component
TSP40N20M
Public Made by Adomby adom
Truesemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TSP40N20M
Truesemi · MOSFETs · TO-220
TSP40N20M from Truesemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS=10V for the stated RDS(on) (max 65mΩ at ID=20A), absolute maximum gate-source voltage ±30V. |
| 2 | D | passive | Drain; 200V maximum drain-source voltage, 40A continuous drain current at TC=25℃ and 160A pulsed. |
| 3 | S | passive | Source; body diode continuous forward current 40A and pulsed 160A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Truesemi |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 | V | VGS = 0 V, ID = 250 uA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | uA | VDS = 200 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | uA | VDS = 200 V, TJ= 125℃ | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 20 V, VDS = 0 V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS =- 20 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS | 2 | 4 | V | VDS = VGS, ID = 250 uA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 50 | 65 | mΩ | VGS = 10 V, ID = 20A | 2 | |
| Continuous Source-Drain Diode Forward Current | IS | 40 | A | 2 | |||
| Pulsed Source-Drain Diode Forward Current | ISM | 160 | A | 2 | |||
| Source-Drain Diode Forward Voltage | VSD | 1.4 | V | IS = 40A, VGS = 0 V | 2 | ||
| Drain-Source Voltage | VDSS | 200 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | TC=25℃ | 1 | |
| Drain Current | ID | 40 | A | TC = 25℃ | 1 | ||
| Drain Current | ID | 25.3 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | 160 | A | Note 1 | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 1066 | mJ | Note 2 | 1 | ||
| Repetitive avalanche current | IAR | 40 | A | Note 1 | 1 | ||
| Repetitive Avalanche Energy | EAR | 5.8 | mJ | Note 1 | 1 | ||
| Power Dissipation | PD | 160 | W | TC=25℃ | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | 1 | V/℃ | ID = 250 uA, Referenced to 25℃ | 2 | ||
| Input Capacitance | Ciss | 2684 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 382 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 50 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 | ||
| Total Gate Charge | Qg | 62 | nC | VDS = 100 V, ID = 20A, VGS = 10 V | 2 | ||
| Reverse Recovery Time | trr | 185 | ns | IS =20A, VGS = 0 V, diF/dt = 100 A/μs | 2 |
CAD (KiCad official)
- Symbol:
TSP40N20M - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
tsp40n20m-etched.step/tsp40n20m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tsp40n20m.step/tsp40n20m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Truesemi datasheet (6 pp, sha256
f0640dd3a349b0e8, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TSP40N20M
**Truesemi** · MOSFETs · TO-220
TSP40N20M from Truesemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS=10V for the stated RDS(on) (max 65mΩ at ID=20A), absolute maximum gate-source voltage ±30V. |
| 2 | D | passive | Drain; 200V maximum drain-source voltage, 40A continuous drain current at TC=25℃ and 160A pulsed. |
| 3 | S | passive | Source; body diode continuous forward current 40A and pulsed 160A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Truesemi |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 200 | | | V | VGS = 0 V, ID = 250 uA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | uA | VDS = 200 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 100 | uA | VDS = 200 V, TJ= 125℃ | 2 |
| Gate-Body Leakage Current, Forward | IGSSF | | | 100 | nA | VGS = 20 V, VDS = 0 V | 2 |
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | | | nA | VGS =- 20 V, VDS = 0 V | 2 |
| Gate Threshold Voltage | VGS | 2 | | 4 | V | VDS = VGS, ID = 250 uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 50 | 65 | mΩ | VGS = 10 V, ID = 20A | 2 |
| Continuous Source-Drain Diode Forward Current | IS | | | 40 | A | | 2 |
| Pulsed Source-Drain Diode Forward Current | ISM | | | 160 | A | | 2 |
| Source-Drain Diode Forward Voltage | VSD | | | 1.4 | V | IS = 40A, VGS = 0 V | 2 |
| Drain-Source Voltage | VDSS | | | 200 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGS | -30 | | 30 | V | TC=25℃ | 1 |
| Drain Current | ID | | | 40 | A | TC = 25℃ | 1 |
| Drain Current | ID | | | 25.3 | A | TC = 100℃ | 1 |
| Pulsed Drain Current | IDM | | | 160 | A | Note 1 | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 1066 | mJ | Note 2 | 1 |
| Repetitive avalanche current | IAR | | | 40 | A | Note 1 | 1 |
| Repetitive Avalanche Energy | EAR | | | 5.8 | mJ | Note 1 | 1 |
| Power Dissipation | PD | | | 160 | W | TC=25℃ | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | | 1 | | V/℃ | ID = 250 uA, Referenced to 25℃ | 2 |
| Input Capacitance | Ciss | | 2684 | | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 |
| Output Capacitance | Coss | | 382 | | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 50 | | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 |
| Total Gate Charge | Qg | | 62 | | nC | VDS = 100 V, ID = 20A, VGS = 10 V | 2 |
| Reverse Recovery Time | trr | | 185 | | ns | IS =20A, VGS = 0 V, diF/dt = 100 A/μs | 2 |
## CAD (KiCad official)
- Symbol: `TSP40N20M`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `tsp40n20m-etched.step` / `tsp40n20m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tsp40n20m.step` / `tsp40n20m.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Truesemi datasheet](docs/tsp40n20m-datasheet.pdf) (6 pp, sha256 `f0640dd3a349b0e8`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tsp40n20m-datasheet.pdf)