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Contents

README

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TPSI3050QDWZRQ1

Texas Instruments · Motor Driver ICs · SOIC-8

TPSI3050QDWZRQ1 from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EN input Active-high driver enable, recommended 0 to 48.0 V in two-wire mode and 0 to 5.5 V in three-wire mode (absolute maximum 60 V).
2 PXFR input Power transfer control: an external resistor from PXFR to VSSP selects one of seven power levels, setting the power-converter duty cycle in three-wire mode or the EN pin current limit in two-wire mode (0 to 5.5 V recommended, 60 V absolute maximum).
3 VDDP power_in Primary-side power supply, 3.0 to 5.5 V in three-wire mode (6 V absolute maximum), referenced to VSSP.
4 VSSP power_in Ground supply for the primary side.
5 VSSS power_in Ground supply for the secondary side.
6 VDDM power_out Generated mid supply, referenced to VSSS (6 V absolute maximum), with 0.003 to 40 µF decoupling to VSSS.
7 VDDH power_out Generated high supply (nominal 10 V gate-drive rail, 12 V absolute maximum), with 0.003 to 40 µF decoupling to VDDM.
8 VDRV output Active-high driver output with 1.5/3-A peak source and sink current (12 V absolute maximum).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOIC-8
Category Power Supply Chip
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VDDP undervoltage threshold rising VVDDP_UV_R 2.5 2.7 2.9 V VDDP rising 8
VDDP undervoltage threshold falling VVDDP_UV_F 2.35 2.55 2.75 V VDDP falling 8
VDDH undervoltage threshold rising VVDDH_UV_R 8.3 8.6 9 V VDDH rising. 8
VDDH undervoltage threshold falling VVDDH_UV_F 6.3 6.6 6.9 V TPSI3050-Q1 only. VDDH falling. 8
VDDH output voltage, two-wire VVDDH 9.4 10.2 11 V EN = 6.5 V, VVDDH in steady state. 9
VDRV output voltage driven high, two-wire VVDRV_H 9.4 10.2 11 V EN = 6.5 V, VVDDH in steady state, no DC loading. 9
VDDM voltage sourcing external current, two-wire VVDDM_IAUX 4.6 5.5 V EN = 6.5 V, steady state. RPXFR = 20 kΩ, CDIV1 = CDIV2 = 220 nF, source 1.7 mA from VDDM, measure VDDM voltage. 9
VDDH output voltage, three-wire VVDDH 9.4 10.2 11 V VVDDP = 3.0 V, EN = 3.0 V, VVDDH in steady state. 10
VDRV output voltage driven high, three-wire VVDRV_H 9.4 10.2 11 V VVDDP = 3.0 V, EN = 3.0 V, VVDDH in steady state, no DC loading. 10
VDDM voltage sourcing external current, three-wire VVDDM_IAUX 4.6 5.5 V VVDDP = 5.0 V, EN = 0 V, steady state, RPXFR = 20 kΩ, CDIV1 = CDIV2 = 220 nF, source 10 mA from VDDM, measure VVDDM. 10
Minimum EN voltage for valid logic high, two-wire VIH_EN 6.5 V Two-wire mode 8
Maximum EN voltage for valid logic low, two-wire VIL_EN 2 V Two-wire mode 9
VDDP output voltage ripple VVDDP_RIPPLE 600 mV EN = 6.5 V, VVDDH in steady state. 9
VDRV output voltage driven low VVDRV_L 0.1 V EN = 6.5 V → 0 V, VVDDH in steady state, sink 10 mA load. 9
Propagation delay EN falling to VDRV 10%, two-wire tHL_VDRV 2.4 3 µs EN = 6.5 V → 0 V, VVDRV = 1.0 V. 11
Propagation delay EN rising to VDRV 90%, three-wire tLH_VDRV 3 4.5 µs VVDDP = 3.3 V, VVDDH steady state, EN = 0 V → 3.3 V, VVDRV = 9.0 V. 11
Propagation delay EN falling to VDRV 10%, three-wire tHL_VDRV 2.5 3 µs VVDDP = 3.3 V, VVDDH steady state, EN = 3.3 V → 0 V, VVDRV = 1.0 V. 11
VDDP primary supply voltage, three-wire VDDP 3 5.5 V Three-wire mode 5
Enable voltage, two-wire EN 0 48 V Two-wire mode 5
Enable voltage, three-wire EN 0 5.5 V Three-wire mode 5
Power transfer control voltage PXFR 0 5.5 V 5
Decoupling capacitance VDDP-VSSP, two-wire CVDDP 220 330 nF Two-wire mode 5
Decoupling capacitance VDDP-VSSP, three-wire CVDDP 0.22 20 µF Three-wire mode 5
Decoupling capacitance VDDH-VDDM CDIV1 0.003 40 µF 5
Decoupling capacitance VDDM-VSSS CDIV2 0.003 40 µF 5
Ambient operating temperature TA -40 125 °C 5
Operating junction temperature TJ -40 150 °C 5
EN rise and fall rate, two-wire /ΔVEN/Δt/ 65 V/ms Two-wire mode 5
VDDP voltage VDDP -0.3 6 V 5
EN voltage EN -0.3 60 V 5
PXFR voltage PXFR -0.3 60 V 5
VDRV voltage VDRV -0.3 12 V 5
VDDH voltage VDDH -0.3 12 V 5
VDDM voltage VDDM -0.3 6 V 5
VDDH, VDDM voltage VDDH, VDDM -0.3 6 V 5
Junction temperature TJ -40 150 °C 5
Storage temperature Tstg -65 150 °C 5
Junction-to-ambient thermal resistance RϴJA 89.3 °C/W DWZ (SOIC) 8 pins 6
Junction-to-case (top) thermal resistance RϴJC(top) 40.3 °C/W DWZ (SOIC) 8 pins 6
Junction-to-board thermal resistance RΘJB 45.2 °C/W DWZ (SOIC) 8 pins 6
Junction-to-top characterization parameter ψJT 10.3 °C/W DWZ (SOIC) 8 pins 6
Junction-to-board characterization parameter ΨJB 44.4 °C/W DWZ (SOIC) 8 pins 6
Maximum power dissipation, VDDP PD 250 mW VVDDP = 5 V, RPXFR = 20 kΩ, three-wire mode, CVDRV = 100 pF, CDIV1 = CDIV2 = 100 nF, fEN = 1-kHz square wave, VEN = 5 V peak to peak. 6
Maximum power dissipation, EN PD 350 mW RPXFR = 20 kΩ, two-wire mode, CVDRV = 100 pF, CDIV1 = CDIV2 = 100 nF, fEN = 1-kHz square wave, VEN = 48 V peak to peak. 6
VDDP undervoltage threshold hysteresis VVDDP_UV_HYS 75 mV 8
Temperature shutdown TSD 173 ℃ 8
VDDH undervoltage threshold hysteresis VVDDH_UV_HYS 2 V TPSI3050-Q1 only. 8
Driver on resistance in low state RDSON_VDRV 1.7 Ω Force VVDDH = 10 V, sink IVDRV = 50 mA. 8
Driver on resistance in high state RDSON_VDRV 2.5 Ω Force VVDDH = 10 V, source IVDRV = 50 mA. 8
VDRV peak output current during rise IVDRV_PEAK 1.5 A VVDDH in steady state, transition EN from low to high, measure peak current. 8
VDRV peak output current during fall IVDRV_PEAK 3 A VVDDH in steady state, transition EN from high to low, measure peak current. 8

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing pet Reinforced insulation; Maximum transient isolation voltage, 7071 VPK; Maximum repetitive peak isolation voltage, 1414 VPK; Maximum 7
contacts copper pins to maximize thermal conductivity. However, keep in mind that no traces or coppers from different high 34

CAD (KiCad official)

  • Symbol: TPSI3050QDWZRQ1
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: tpsi3050qdwzrq1-etched.step / tpsi3050qdwzrq1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tpsi3050qdwzrq1.step / tpsi3050qdwzrq1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (44 pp, sha256 507738bfe65bca19, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF