component
TT0501VBX
Public Made by Adomby adom
Shenzhen JingYang ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
| tt0501vbx-etched.glb | 13d ago |
| tt0501vbx-etched.step | 13d ago |
| tt0501vbx-hero.glb | 13d ago |
| tt0501vbx-hero.overlay.json | 13d ago |
| tt0501vbx.glb | 13d ago |
| tt0501vbx.kicad_mod | 13d ago |
| tt0501vbx.kicad_sym | 13d ago |
| tt0501vbx.lbr | 13d ago |
| tt0501vbx.step | 13d ago |
TT0501VBX
Shenzhen JingYang · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
TT0501VBX from Shenzhen JingYang, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O_1 | bidirectional | Bidirectional TVS/ESD protection terminal for one high-speed data, control or power line, rated for a nominal reverse working voltage of 5.0 V with 2.0 pF maximum parasitic capacitance between I/O_1 and I/O_2. |
| 2 | I/O_2 | bidirectional | Bidirectional TVS/ESD protection terminal paired with I/O_1, with 1.0 mA reverse breakdown test current giving 6.0 V to 9.0 V breakdown and 1.0 µA maximum reverse leakage at 5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| ESD per IEC 61000-4-2 (Air) | VESD | -25 | 25 | kV | 2 | ||
| ESD per IEC 61000-4-2 (Contact) | VESD | -17 | 17 | kV | 2 | ||
| Operating Temperature | TOPT | -55 | 125 | C | 2 | ||
| Storage Temperature | TSTG | -55 | 150 | C | 2 | ||
| Reverse Breakdown Voltage @ IT | VBR | 6 | 8 | 9 | V | IT = 1mA, Between I/O and I/O | 2 |
| Reverse Leakage Current @ VRWM | IR | 0.1 | 1 | μA | VRWM = 5V, T = 25C, Between I/O and I/O | 2 | |
| Parasitic Capacitance | CESD | 1 | 2 | pF | VR = 0V, f = 1MHz, Between I/O and I/O | 2 |
CAD (KiCad official)
- Symbol:
TT0501VBX - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
tt0501vbx-etched.step/tt0501vbx-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tt0501vbx.step/tt0501vbx.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen JingYang datasheet (5 pp, sha256
3d427a8007f9672f, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).