# TSM650P03CX RFG

**Taiwan Semiconductor** · MOSFETs · SOT-23

TSM650P03CX RFG from Taiwan Semiconductor, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET, rated for a gate-source voltage VGS of ±12 V (absolute maximum ratings). |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the integral reverse diode is rated for a maximum continuous forward current IS of -4.1 A. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET, rated for a drain-source voltage VDS of -30 V and a continuous drain current ID of -4.1 A at TC = 25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Taiwan Semiconductor |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current | ID | -4.1 |  |  | A | TC = 25°C | 1 |
| Continuous Drain Current | ID | -2.6 |  |  | A | TC = 100°C | 1 |
| Pulsed Drain Current | IDM | -16.4 |  |  | A | Note 1: pulse width limited by safe operating area | 1 |
| Power Dissipation | PD |  |  | 1.56 | W | TC = 25℃ | 1 |
| Operating Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance - Junction to Ambient | RӨJA |  |  | 80 | °C/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | VGS = 0V, ID = -250µA | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 55 | 65 | mΩ | VGS = -10V, ID = -4A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 65 | 75 | mΩ | VGS = -4.5V, ID = -3A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 85 | 100 | mΩ | VGS = -2.5V, ID = -2A | 2 |
| Gate Threshold Voltage | VGS(TH) | -0.4 | -0.7 | -0.9 | V | VDS = VGS, ID = -250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = -30V, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -10 | µA | VDS = -24V, TJ = 125°C | 2 |
| Gate Body Leakage | IGSS | -100 |  | 100 | nA | VGS = ±12V, VDS = 0V | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | -4.1 | A | Integral reverse diode in the MOSFET | 2 |
| Maximum Pulse Drain-Source Diode Forward Current | ISM |  |  | -16.4 | A |  | 2 |
| Diode-Source Forward Voltage | VSD |  |  | -1 | V | VGS = 0V, IS = -1A | 2 |

## CAD (KiCad official)

- Symbol: `TSM650P03CX RFG`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `tsm650p03cx-rfg-etched.step` / `tsm650p03cx-rfg-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tsm650p03cx-rfg.step` / `tsm650p03cx-rfg.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Taiwan Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588904521481801728) (5 pp, sha256 `12f4625e0380beb5`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tsm650p03cx-rfg-datasheet.pdf)