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TSF840MR

Public Made by Adom

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Truesemi MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TSF840MR

Truesemi · MOSFETs · TO-220F-3

TSF840MR from Truesemi, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±30 V with threshold of 2.0 to 4.0 V at ID = 250 uA.
2 D passive Drain; drain-source voltage rated 500 V with continuous drain current of 9.0 A at TC = 25℃.
3 S passive Source; source-drain diode continuous forward current is 9.0 A maximum.

Key specifications

Parameter Value
Manufacturer Truesemi
Package TO-220F-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -30 30 V 1
Drain-Source Voltage VDSS 500 V 1
Drain Current ID 9 A TC = 25℃ 1
Drain Current ID 5.4 A TC = 100℃ 1
Pulsed Drain Current IDM 36 A Note 1 1
Single Pulsed Avalanche Energy EAS 360 mJ Note 2 1
Repetitive Avalanche Energy EAR 13.9 mJ Note 1 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 3 1
Power Dissipation PD 45.5 W TC = 25℃ 1
Power Dissipation Derating PD 0.36 W/℃ Derate above 25℃ 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Maximum Lead Temperature for Soldering TL 300 ℃ 1/8 in from case for 5 s 1
Thermal Resistance, Junction-to-Case RθJC 2.75 ℃/W 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 500 V VGS = 0 V, ID = 250 uA 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 uA 2
Static Drain-Source On-Resistance RDS(ON) 0.68 0.8 Ω VGS = 10 V, ID = 4.5 A 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS = 500 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 uA VDS = 400 V, TJ = 125℃ 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -30 V, VDS = 0 V 2
Continuous Source-Drain Diode Forward Current IS 9 A 2
Pulsed Source-Drain Diode Forward Current ISM 36 A 2
Source-Drain Diode Forward Voltage VSD 1.4 V IS = 9.0 A, VGS = 0 V 2
Reverse Recovery Time trr 340 ns IS = 9.0A, VGS = 0 V, diF/dt = 100 A/μs (Note 4) 2
Reverse Recovery Charge Qrr 3 uC 2
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 0.6 V/℃ ID = 250 uA, referenced to 25℃ 2
Input Capacitance Ciss 1050 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Output Capacitance Coss 130 pF 2
Reverse Transfer Capacitance Crss 25 pF 2
Turn-On Time td(on) 20 ns VDS = 250 V, ID = 9.0A, RG = 25 Ω (Note 4,5) 2
Turn-On Rise Time tr 70 ns 2
Turn-Off Delay Time td(off) 90 ns 2
Turn-Off Fall Time tf 60 ns 2
Total Gate Charge Qg 30 nC VDS = 400 V, ID = 9.0A, VGS = 10 V (Note 4,5) 2
Gate-Source Charge Qgs 4 nC 2
Gate-Drain Charge Qgd 15 nC 2

CAD (KiCad official)

  • Symbol: TSF840MR
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Truesemi datasheet (7 pp, sha256 4bb1042bfd364fb7, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF