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TSF840MD

Public Made by Adom

by adom

Truesemi MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TSF840MD

Truesemi · MOSFETs · TO-220F-3

TSF840MD from Truesemi, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the MOSFET with a gate-source voltage limit of ±30 V and a threshold of 2.0 to 4.0 V.
2 D passive Drain; 500 V maximum drain-source voltage and 8.0 A continuous drain current at TC = 25℃ (limited by junction temperature).
3 S passive Source; the body diode conducts from source to drain with a continuous forward current of 8.0 A.

Key specifications

Parameter Value
Manufacturer Truesemi
Package TO-220F-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 500 V 1
Gate-Source Voltage VGS -30 30 V 1
Drain Current ID 8 A TC = 25℃; drain current limited by maximum junction temperature 1
Drain Current ID 5 A TC = 100℃ 1
Pulsed Drain Current IDM 32 A Note 1 1
Single Pulsed Avalanche Energy EAS 360 mJ Note 2 1
Repetitive Avalanche Energy EAR 13.9 mJ Note 1 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 3 1
Power Dissipation PD 45.5 W TC = 25℃ 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Maximum lead temperature for soldering purposes TL 300 ℃ 1/8 in from case for 5 seconds 1
Thermal Resistance, Junction-to-Case RθJC 2.75 ℃/W 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 ℃/W 1
Continuous Source-Drain Diode Forward Current IS 8 A 2
Pulsed Source-Drain Diode Forward Current ISM 36 A 2
Source-Drain Diode Forward Voltage VSD 1.4 V IS = 9.0 A, VGS = 0 V 2
Drain-Source Breakdown Voltage BVDSS 500 V VGS = 0 V, ID = 250 uA 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS = 500 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 uA VDS = 400 V, TJ = 125℃ 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -30 V, VDS = 0 V 2
Gate Threshold Voltage VGS 2 4 V VDS = VGS, ID = 250 uA 2
Static Drain-Source On-Resistance RDS(ON) 0.88 0.95 Ω VGS = 10 V, ID = 4.5 A 2

CAD (KiCad official)

  • Symbol: TSF840MD
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Truesemi datasheet (6 pp, sha256 ab8ad807527b0b4b, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF