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Contents

README

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TS921IDT

STMicroelectronics · Operational Amplifier · SO-8

TS921IDT from STMicroelectronics, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 N.C. unconnected No internal connection.
2 Inverting input input Inverting input of the amplifier; differential input voltage must not exceed ±1 V (add a series resistor limiting input current to ±1 mA otherwise).
3 Non-inverting input input Non-inverting input of the amplifier; rail-to-rail common mode range of VDD - 0.2 V to VCC + 0.2 V.
4 VDD power_in Negative supply terminal (ground in single-supply use); with VCC the supply range is 2.7 V to 12 V.
5 N.C. unconnected No internal connection.
6 Output output Rail-to-rail amplifier output with about 80 mA short-circuit current, no internal short-circuit protection, stable for capacitive loads up to 500 pF.
7 VCC+ power_in Positive supply terminal, 2.7 V to 12 V operating and 14 V absolute maximum.
8 N.C. unconnected No internal connection.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package SO-8
Category Amplifiers/Comparators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input offset voltage (25 °C limit) Vio 3 mV VCC = 3 V, Tamb = 25 °C 4
Input offset voltage (over temperature) Vio 5 mV VCC = 3 V, at Tmin. ≤ Tamb ≤ Tmax 4
Input offset voltage drift ΔVio 2 μV/°C VCC = 3 V 4
Input offset current Iio 1 30 nA VCC = 3 V, Vout = 1.5 V 4
Input bias current Iib 15 100 nA VCC = 3 V, Vout = 1.5 V 4
High level output voltage VOH 2.87 V VCC = 3 V, RL = 600 Ω 4
High level output voltage VOH 2.63 V VCC = 3 V, RL = 32 Ω 4
Low level output voltage VOL 180 mV VCC = 3 V, RL = 600 Ω 4
Low level output voltage VOL 100 mV VCC = 3 V, RL = 32 Ω 4
Large signal voltage gain Avd 35 V/mV VCC = 3 V, Vout = 2 Vpk-pk, RL = 600 Ω 4
Large signal voltage gain Avd 16 V/mV VCC = 3 V, Vout = 2 Vpk-pk, RL = 32 Ω 4
Gain bandwidth product GBP 4 MHz VCC = 3 V, RL = 600 Ω 4
Supply current ICC 1 1.5 mA VCC = 3 V, No load, Vout = VCC/2 4
Common mode rejection ratio CMR 60 80 dB VCC = 3 V 4
Supply voltage rejection ratio SVR 60 80 dB VCC = 2.7 to 3.3 V 4
Output short-circuit current Io 50 80 mA VCC = 3 V 4
Slew rate SR 0.7 1.3 V/μs VCC = 3 V 4
Phase margin at unit gain Pm 68 Degrees VCC = 3 V, RL = 600 Ω, CL = 100 pF 4
Gain margin GM 12 dB VCC = 3 V, RL = 600 Ω, CL = 100 pF 4
Equivalent input noise voltage en 9 nV/√Hz VCC = 3 V, f = 1 kHz 4
Total harmonic distortion THD 0.005 % VCC = 3 V, Vout = 2 Vpk-pk, f = 1 kHz, Av = 1, RL = 600 Ω 4
Input offset voltage (25 °C limit) Vio 3 mV VCC = 5 V, Tamb = 25 °C 5
Input offset voltage (over temperature) Vio 5 mV VCC = 5 V, at Tmin. ≤ Tamb ≤ Tmax 5
Input offset voltage drift ΔVio 2 μV/°C VCC = 5 V 5
Input offset current Iio 1 30 nA VCC = 5 V, Vout = 1.5 V 5
Input bias current Iib 15 100 nA VCC = 5 V, Vout = 1.5 V 5
High level output voltage VOH 4.85 V VCC = 5 V, RL = 600 Ω 5
High level output voltage VOH 4.4 V VCC = 5 V, RL = 32 Ω 5
Low level output voltage VOL 300 mV VCC = 5 V, RL = 600 Ω 5
Low level output voltage VOL 120 mV VCC = 5 V, RL = 32 Ω 5
Large signal voltage gain Avd 35 V/mV VCC = 5 V, Vout = 2 Vpk-pk, RL = 600 Ω 5
Large signal voltage gain Avd 16 V/mV VCC = 5 V, Vout = 2 Vpk-pk, RL = 32 Ω 5
Gain bandwidth product GBP 4 MHz VCC = 5 V, RL = 600 Ω 5
Supply current ICC 1 1.5 mA VCC = 5 V, No load, Vout = VCC/2 5
Common mode rejection ratio CMR 60 80 dB VCC = 5 V 5
Supply voltage rejection ratio SVR 60 80 dB VCC = 4.5 to 5.5 V 5
Output short-circuit current Io 50 80 mA VCC = 5 V 5
Slew rate SR 0.7 1.3 V/μs VCC = 5 V 5
Phase margin at unit gain Pm 68 Degrees VCC = 5 V, RL = 600 Ω, CL = 100 pF 5
Gain margin GM 12 dB VCC = 5 V, RL = 600 Ω, CL = 100 pF 5
Equivalent input noise voltage en 9 nV/√Hz VCC = 5 V, f = 1 kHz 5
Total harmonic distortion THD 0.005 % VCC = 5 V, Vout = 2 Vpk-pk, f = 1 kHz, Av = 1, RL = 600 Ω 5
Supply voltage VCC 14 V 3
Differential input voltage Vid -1 1 V Differential voltage; if Vid > ±1 V, maximum input current must not exceed ±1 mA 3
Storage temperature Tstg -65 150 °C 3
Maximum junction temperature Tj 150 °C 3
Thermal resistance junction-to-ambient (SO-8) Rthja 125 °C/W SO-8 package 3
Thermal resistance junction-to-case (SO-8) Rthjc 40 °C/W SO-8 package 3
ESD human body model HBM 1.5 kV Human body model (100 pF through 1.5 kΩ) 3
ESD machine model MM 100 V Machine model (200 pF, internal resistor < 5 Ω) 3
ESD charged device model CDM 1.5 kV Charged device model 3
Latch-up immunity 200 mA 3
Soldering temperature 250 °C 10 sec., standard package 3
Soldering temperature 260 °C 10 sec., lead-free package 3
Supply voltage VCC 2.7 12 V 3
Operating free air temperature range Toper -40 125 °C 3

CAD (KiCad official)

  • Symbol: TS921IDT
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: ts921idt-etched.step / ts921idt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ts921idt.step / ts921idt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (16 pp, sha256 14666f98057d4f23, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF