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TSM2N7002KDCU6 RF-VB

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VBsemi Elec MOSFETs, SC70-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TSM2N7002KDCU6 RF-VB

VBsemi Elec · MOSFETs · SC70-6

TSM2N7002KDCU6 RF-VB from VBsemi Elec, in a SC70-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1; the datasheet gives VDS of 60 V and continuous ID of 350 mA at TA = 25 °C for each channel.
2 G1 input Gate of MOSFET 1, with a gate-source voltage limit of ±20 V and a typical threshold of 2 V.
3 D2 passive Drain of N-channel MOSFET 2, rated 60 V drain-source with 350 mA continuous current at TA = 25 °C.
4 S2 passive Source of N-channel MOSFET 2; the datasheet gives VDS of 60 V and continuous ID of 350 mA at TA = 25 °C for each channel.
5 G2 input Gate of MOSFET 2, with a gate-source voltage limit of ±20 V and a typical threshold of 2 V.
6 D1 passive Drain of N-channel MOSFET 1, rated 60 V drain-source with 350 mA continuous current at TA = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SC70-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 350 mA TJ = 150 °C, TA = 25 °C 1
Continuous Drain Current ID 230 mA TA = 100 °C 1
Pulsed Drain Current IDM 900 mA Pulse width limited by maximum junction temperature (note a) 1
Power Dissipation PD 0.35 W TA = 25 °C 1
Power Dissipation PD 0.14 W TA = 100 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 350 °C/W Surface mounted on FR4 board (note b) 1
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 10 µA 2
Gate-Body Leakage IGSS -10 10 µA VDS = 0 V, VGS = ±20 V 2
Gate-Body Leakage IGSS 1 µA VDS = 0 V, VGS = ±15 V 2
Gate-Body Leakage IGSS -150 150 nA VDS = 0 V, VGS = ±10 V 2
Gate-Body Leakage IGSS -1000 1000 nA VDS = 0 V, VGS = ±10 V, TJ = 85 °C 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±5 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 500 µA VDS = 60 V, VGS = 0 V, TJ = 125 °C 2
On-State Drain Current ID(on) 800 mA VGS = 10 V, VDS = 7.5 V 2
On-State Drain Current ID(on) 500 mA VGS = 4.5 V, VDS = 10 V 2
Drain-Source On-Resistance RDS(on) 1.8 Ω VGS = 10 V, ID = 500 mA 2
Drain-Source On-Resistance RDS(on) 3 Ω VGS = 4.5 V, ID = 200 mA 2
Forward Transconductance gfs 100 mS VDS = 10 V, ID = 200 mA 2
Diode Forward Voltage VSD 1.3 V IS = 200 mA, VGS = 0 V 2
Total Gate Charge Qg 0.6 0.8 nC VDS = 10 V, VGS = 4.5 V, ID ≅ 250 mA 2

CAD (KiCad official)

  • Symbol: TSM2N7002KDCU6 RF-VB
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SC70-6 (KiCad packages3D, STEP)
  • 3D model files: tsm2n7002kdcu6-rf-vb-etched.step / tsm2n7002kdcu6-rf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tsm2n7002kdcu6-rf-vb.step / tsm2n7002kdcu6-rf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (6 pp, sha256 7ba7690373e29355, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF