component
TSP50N20M
Public Made by Adomby adom
Truesemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTSP50N20M
Truesemi · MOSFETs · TO-220
TSP50N20M from Truesemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V maximum and threshold VGS(th) of 2 V to 4 V at ID = 250 µA. |
| 2 | D | passive | Drain; drain-source voltage rated 200 V with 50 A continuous drain current and 200 A pulsed. |
| 3 | S | passive | Source; connects to the body diode anode, with continuous source current of 50 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Truesemi |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 200 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 200V, VGS = 0V, TJ = 25ºC | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 0.041 | 0.046 | Ω | VGS = 10V, ID = 25A | 2 | |
| Continuous Source Current | ISD | 50 | A | Integral PN-diode in MOSFET | 2 | ||
| Pulsed Source Current | ISM | 200 | A | 2 | |||
| Body Forward Voltage | VSD | 1.5 | V | IS = 20A, VGS = 0V | 2 | ||
| Drain-Source Voltage | VDSS | 200 | V | TC = 25ºC | 1 | ||
| Continuous Drain Current | ID | 50 | A | TC = 25ºC | 1 | ||
| Pulsed Drain Current | IDM | 200 | A | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Power Dissipation | PD | 250 | W | TC = 25ºC | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Derating Factor above 25°C | 2.4 | W/ºC | above 25°C | 1 | |||
| Thermal Resistance, Junction-to-Case | RthJC | 0.5 | ºC/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RthJA | 62.5 | ºC/W | 1 |
CAD (KiCad official)
- Symbol:
TSP50N20M - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
tsp50n20m-etched.step/tsp50n20m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tsp50n20m.step/tsp50n20m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Truesemi datasheet (9 pp, sha256
ace6ad9bc9f7858e, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).