component
TT0701MBX
Public Made by Adomby adom
Shenzhen JingYang ESD Protection Devices, DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTT0701MBX
Shenzhen JingYang · ESD Protection Devices · DFN1006-2L
TT0701MBX from Shenzhen JingYang, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O_1 | bidirectional | Bidirectional TVS data/control/power line terminal; bi-directional protection against ESD and transients with VRWM 7.0 V and 15 pF typical capacitance between I/O_1 and I/O_2. |
| 2 | I/O_2 | bidirectional | Bidirectional TVS data/control/power line terminal; bi-directional protection against ESD and transients with VRWM 7.0 V and 15 pF typical capacitance between I/O_2 and I/O_1. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | DFN1006-2L |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Leakage Current @ VRWM | IR | 0.1 | μA | VRWM = 7V, T = 25C, Between I/O_1 and I/O_2 | 2 | ||
| Reverse Breakdown Voltage @ IT | VBR | 7.2 | V | IT = 1mA, Between I/O_1 and I/O_2 | 2 | ||
| Clamping Voltage @ IPP = 1A | VC | 12 | V | IPP = 1A, tp = 8/20μs, Between I/O_1 and I/O_2 | 2 | ||
| ESD per IEC 61000-4-2 (Contact) | VESD | -30 | 30 | kV | 2 | ||
| ESD per IEC 61000-4-2 (Air) | -30 | 30 | kV | 2 | |||
| Peak Pulse Current | IPP | 6 | A | tp=8/20us | 2 | ||
| Peak Pulse Power | PPP | 72 | W | 8/20μs | 2 | ||
| Operating Temperature | TOPT | -55 | 125 | C | 2 | ||
| Storage Temperature | TSTG | -55 | 150 | C | 2 | ||
| Parasitic Capacitance | CESD | 15 | pF | VR = 0V, f = 1MHz, Between I/O_1 and I/O_2 | 2 | ||
| Nominal Reverse Working Voltage | VRWM | 7 | V | 2 |
CAD (KiCad official)
- Symbol:
TT0701MBX - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
tt0701mbx-etched.step/tt0701mbx-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tt0701mbx.step/tt0701mbx.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen JingYang datasheet (6 pp, sha256
10a45a984e527100, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).