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TSP90N20MC

Public Made by Adom

by adom

Truesemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TSP90N20MC

Truesemi · MOSFETs · TO-220

TSP90N20MC from Truesemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with maximum gate-source voltage of ±20 V and threshold of 2 to 4 V.
2 D passive Drain; rated for 200 V drain-source voltage and 90 A continuous current at TC=25℃.
3 S passive Source; connected to the body diode anode, with continuous source current of 90 A.

Key specifications

Parameter Value
Manufacturer Truesemi
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 200 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID@TC=25℃ 90 A TC=25℃ 1
Continuous Drain Current ID@TC=100℃ 55 A TC=100℃ 1
Pulsed Drain Current IDM 270 A Repetitive rating; pulse width limited by maximum junction temperature 1
Single Pulse Avalanche Energy EAS 1000 mJ VDD=50V,VGS=10V,L=1mH,IAS=45A 1
Total Power Dissipation PD@TC=25℃ 350 W TC=25℃ 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Temperature Range TJ -55 175 ℃ Operating and Storage Temperature Range 1
Thermal Resistance Junction-case RθJC 0.4 ℃/W 1
Thermal Resistance Junction-ambient RθJA 40 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 200 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 25 mΩ VGS = 10 V, ID = 30A 2
Gate Threshold Voltage VGS(th) 2 4 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=160V , VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS= ± 20V , VDS=0V 2
Continuous Source Current IS 90 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 270 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD 1.5 V VGS=0V , IS=1A , TJ=25℃ 2
Forward Transconductance gfs 13 S VDS=20V, ID =3A 2
Input Capacitance Ciss 6000 pF VDS =25V, VGS = 0 V, f = 1MHz 2
Output Capacitance Coss 280 pF VDS =25V, VGS = 0 V, f = 1MHz 2
Reverse Transfer Capacitance Crss 25 pF VDS =25V, VGS = 0 V, f = 1MHz 2
Turn-On Delay Time td(on) 15 ns VDD=100V, ID=60A, RL =1.66Ω, RG=1Ω, VGS =10V 2
Rise Time tr 130 ns VDD=100V, ID=60A, RL =1.66Ω, RG=1Ω, VGS =10V 2
Turn-Off Delay Time td(off) 30 ns VDD=100V, ID=60A, RL =1.66Ω, RG=1Ω, VGS =10V 2
Fall Time tf 90 ns VDD=100V, ID=60A, RL =1.66Ω, RG=1Ω, VGS =10V 2
Gate Resistance Rg 2 Ω VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge Qg 60 nC ID=60A, VDD=100V, VGS =10V 2
Gate-Source Charge Qgs 18 nC ID=60A, VDD=100V, VGS =10V 2
Gate-Drain Charge Qgd 17 nC ID=60A, VDD=100V, VGS =10V 2

CAD (KiCad official)

  • Symbol: TSP90N20MC
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: tsp90n20mc-etched.step / tsp90n20mc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tsp90n20mc.step / tsp90n20mc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Truesemi datasheet (2 pp, sha256 4a090801c43d5575, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF