component
TX15N10B
Public Made by Adomby adom
XDS MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 24d ago |
| viewers | 24d ago |
| package.json | 24d ago |
| page.json | 24d ago |
| README.md | 24d ago |
| tx15n10b-etched.glb | 24d ago |
| tx15n10b-etched.step | 24d ago |
| tx15n10b-hero.glb | 24d ago |
| tx15n10b-hero.overlay.json | 24d ago |
| tx15n10b.glb | 24d ago |
| tx15n10b.kicad_mod | 24d ago |
| tx15n10b.kicad_sym | 24d ago |
| tx15n10b.lbr | 24d ago |
| tx15n10b.step | 24d ago |
TX15N10B
XDS · MOSFETs · TO-252
TX15N10B from XDS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage limited to ±20 V (VGSS), with threshold of 1 V min to 3 V max at ID=250 µA. |
| 2 | Drain | passive | Drain terminal; drain-source voltage rated 100 V (VDSS) with continuous drain current of 15 A at Tc=25℃ and 59 A pulsed. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, connected to the body diode anode, with diode forward voltage of 1.2 V max at IS=8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XDS |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 100 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 15 | A | Tc=25℃ | 2 | ||
| Continuous Drain Current | ID | 14 | A | Tc=70℃ | 2 | ||
| Pulsed Drain Current | IDM | 59 | A | 2 | |||
| Power Dissipation | PD | 34.7 | W | Tc=25℃ | 2 | ||
| Power Dissipation | PD | 22.2 | W | Tc=70℃ | 2 | ||
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 | 175 | ℃ | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250μA | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VDS=VGS, ID=250μA | 3 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V, VGS=0V | 3 | ||
| Drain-Source On-Resistance | RDS(ON) | 80 | 100 | mΩ | VGS=10V, ID=8A | 3 | |
| Diode Forward Voltage | VSD | 0.9 | 1.2 | V | IS=8A, VGS=0V | 3 | |
| Thermal resistance, case to sink | RthCS | 0.5 | ℃/W | 2 | |||
| Thermal resistance junction to case | RthJC | 3.6 | ℃/W | 2 | |||
| Thermal resistance junction to ambient | RthJA | 110 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
TX15N10B - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
tx15n10b-etched.step/tx15n10b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tx15n10b.step/tx15n10b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XDS datasheet (6 pp, sha256
4886564712cd6ba0, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).