component
TPSMB30AHE3_A
Public Made by Adomby adom
Vishay Intertech ESD And Surge Protection (TVS/ESD), SMB(DO-214AA). Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTPSMB30AHE3_A
Vishay Intertech · ESD And Surge Protection (TVS/ESD) · SMB(DO-214AA)
TPSMB30AHE3_A from Vishay Intertech, in a SMB(DO-214AA). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SMB(DO-214AA) |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Breakdown voltage (TPSMB30A) | VBR | 28.5 | 30 | 31.5 | V | IT = 1 mA; measured after IT applied for 300 µs (note 1) | 2 |
| Maximum reverse leakage at VWM | IR | 1 | µA | at VWM = 25.6 V | 2 | ||
| Maximum reverse leakage at VWM, TJ = 150 °C | ID | 5 | µA | TJ = 150 °C; at VWM = 25.6 V | 2 | ||
| Maximum peak pulse surge current | IPPM | 14.5 | A | Surge current waveform per fig. 3 and derated per fig. 2 (note 2) | 2 | ||
| Maximum clamping voltage | VC | 41.4 | V | at IPPM | 2 | ||
| Peak pulse power dissipation | PPPM | 600 | W | 10/1000 µs waveform (fig. 1) (notes 1)(2) | 1 | ||
| Peak forward surge current | IFSM | 75 | A | 8.3 ms single half sine-wave (notes 2)(3) | 1 | ||
| Maximum instantaneous forward voltage | VF | 3.5 | V | at 50 A (notes 2)(3) | 1 | ||
| Operating junction and storage temperature range | TJ, TSTG | -65 | 185 | °C | 1 | ||
| Typical temperature coefficient of VBR | αT | 0.088 | %/°C | Per note (3): VBR at TJ = VBR at 25 °C × (1 + αT × (TJ − 25)) | 2 |
CAD (KiCad official)
- Symbol:
TPSMB30AHE3_A - Footprint:
Diode_SMD:D_SMB - 3D model: SMB(DO-214AA) (KiCad packages3D, STEP)
- 3D model files:
tpsmb30ahe3-a-etched.step/tpsmb30ahe3-a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tpsmb30ahe3-a.step/tpsmb30ahe3-a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (5 pp, sha256
46356b483a7d4f56, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).