component
TT0511TBX
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Shenzhen JingYang ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TT0511TBX
Shenzhen JingYang · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
TT0511TBX from Shenzhen JingYang, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O | bidirectional | Protected I/O line of this unidirectional ESD TVS, with 5.0V nominal reverse working voltage (VRWM), 100nA maximum reverse leakage at VRWM, and 0.65pF typical capacitance (I/O-GND) at 0V. |
| 2 | GND | power_in | Ground reference pin for the protection diode, connected to the GND side of the I/O-GND path; the datasheet gives no further electrical limit for this pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| ESD voltage, air discharge | VESD | -25 | 25 | kV | ESD per IEC61000-4-2 (Air) | 2 | |
| ESD voltage, contact discharge | VESD | -20 | 20 | kV | ESD per IEC61000-4-2 (Contact) | 2 | |
| Operating Temperature | TOPT | -55 | 125 | C | 2 | ||
| Storage Temperature | TSTG | -55 | 150 | C | 2 | ||
| Reverse Breakdown Voltage | VBR | 6 | 8 | V | IT = 1mA | 2 | |
| Clamping Voltage | VC | 9.6 | V | IPP = 8.0A, tp= 100ns | 2 | ||
| Clamping Voltage | VC | 11.5 | V | IPP = 16.0A, tp= 100ns | 2 | ||
| Clamping Voltage | VC | 15 | V | IPP = 4.0A, tp = 8/20μs | 2 | ||
| Maximum Peak Pulse Current | IPP | 4 | A | 2 | |||
| Peak Pulse Power (8/20μs) | PPK | 60 | W | 2 | |||
| Nominal Reverse Working Voltage | VRWM | 5 | V | 2 | |||
| Reverse Leakage Current | IR | 1 | 100 | nA | VRWM = 5.0V, T = 25C | 2 | |
| Dynamic resistance | Rdyn | 0.24 | Ω | IPP = 12.0A, tp = 100ns | 2 | ||
| Parasitic Capacitance | CESD | 0.65 | pF | VR = 0V, f = 1MHz | 2 |
CAD (KiCad official)
- Symbol:
TT0511TBX - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
tt0511tbx-etched.step/tt0511tbx-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tt0511tbx.step/tt0511tbx.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen JingYang datasheet (6 pp, sha256
a05ddcbcd0d827bb, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TT0511TBX
**Shenzhen JingYang** · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
TT0511TBX from Shenzhen JingYang, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O | bidirectional | Protected I/O line of this unidirectional ESD TVS, with 5.0V nominal reverse working voltage (VRWM), 100nA maximum reverse leakage at VRWM, and 0.65pF typical capacitance (I/O-GND) at 0V. |
| 2 | GND | power_in | Ground reference pin for the protection diode, connected to the GND side of the I/O-GND path; the datasheet gives no further electrical limit for this pin. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| ESD voltage, air discharge | VESD | -25 | | 25 | kV | ESD per IEC61000-4-2 (Air) | 2 |
| ESD voltage, contact discharge | VESD | -20 | | 20 | kV | ESD per IEC61000-4-2 (Contact) | 2 |
| Operating Temperature | TOPT | -55 | | 125 | C | | 2 |
| Storage Temperature | TSTG | -55 | | 150 | C | | 2 |
| Reverse Breakdown Voltage | VBR | 6 | | 8 | V | IT = 1mA | 2 |
| Clamping Voltage | VC | | | 9.6 | V | IPP = 8.0A, tp= 100ns | 2 |
| Clamping Voltage | VC | | | 11.5 | V | IPP = 16.0A, tp= 100ns | 2 |
| Clamping Voltage | VC | | | 15 | V | IPP = 4.0A, tp = 8/20μs | 2 |
| Maximum Peak Pulse Current | IPP | | | 4 | A | | 2 |
| Peak Pulse Power (8/20μs) | PPK | | | 60 | W | | 2 |
| Nominal Reverse Working Voltage | VRWM | | | 5 | V | | 2 |
| Reverse Leakage Current | IR | | 1 | 100 | nA | VRWM = 5.0V, T = 25C | 2 |
| Dynamic resistance | Rdyn | | 0.24 | | Ω | IPP = 12.0A, tp = 100ns | 2 |
| Parasitic Capacitance | CESD | | 0.65 | | pF | VR = 0V, f = 1MHz | 2 |
## CAD (KiCad official)
- Symbol: `TT0511TBX`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `tt0511tbx-etched.step` / `tt0511tbx-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tt0511tbx.step` / `tt0511tbx.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shenzhen JingYang datasheet](docs/tt0511tbx-datasheet.pdf) (6 pp, sha256 `a05ddcbcd0d827bb`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tt0511tbx-datasheet.pdf)