=15A 2
Fall Time Tf 4 8 ns VDD=15V, VGS=10V, RG=3.3, ID=15A 2
Input Capacitance Ciss 572 801 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 81 113 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 65 91 pF VDS=15V, VGS=0V, f=1MHz 2
Continuous Source Current IS 20 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 60 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
VGS(th) Temperature Coefficient ΔVGS(th) -5.2 mV/℃ 2
BVDSS Temperature Coefficient ΔBVDSS/ΔTJ 0.023 V/℃ Reference to 25℃, ID=1mA 2
Forward Transconductance gfs 21.6 S VDS=5V, ID=15A 2
Reverse Recovery Time trr 17 nS IF=15A, dI/dt=100A/µs, TJ=25℃ 2
Reverse Recovery Charge Qrr 3 nC IF=15A, dI/dt=100A/µs, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: TX20N03
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: tx20n03-etched.step / tx20n03-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tx20n03.step / tx20n03.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XDS datasheet (4 pp, sha256 3dabe1efdaf1b94a, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF