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TTD18P10AT

Public Made by Adom

by adom

WUXI UNIGROUP MICRO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TTD18P10AT

WUXI UNIGROUP MICRO · MOSFETs · TO-252

TTD18P10AT from WUXI UNIGROUP MICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20V, with threshold of -1.0V to -3.0V at ID = -250µA.
2 D passive Drain, also connected to the exposed tab; drain-source voltage rated -100V and continuous drain current -18A.
3 S passive Source; body diode continuous current rated -18A from source to drain.

Key specifications

Parameter Value
Manufacturer WUXI UNIGROUP MICRO
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (VGS = 0V) VDSS -100 V VGS = 0V 1
Continuous Drain Current ID -18 A 1
Pulsed Drain Current IDM -90 A Repetitive rating, pulse width limited by maximum junction temperature (note 1) 1
Gate-Source Voltage VGSS -20 20 V 1
Single Pulse Avalanche Energy EAS 60 mJ note 2 1
Avalanche Current IAS -20 A note 1 1
Power Dissipation PD 113 W TC = 25ºC 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 ºC 1
Thermal Resistance, Junction-to-Case RthJC 1.32 K/W 1
Thermal Resistance, Junction-to-Ambient RthJA 60 K/W 1
Drain-Source Breakdown Voltage V(BR)DSS -100 V VGS = 0V, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -100V, VGS = 0V, TJ = 25ºC 2
Zero Gate Voltage Drain Current IDSS -100 μA VDS = -100V, VGS = 0V, TJ = 150ºC 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) -1 -1.7 -3 V VDS = VGS, ID = -250µA 2
Drain-Source On-Resistance (VGS = -10V) RDS(on) 80 96 mΩ VGS = -10V, ID = -9A 2
Drain-Source On-Resistance (VGS = -4.5V) RDS(on) 90 108 mΩ VGS = -4.5V, ID = -9A 2
Forward Transconductance gfs 5.9 S VDS = -50V, ID = -10A 2
Input Capacitance Ciss 4182 pF VGS = 0V, VDS = -50V, f = 1.0MHz 2
Output Capacitance Coss 102 pF VGS = 0V, VDS = -50V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 53 pF VGS = 0V, VDS = -50V, f = 1.0MHz 2
Total Gate Charge Qg 70 nC VDD = -50V, ID = -18A, VGS = -10V 2
Gate-Source Charge Qgs 13 nC VDD = -50V, ID = -18A, VGS = -10V 2
Gate-Drain Charge Qgd 16 nC VDD = -50V, ID = -18A, VGS = -10V 2
Turn-on Delay Time td(on) 16 ns VDD = -50V, ID = -18A, RG = 2.5Ω 2
Turn-on Rise Time tr 73 ns VDD = -50V, ID = -18A, RG = 2.5Ω 2
Turn-off Delay Time td(off) 34 ns VDD = -50V, ID = -18A, RG = 2.5Ω 2
Turn-off Fall Time tf 57 ns VDD = -50V, ID = -18A, RG = 2.5Ω 2
Continuous Body Diode Current IS -18 A TC = 25ºC 2
Pulsed Diode Forward Current ISM -90 A 2
Body Diode Voltage VSD -1.2 V TJ = 25ºC, ISD = -18A, VGS = 0V 2
Reverse Recovery Time trr 89 ns IF = -18A, diF/dt = 100A/μs 2
Reverse Recovery Charge Qrr 66 nC IF = -18A, diF/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: TTD18P10AT
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ttd18p10at-etched.step / ttd18p10at-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ttd18p10at.step / ttd18p10at.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WUXI UNIGROUP MICRO datasheet (8 pp, sha256 b7398927fc130c4c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF