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TT0514VLX

Shenzhen JingYang · ESD And Surge Protection (TVS/ESD) · SOT-23-6L

TT0514VLX from Shenzhen JingYang, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I/O_1 bidirectional Data line I/O with TVS protection, rated 5.0 V nominal reverse working voltage with 0.1 µA typical leakage at VRWM, and withstands over 1000 ESD strikes at ±8 kV contact discharge.
2 GND power_in Negative reference pin that should connect to the PCB GND, with the connection kept as short as possible to minimize parasitic inductance.
3 I/O_3 bidirectional Data line I/O with TVS protection, rated 5.0 V nominal reverse working voltage with 0.1 µA typical leakage at VRWM, and withstands over 1000 ESD strikes at ±8 kV contact discharge.
4 I/O_4 bidirectional Data line I/O with TVS protection, rated 5.0 V nominal reverse working voltage with 0.1 µA typical leakage at VRWM, and withstands over 1000 ESD strikes at ±8 kV contact discharge.
5 VCC power_in Connects to the PCB VCC rail through a wide, short connection to limit parasitic inductance; the datasheet gives no VCC voltage limit for this pin.
6 I/O_2 bidirectional Data line I/O with TVS protection, rated 5.0 V nominal reverse working voltage with 0.1 µA typical leakage at VRWM, and withstands over 1000 ESD strikes at ±8 kV contact discharge.

Key specifications

Parameter Value
Manufacturer Shenzhen JingYang
Package SOT-23-6L
Category Circuit Protection
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
ESD per IEC 61000-4-2 (Air) VESD -27 27 kV ESD per IEC 61000-4-2 (Air) 2
ESD per IEC 61000-4-2 (Contact) VESD -17 17 kV ESD per IEC 61000-4-2 (Contact) 2
Operating Temperature TOPT -55 125 C 2
Storage Temperature TSTG -55 150 C 2
Reverse Leakage Current @ VRWM IR 0.1 1 μA VRWM = 5V, T = 25C, Between I/O and GND 2
Reverse Breakdown Voltage @ IT VBR 6 8 10 V IT = 1mA, Between I/O and GND 2
Parasitic Capacitance I/O to GND CESD 0.7 0.8 pF VR = 0V, f = 1MHz, Between I/O and GND 2
Parasitic Capacitance I/O to I/O CESD 0.35 pF VR = 0V, f = 1MHz, Between I/O and I/O 2
Nominal Reverse Working Voltage VRWM 5 V 2
Clamping Voltage @ IPP VC 12 V IPP = 1A, tp = 8/20μs, Between I/O and GND 2

CAD (KiCad official)

  • Symbol: TT0514VLX
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: tt0514vlx-etched.step / tt0514vlx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tt0514vlx.step / tt0514vlx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen JingYang datasheet (8 pp, sha256 eb4a2e9208a762e6, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF