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TT1201SBX
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Shenzhen JingYang ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TT1201SBX
Shenzhen JingYang · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
TT1201SBX from Shenzhen JingYang, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O_1 | bidirectional | One of two bidirectional TVS terminals; the device protects one data line between I/O_1 and I/O_2 with a 12.0 V nominal reverse working voltage (VRWM) and 0.35 pF typical parasitic capacitance at VR = 0 V, f = 1 MHz. |
| 2 | I/O_2 | bidirectional | The other bidirectional TVS terminal, paired with I/O_1, with reverse leakage of 1.0 µA maximum at VRWM = 12 V and T = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| ESD per IEC 61000-4-2 (Air) | VESD | -15 | 15 | kV | 2 | ||
| ESD per IEC 61000-4-2 (Contact) | VESD | -12 | 12 | kV | 2 | ||
| Reverse Leakage Current @ VRWM | IR | 0.01 | 1 | μA | VRWM = 12V, T = 25°C, between I/O and I/O | 2 | |
| Reverse Breakdown Voltage @ IT | VBR | 14 | 16 | 18 | V | IT = 1mA, between I/O and I/O | 2 |
| Clamping Voltage @ IPP | VC | 18 | 20 | V | IPP = 1A, tp = 8/20μs, between I/O and I/O | 2 | |
| Parasitic Capacitance | CESD | 0.35 | 0.55 | pF | VR = 0V, f = 1MHz, between I/O and I/O | 2 | |
| Nominal Reverse Working Voltage | VRWM | 12 | V | 2 | |||
| Operating Temperature | TOPT | -55 | 125 | °C | 2 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
TT1201SBX - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
tt1201sbx-etched.step/tt1201sbx-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tt1201sbx.step/tt1201sbx.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen JingYang datasheet (5 pp, sha256
1487e46f46a8216f, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TT1201SBX
**Shenzhen JingYang** · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
TT1201SBX from Shenzhen JingYang, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O_1 | bidirectional | One of two bidirectional TVS terminals; the device protects one data line between I/O_1 and I/O_2 with a 12.0 V nominal reverse working voltage (VRWM) and 0.35 pF typical parasitic capacitance at VR = 0 V, f = 1 MHz. |
| 2 | I/O_2 | bidirectional | The other bidirectional TVS terminal, paired with I/O_1, with reverse leakage of 1.0 µA maximum at VRWM = 12 V and T = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| ESD per IEC 61000-4-2 (Air) | VESD | -15 | | 15 | kV | | 2 |
| ESD per IEC 61000-4-2 (Contact) | VESD | -12 | | 12 | kV | | 2 |
| Reverse Leakage Current @ VRWM | IR | | 0.01 | 1 | μA | VRWM = 12V, T = 25°C, between I/O and I/O | 2 |
| Reverse Breakdown Voltage @ IT | VBR | 14 | 16 | 18 | V | IT = 1mA, between I/O and I/O | 2 |
| Clamping Voltage @ IPP | VC | | 18 | 20 | V | IPP = 1A, tp = 8/20μs, between I/O and I/O | 2 |
| Parasitic Capacitance | CESD | | 0.35 | 0.55 | pF | VR = 0V, f = 1MHz, between I/O and I/O | 2 |
| Nominal Reverse Working Voltage | VRWM | | 12 | | V | | 2 |
| Operating Temperature | TOPT | -55 | | 125 | °C | | 2 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 2 |
## CAD (KiCad official)
- Symbol: `TT1201SBX`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `tt1201sbx-etched.step` / `tt1201sbx-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tt1201sbx.step` / `tt1201sbx.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shenzhen JingYang datasheet](docs/tt1201sbx-datasheet.pdf) (5 pp, sha256 `1487e46f46a8216f`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tt1201sbx-datasheet.pdf)