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TSA40N25M

Public Made by Adom

by adom

Truesemi MOSFETs, TO-3P-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TSA40N25M

Truesemi · MOSFETs · TO-3P-3

TSA40N25M from Truesemi, in a TO-3P-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the TO-3P drawing labels the left lead G, with gate-source voltage rated at ±30 V and threshold 2.0 to 4.0 V.
2 D passive Drain; the middle lead, with drain-source voltage rated at 250 V and continuous drain current of 40 A at TC=25℃.
3 S passive Source; the right lead, which is the source terminal of the N-channel MOSFET and the body diode anode.

Key specifications

Parameter Value
Manufacturer Truesemi
Package TO-3P-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 250 V TC=25℃ 1
Gate-Source Voltage VGS -30 30 V TC=25℃ 1
Drain Current ID 40 A TC = 25℃ 1
Drain Current ID 25.3 A TC = 100℃ 1
Pulsed Drain Current IDM 160 A Note 1 1
Single Pulsed Avalanche Energy EAS 1000 mJ Note 2 1
Repetitive avalanche current IAR 40 A Note 1 1
Repetitive Avalanche Energy EAR 5.8 mJ Note 1 1
Power Dissipation PD 260 W TC=25℃ 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Continuous Source-Drain Diode Forward Current IS 40 A 2
Pulsed Source-Drain Diode Forward Current ISM 160 A 2
Source-Drain Diode Forward Voltage VSD 1.4 V IS = 40A, VGS = 0 V 2
Drain-Source Breakdown Voltage BVDSS 250 V VGS = 0 V, ID = 250 uA 2
Zero Gate Voltage Drain Current IDSS 10 uA VDS = 250 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 100 uA VDS = 250 V, TJ= 125℃ 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 20 V, VDS = 0 V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -20 V, VDS = 0 V 2
Gate Threshold Voltage VGS 2 4 V VDS = VGS, ID = 250 uA 2
Static Drain-Source On-Resistance RDS(ON) 70 85 mΩ VGS = 10 V, ID = 20A 2
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 1 V/℃ ID = 250 uA, Referenced to 25℃ 2
Reverse Recovery Time trr 167 ns IS =20A, VGS = 0 V, diF/dt = 100 A/μs 2
Reverse Recovery Charge Qrr 1.25 uC IS =20A, VGS = 0 V, diF/dt = 100 A/μs 2
Input Capacitance Ciss 2704 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Output Capacitance Coss 325 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 40 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Turn-On Time td(on) 42 ns VDS = 125V, ID = 20A, RG = 25 Ω 2
Turn-On Rise Time tr 26 ns VDS = 125V, ID = 20A, RG = 25 Ω 2
Turn-Off Delay Time td(off) 155 ns VDS = 125V, ID = 20A, RG = 25 Ω 2
Turn-Off Fall Time tf 32 ns VDS = 125V, ID = 20A, RG = 25 Ω 2
Total Gate Charge Qg 62 nC VDS = 125 V, ID = 20A, VGS = 10 V 2
Gate-Source Charge Qgs 16 nC VDS = 125 V, ID = 20A, VGS = 10 V 2
Gate-Drain Charge Qgd 18 nC VDS = 125 V, ID = 20A, VGS = 10 V 2

CAD (KiCad official)

  • Symbol: TSA40N25M
  • Footprint: Package_TO_SOT_THT:TO-3P-3_Vertical
  • 3D model: TO-3P-3 (KiCad packages3D, STEP)
  • 3D model files: tsa40n25m-etched.step / tsa40n25m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tsa40n25m.step / tsa40n25m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Truesemi datasheet (6 pp, sha256 f776c749c1ab4850, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF