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Contents

README

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TPSI3440DV-T1-GE3

TECH PUBLIC · MOSFETs · SOT-23-6

TPSI3440DV-T1-GE3 from TECH PUBLIC, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain of the 150V N-channel MOSFET, tied internally with pins 2, 5 and 6; VDS max 150 V.
2 D passive Drain of the 150V N-channel MOSFET, tied internally with pins 1, 5 and 6; continuous drain current 1.5 A at TA=25°C.
3 G input Gate of the MOSFET; VGS max ±20 V with VGS(th) 1.5 V min to 3.5 V max.
4 S passive Source of the MOSFET; continuous body diode forward current 1.3 A at TA=25°C.
5 D passive Drain of the 150V N-channel MOSFET, tied internally with pins 1, 2 and 6; pulsed drain current 6 A.
6 D passive Drain of the 150V N-channel MOSFET, tied internally with pins 1, 2 and 5; RDS(ON) 240 mΩ typ., 320 mΩ max at VGS=10V, ID=1.5A.

Key specifications

Parameter Value
Manufacturer TECH PUBLIC
Package SOT-23-6
Category Transistors/Thyristors
Pins 6

CAD (KiCad official)

  • Symbol: TPSI3440DV-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: tpsi3440dv-t1-ge3-etched.step / tpsi3440dv-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tpsi3440dv-t1-ge3.step / tpsi3440dv-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TECH PUBLIC datasheet (6 pp, sha256 7450b4ed89174581, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF