component
TS0501NBX
Public Made by Adomby adom
Shenzhen JingYang ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TS0501NBX
Shenzhen JingYang · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
TS0501NBX from Shenzhen JingYang, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O_1 | passive | Bidirectional TVS I/O line 1 protected against ESD up to ±30kV (air/contact, IEC 61000-4-2), with VRWM of 5.5V between I/O_1 and I/O_2. |
| 2 | I/O_2 | passive | Bidirectional TVS I/O line 2 protected against ESD up to ±30kV (air/contact, IEC 61000-4-2), with VRWM of 5.5V between I/O_1 and I/O_2. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Working Voltage | VRWM | 5.5 | V | 2 | |||
| Reverse Leakage Current | IR | 0.1 | 1 | μA | VRWM = 5.5V, T = 25 C, between I/O_1 and I/O_2 | 2 | |
| Reverse Breakdown Voltage | VBR | 6 | V | IT = 1mA, between I/O_1 and I/O_2 | 2 | ||
| Clamping Voltage | VC | 6.5 | V | IPP = 1A, tp = 8/20μs, between I/O_1 and I/O_2 | 2 | ||
| Clamping Voltage | VC | 16 | V | IPP = 18A, tp = 8/20μs, between I/O_1 and I/O_2 | 2 | ||
| Parasitic Capacitance | CESD | 8 | 50 | pF | VR = 0V, f = 1MHz, between I/O_1 and I/O_2 | 2 | |
| Peak Pulse Current | IPP | 18 | A | 8/20μs | 2 | ||
| Peak Pulse Power | PPK | 280 | W | 8/20μs | 2 | ||
| ESD per IEC 61000-4-2 (Air) | VESD | -30 | 30 | kV | Air | 2 | |
| ESD per IEC 61000-4-2 (Contact) | VESD | -30 | 30 | kV | Contact | 2 | |
| Operating Temperature | TOPT | -55 | 150 | C | 2 | ||
| Storage Temperature | TSTG | -55 | 150 | C | 2 |
CAD (KiCad official)
- Symbol:
TS0501NBX - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
ts0501nbx-etched.step/ts0501nbx-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ts0501nbx.step/ts0501nbx.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen JingYang datasheet (4 pp, sha256
edbc5335191fa9fe, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TS0501NBX
**Shenzhen JingYang** · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
TS0501NBX from Shenzhen JingYang, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | I/O_1 | passive | Bidirectional TVS I/O line 1 protected against ESD up to ±30kV (air/contact, IEC 61000-4-2), with VRWM of 5.5V between I/O_1 and I/O_2. |
| 2 | I/O_2 | passive | Bidirectional TVS I/O line 2 protected against ESD up to ±30kV (air/contact, IEC 61000-4-2), with VRWM of 5.5V between I/O_1 and I/O_2. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen JingYang |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Working Voltage | VRWM | | | 5.5 | V | | 2 |
| Reverse Leakage Current | IR | | 0.1 | 1 | μA | VRWM = 5.5V, T = 25 C, between I/O_1 and I/O_2 | 2 |
| Reverse Breakdown Voltage | VBR | 6 | | | V | IT = 1mA, between I/O_1 and I/O_2 | 2 |
| Clamping Voltage | VC | | | 6.5 | V | IPP = 1A, tp = 8/20μs, between I/O_1 and I/O_2 | 2 |
| Clamping Voltage | VC | | | 16 | V | IPP = 18A, tp = 8/20μs, between I/O_1 and I/O_2 | 2 |
| Parasitic Capacitance | CESD | | 8 | 50 | pF | VR = 0V, f = 1MHz, between I/O_1 and I/O_2 | 2 |
| Peak Pulse Current | IPP | | | 18 | A | 8/20μs | 2 |
| Peak Pulse Power | PPK | | | 280 | W | 8/20μs | 2 |
| ESD per IEC 61000-4-2 (Air) | VESD | -30 | | 30 | kV | Air | 2 |
| ESD per IEC 61000-4-2 (Contact) | VESD | -30 | | 30 | kV | Contact | 2 |
| Operating Temperature | TOPT | -55 | | 150 | C | | 2 |
| Storage Temperature | TSTG | -55 | | 150 | C | | 2 |
## CAD (KiCad official)
- Symbol: `TS0501NBX`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `ts0501nbx-etched.step` / `ts0501nbx-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ts0501nbx.step` / `ts0501nbx.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shenzhen JingYang datasheet](docs/ts0501nbx-datasheet.pdf) (4 pp, sha256 `edbc5335191fa9fe`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ts0501nbx-datasheet.pdf)