TSM4415CS RL-VB

{
  "slug": "tsm4415cs-rl-vb",
  "version": "0.1.0",
  "type": "component",
  "description": "VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "tags": [
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    "tsm4415cs rl-vb",
    "factory-2.0.0",
    "extractor-text"
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  "dependencies": {},
  "hero": {
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    "path": "docs/hero.png"
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    "tsm4415cs-rl-vb.glb",
    "tsm4415cs-rl-vb.step",
    "tsm4415cs-rl-vb.lbr",
    "docs/hero.png",
    "docs/tsm4415cs-rl-vb-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
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    "tsm4415cs-rl-vb-hero.overlay.json",
    "tsm4415cs-rl-vb-etched.glb"
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  "component": {
    "mpn": "TSM4415CS RL-VB",
    "manufacturer": "VBsemi Elec",
    "package": "SO-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/8ad89c670c95a2d17becee5634e33818.pdf",
    "parts": {
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      "footprint": "tsm4415cs-rl-vb.kicad_mod",
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      "model_3d_plain": "tsm4415cs-rl-vb-etched.glb",
      "model_3d_step": "tsm4415cs-rl-vb-etched.step",
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      "lbr": "tsm4415cs-rl-vb.lbr"
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    "distributor_links": {
      "lcsc": "C5456614"
    },
    "distributor_check": {
      "checked_at": "2026-10-26T18:34:57Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
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    },
    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source of the P-channel MOSFET; continuous source current (diode conduction) is -2.3 A (10 s) / -1.1 A (steady state)."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source of the P-channel MOSFET, tied to the same source as pins 1 and 3."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source of the P-channel MOSFET, tied to the same source as pins 1 and 2."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate of the P-channel MOSFET; VGS maximum ±20 V with threshold of -0.7 to -2.0 V at ID = -250 µA."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, VDS -30 V max, tied to pins 6, 7 and 8."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, tied to pins 5, 7 and 8."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, tied to pins 5, 6 and 8."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET with continuous drain current of -5.8 A (10 s) / -4.1 A (steady state) at TA = 25 °C."
      }
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        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
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        "at": "2026-10-26T18:34:32"
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        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
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        "refuses_to_fabricate": true
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}