component
TS820-600B-TR
Public Made by Adomby adom
STMicroelectronics Thyristors (SCR)/Modules, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ts820-600b-tr: specified limits as data (metadata.characteristics, 21 rows from the datasheet)
2 files changed
+287
README.md+28@@ -21,6 +21,34 @@ TS820-600B-TR from STMicroelectronics, in a DPAK. Pinout and pin descriptions ex | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Tolerance-free limit: IGT gate trigger current | IGT | | | 200 | µA | VD = 12 V, RL = 140 Ω | 2 |+| Gate trigger voltage | VGT | | | 0.8 | V | | 2 |+| Reverse gate voltage (breakdown) | VRG | 8 | | | V | IRG = 10 µA | 2 |+| Gate non-trigger voltage | VGD | 0.1 | | | V | VD = VDRM, RL = 3.3 kΩ, RGK = 220 Ω, Tj = 125 °C | 2 |+| Holding current | IH | | | 5 | mA | IT = 50 mA, RGK = 1 kΩ | 2 |+| Latching current | IL | | | 6 | mA | IG = 1 mA, RGK = 1 kΩ | 2 |+| Critical rate of rise of off-state voltage | dV/dt | 5 | | | V/µs | VD = 65% VDRM, RGK = 220 Ω, Tj = 125 °C | 2 |+| On-state voltage | VTM | | | 1.6 | V | ITM = 16 A, tp = 380 µs, Tj = 25 °C | 2 |+| Threshold voltage | Vt0 | | | 0.85 | V | Tj = 125 °C | 2 |+| Dynamic resistance | Rd | | | 46 | mΩ | Tj = 125 °C | 2 |+| Repetitive peak off-state current | IDRM | | | 5 | µA | VDRM = VRRM, RGK = 220 Ω, Tj = 25 °C | 2 |+| Repetitive peak reverse current | IRRM | | | 1 | mA | VDRM = VRRM, RGK = 220 Ω, Tj = 125 °C | 2 |+| RMS on-state current | IT(RMS) | | | 8 | A | 180° conduction angle, TC = 110 °C | 2 |+| Average on-state current | IT(AV) | | | 5 | A | 180° conduction angle, TC = 110 °C | 2 |+| Critical rate of rise of on-state current | dI/dt | | | 50 | A/µs | IG = 2 x IGT, tr ≤ 100 ns, F = 60 Hz, Tj = 125 °C | 2 |+| Peak gate current | IGM | | | 4 | A | tp = 20 µs, Tj = 125 °C | 2 |+| Average gate power dissipation | PG(AV) | | | 1 | W | Tj = 125 °C | 2 |+| Storage junction temperature range | Tstg | -40 | | 150 | °C | | 2 |+| Operating junction temperature range | Tj | -40 | | 125 | °C | | 2 |+| Junction to case (DC) | Rth(j-c) | | | 1.3 | °C/W | DPAK (IPAK / DPAK / TO-220AB), DC | 3 |+| Junction to ambient | Rth(j-a) | | | 70 | °C/W | DPAK, S = 0.5 cm² copper surface under tab | 3 |+ ## CAD (KiCad official) - Symbol: `TS820-600B-TR`
page.json+259@@ -133,6 +133,265 @@ "Package": "DPAK", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "90a411e20256cd54",+ "rows": [+ {+ "name": "Tolerance-free limit: IGT gate trigger current",+ "symbol": "IGT",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "VD = 12 V, RL = 140 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger voltage",+ "symbol": "VGT",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.8,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse gate voltage (breakdown)",+ "symbol": "VRG",+ "kind": "electrical",+ "unit": "V",+ "min": 8,+ "typ": null,+ "max": null,+ "conditions": "IRG = 10 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate non-trigger voltage",+ "symbol": "VGD",+ "kind": "electrical",+ "unit": "V",+ "min": 0.1,+ "typ": null,+ "max": null,+ "conditions": "VD = VDRM, RL = 3.3 kΩ, RGK = 220 Ω, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Holding current",+ "symbol": "IH",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "IT = 50 mA, RGK = 1 kΩ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Latching current",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "IG = 1 mA, RGK = 1 kΩ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of off-state voltage",+ "symbol": "dV/dt",+ "kind": "electrical",+ "unit": "V/µs",+ "min": 5,+ "typ": null,+ "max": null,+ "conditions": "VD = 65% VDRM, RGK = 220 Ω, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-state voltage",+ "symbol": "VTM",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "ITM = 16 A, tp = 380 µs, Tj = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Threshold voltage",+ "symbol": "Vt0",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.85,+ "conditions": "Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Dynamic resistance",+ "symbol": "Rd",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 46,+ "conditions": "Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state current",+ "symbol": "IDRM",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDRM = VRRM, RGK = 220 Ω, Tj = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak reverse current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDRM = VRRM, RGK = 220 Ω, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "RMS on-state current",+ "symbol": "IT(RMS)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "180° conduction angle, TC = 110 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Average on-state current",+ "symbol": "IT(AV)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "180° conduction angle, TC = 110 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of on-state current",+ "symbol": "dI/dt",+ "kind": "absolute_maximum",+ "unit": "A/µs",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "IG = 2 x IGT, tr ≤ 100 ns, F = 60 Hz, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak gate current",+ "symbol": "IGM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "tp = 20 µs, Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Average gate power dissipation",+ "symbol": "PG(AV)",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage junction temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction to case (DC)",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "DPAK (IPAK / DPAK / TO-220AB), DC",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Junction to ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 70,+ "conditions": "DPAK, S = 0.5 cm² copper surface under tab",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],