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TSF16N60MR

Public Made by Adom

by adom

Truesemi MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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TSF16N60MR

Truesemi · MOSFETs · TO-220F-3

TSF16N60MR from Truesemi, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±30 V, with a threshold of 3 to 5 V at VDS = VGS, ID = 250 uA.
2 D passive Drain; drain-source voltage rated 600 V, with continuous drain current of 16 A at TC = 25℃ (limited by junction temperature) and 64 A pulsed.
3 S passive Source; connects to the body diode anode, which is rated for 16 A continuous forward current with a maximum VSD of 1.4 V.

Key specifications

Parameter Value
Manufacturer Truesemi
Package TO-220F-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 600 V TC=25℃ 1
Gate-Source Voltage VGS -30 30 V TC=25℃ 1
Drain Current ID 16 A TC = 25℃ 1
Drain Current ID 10.1 A TC = 100℃ 1
Pulsed Drain Current IDM 64 A TC=25℃ 1
Single Pulsed Avalanche Energy EAS 698 mJ Note 2 1
Repetitive Avalanche Energy EAR 4 mJ Note 1 1
Repetitive avalanche current IAR 16 A Note 1 1
Power Dissipation PD 40 W TC = 25℃ 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 3.13 ℃/W 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 ℃/W 1
Continuous Source-Drain Diode Forward Current IS 16 A 2
Pulsed Source-Drain Diode Forward Current ISM 64 A 2
Source-Drain Diode Forward Voltage VSD 1.4 V IS = 16A, VGS = 0 V 2
Drain-Source Breakdown Voltage BVDSS 600 V VGS = 0 V, ID = 250 uA 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS = 600 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 100 uA VDS = 600 V, TC =125℃ 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS =- 30 V, VDS = 0 V 2
Gate Threshold Voltage VGS 3 5 V VDS = VGS, ID = 250 uA 2
Static Drain-Source On-Resistance RDS(ON) 0.38 0.47 Ω VGS = 10 V, ID = 8A 2
Total Gate Charge Qg 50 55 nC VDS = 480 V, ID = 16A, VGS = 10 V 2
Reverse Recovery Time trr 484 ns IS =16A, VGS = 0 V, diF/dt = 100 A/μs 2
Reverse Recovery Charge Qrr 1.62 uC IS =16A, VGS = 0 V, diF/dt = 100 A/μs 2
Input Capacitance Ciss 3325 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Output Capacitance Coss 225 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 22 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Turn-On Time td(on) 175 ns VDS = 300 V, ID = 16A, RG = 25 Ω 2
Turn-On Rise Time tr 121 ns VDS = 300 V, ID = 16A, RG = 25 Ω 2
Turn-Off Delay Time td(off) 373 ns VDS = 300 V, ID = 16A, RG = 25 Ω 2
Turn-Off Fall Time tf 64 ns VDS = 300 V, ID = 16A, RG = 25 Ω 2
Gate-Source Charge Qgs 20 nC VDS = 480 V, ID = 16A, VGS = 10 V 2
Gate-Drain Charge Qgd 10 nC VDS = 480 V, ID = 16A, VGS = 10 V 2
Forward transfer conductance gfs 11 S VDS = 10 V, ID = 8A 2

CAD (KiCad official)

  • Symbol: TSF16N60MR
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Truesemi datasheet (7 pp, sha256 7f4ed645e9f60503, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF