component
TSF20N50MR
Public Made by Adomby adom
Truesemi MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TSF20N50MR
Truesemi · MOSFETs · TO-220F-3
TSF20N50MR from Truesemi, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated at ±30 V maximum and RDS(on) specified at VGS = 10 V. |
| 2 | D | passive | Drain; rated for 500 V VDSS and 20 A continuous drain current at TC = 25℃ (limited by junction temperature). |
| 3 | S | passive | Source; connects to the body diode anode, with continuous source-drain diode current of 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Truesemi |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 500 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | TC=25℃ | 1 | |
| Drain Current | ID | 20 | A | TC = 25℃ | 1 | ||
| Drain Current | ID | 10.8 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | 80 | A | Note 1 | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 945 | mJ | Note 2 | 1 | ||
| Repetitive Avalanche Energy | EAR | 23.5 | mJ | Note 1 | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 3 | 1 | ||
| Power Dissipation | PD | 38.5 | W | TC = 25℃ | 1 | ||
| Power Dissipation Derating | PD | 0.3 | W/℃ | Derate above 25℃ | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | ℃ | 1/8" from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 3.3 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | ℃/W | 1 | |||
| Continuous Source-Drain Diode Forward Current | IS | 20 | A | 2 | |||
| Pulsed Source-Drain Diode Forward Current | ISM | 72 | A | 2 | |||
| Source-Drain Diode Forward Voltage | VSD | 1.4 | V | IS = 20.0A, VGS = 0 V | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | VGS = 0 V, ID = 250 uA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS = 500 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | uA | VDS = 400 V, TC = 125℃ | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 30 V, VDS = 0 V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS =- 30 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS | 2 | 4 | V | VDS = VGS, ID = 250 uA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.246 | 0.3 | Ω | VGS = 10 V, ID = 10.0A | 2 | |
| Reverse Recovery Time | trr | 500 | ns | IS =20.0A, VGS = 0 V, diF/dt = 100 A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 5.4 | uC | IS =20.0A, VGS = 0 V, diF/dt = 100 A/μs | 2 | ||
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | 0.5 | V/℃ | ID = 250 uA, Referenced to 25℃ | 2 | ||
| Input Capacitance | Ciss | 3700 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 250 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 34 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 | ||
| Turn-On Time | td(on) | 60 | ns | VDS = 250 V, ID = 20.0A, RG = 25 Ω (Note 4) | 2 | ||
| Turn-On Rise Time | tr | 160 | ns | VDS = 250 V, ID = 20.0A, RG = 25 Ω (Note 4) | 2 | ||
| Turn-Off Delay Time | td(off) | 84 | ns | VDS = 250 V, ID = 20.0A, RG = 25 Ω (Note 4) | 2 | ||
| Turn-Off Fall Time | tf | 84 | ns | VDS = 250 V, ID = 20.0A, RG = 25 Ω (Note 4) | 2 | ||
| Total Gate Charge | Qg | 42 | nC | VDS = 400 V, ID = 20.0A, VGS = 10 V (Note 4) | 2 | ||
| Gate-Source Charge | Qgs | 12 | nC | VDS = 400 V, ID = 20.0A, VGS = 10 V (Note 4) | 2 | ||
| Gate-Drain Charge | Qgd | 18 | nC | VDS = 400 V, ID = 20.0A, VGS = 10 V (Note 4) | 2 | ||
| Forward Transconductance | gFS | 25 | S | VDS = 20V, ID = 10.0A | 2 |
CAD (KiCad official)
- Symbol:
TSF20N50MR - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Truesemi datasheet (6 pp, sha256
d508d2ecd1473920, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TSF20N50MR
**Truesemi** · MOSFETs · TO-220F-3
TSF20N50MR from Truesemi, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated at ±30 V maximum and RDS(on) specified at VGS = 10 V. |
| 2 | D | passive | Drain; rated for 500 V VDSS and 20 A continuous drain current at TC = 25℃ (limited by junction temperature). |
| 3 | S | passive | Source; connects to the body diode anode, with continuous source-drain diode current of 20 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Truesemi |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 500 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGS | -30 | | 30 | V | TC=25℃ | 1 |
| Drain Current | ID | | | 20 | A | TC = 25℃ | 1 |
| Drain Current | ID | | | 10.8 | A | TC = 100℃ | 1 |
| Pulsed Drain Current | IDM | | | 80 | A | Note 1 | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 945 | mJ | Note 2 | 1 |
| Repetitive Avalanche Energy | EAR | | | 23.5 | mJ | Note 1 | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 4.5 | V/ns | Note 3 | 1 |
| Power Dissipation | PD | | | 38.5 | W | TC = 25℃ | 1 |
| Power Dissipation Derating | PD | | | 0.3 | W/℃ | Derate above 25℃ | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |
| Maximum lead temperature for soldering | TL | | | 300 | ℃ | 1/8" from case for 5 seconds | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | | 3.3 | ℃/W | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 62.5 | ℃/W | | 1 |
| Continuous Source-Drain Diode Forward Current | IS | | | 20 | A | | 2 |
| Pulsed Source-Drain Diode Forward Current | ISM | | | 72 | A | | 2 |
| Source-Drain Diode Forward Voltage | VSD | | | 1.4 | V | IS = 20.0A, VGS = 0 V | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 500 | | | V | VGS = 0 V, ID = 250 uA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VDS = 500 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | uA | VDS = 400 V, TC = 125℃ | 2 |
| Gate-Body Leakage Current, Forward | IGSSF | | | 100 | nA | VGS = 30 V, VDS = 0 V | 2 |
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | | | nA | VGS =- 30 V, VDS = 0 V | 2 |
| Gate Threshold Voltage | VGS | 2 | | 4 | V | VDS = VGS, ID = 250 uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 0.246 | 0.3 | Ω | VGS = 10 V, ID = 10.0A | 2 |
| Reverse Recovery Time | trr | | 500 | | ns | IS =20.0A, VGS = 0 V, diF/dt = 100 A/μs | 2 |
| Reverse Recovery Charge | Qrr | | 5.4 | | uC | IS =20.0A, VGS = 0 V, diF/dt = 100 A/μs | 2 |
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | | 0.5 | | V/℃ | ID = 250 uA, Referenced to 25℃ | 2 |
| Input Capacitance | Ciss | | 3700 | | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 |
| Output Capacitance | Coss | | 250 | | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 34 | | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 |
| Turn-On Time | td(on) | | 60 | | ns | VDS = 250 V, ID = 20.0A, RG = 25 Ω (Note 4) | 2 |
| Turn-On Rise Time | tr | | 160 | | ns | VDS = 250 V, ID = 20.0A, RG = 25 Ω (Note 4) | 2 |
| Turn-Off Delay Time | td(off) | | 84 | | ns | VDS = 250 V, ID = 20.0A, RG = 25 Ω (Note 4) | 2 |
| Turn-Off Fall Time | tf | | 84 | | ns | VDS = 250 V, ID = 20.0A, RG = 25 Ω (Note 4) | 2 |
| Total Gate Charge | Qg | | 42 | | nC | VDS = 400 V, ID = 20.0A, VGS = 10 V (Note 4) | 2 |
| Gate-Source Charge | Qgs | | 12 | | nC | VDS = 400 V, ID = 20.0A, VGS = 10 V (Note 4) | 2 |
| Gate-Drain Charge | Qgd | | 18 | | nC | VDS = 400 V, ID = 20.0A, VGS = 10 V (Note 4) | 2 |
| Forward Transconductance | gFS | | 25 | | S | VDS = 20V, ID = 10.0A | 2 |
## CAD (KiCad official)
- Symbol: `TSF20N50MR`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F-3 (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Truesemi datasheet](docs/tsf20n50mr-datasheet.pdf) (6 pp, sha256 `d508d2ecd1473920`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tsf20n50mr-datasheet.pdf)