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Contents

README

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TPS7A9201DSKT

Texas Instruments · Pre-ordered Chips · SON-10-EP(2.5x2.5)

TPS7A9201DSKT from Texas Instruments, in a SON-10-EP(2.5x2.5). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUT power_out Regulated output; a 22 µF or greater capacitor must be connected from this pin to GND for stability.
2 OUT power_out Regulated output; a 22 µF or greater capacitor must be connected from this pin to GND for stability.
3 FB input Feedback pin, input to the control loop error amplifier used to set the output voltage of the device.
4 GND power_in Device ground; connect to the device thermal pad.
5 PG output Open-drain power-good indicator for the LDO output voltage; requires a 10-kΩ to 100-kΩ external pullup resistor and can be left floating or connected to GND if not used.
6 SS_CTRL input Soft-start control pin; connect to GND or IN to change the NR/SS capacitor charging current, and connect to GND if no CNR/SS capacitor is used to avoid output overshoot.
7 EN input Enable pin that turns the LDO on if VEN ≥ VIH(EN) and off if VEN ≤ VIL(EN); must be connected to IN if the enable function is not used.
8 NR/SS passive Noise reduction pin; connect an external capacitor to bypass internal bandgap reference noise and to set the output ramp rate to limit inrush current.
9 IN power_in Input supply pin (1.4 V to 6.5 V); a 10 µF or greater input capacitor is required.
10 IN power_in Input supply pin (1.4 V to 6.5 V); a 10 µF or greater input capacitor is required.
11 Thermal Pad passive Connect the thermal pad to the PCB ground plane.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SON-10-EP(2.5x2.5)
Category Interface ICs
Pins 11

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input supply voltage range VIN 1.4 6.5 V 4
Input supply UVLO VUVLO 1.31 1.39 V VIN rising 4
Output voltage accuracy VOUT -1 1 % 0.8 V ≤ VOUT ≤ 5 V, 5 mA ≤ IOUT ≤ 2 A 4
Dropout voltage VDO 400 mV VIN ≥ 1.4 V, 0.8 V ≤ VOUT ≤ 5.0 V, IOUT = 2 A, VFB = 0.8 V, 3% 4
Output current limit ILIM 2.3 2.6 2.9 A VOUT forced at 0.9 × VOUT(TARGET), VIN = VOUT(TARGET) + 300 mV 5
GND pin current IGND 2.1 3.5 mA Both channels enabled, per channel, VIN = 6.5 V, IOUT = 5 mA 5
Shutdown GND pin current ISDN 0.1 15 µA Both channels shutdown, per channel, PGx = (open), VIN = 6.5 V, VEN = 0.5 V 5
EN pin current IEN -0.2 0.2 µA VIN = 6.5 V, 0 V ≤ VEN ≤ 6.5 V 5
EN pin low-level input voltage VIL(EN) 0 0.4 V device disabled 5
EN pin high-level input voltage VIH(EN) 1.1 6.5 V device enabled 5
SS_CTRL pin current ISS_CTRL -0.2 0.2 µA VIN = 6.5 V, 0 V ≤ VSS_CTRL ≤ 6.5 V 5
PG pin threshold VIT(PG) 82 88.9 93 % For PG transitioning low with falling VOUT, expressed as a percentage of VOUT(TARGET) 5
PG pin low-level output voltage VOL(PG) 0.4 V VOUT < VIT(PG), IPG = -1 mA (current into device) 5
PG pin leakage current Ilkg(PG) 1 µA VOUT > VIT(PG), VPG = 6.5 V 5
NR/SS pin charging current INR/SS 4 6.2 9 µA VNR/SS = GND, 1.4 V ≤ VIN ≤ 6.5 V, VSS_CTRL = GND 5
NR/SS pin charging current INR/SS 65 100 150 µA VNR/SS = GND, 1.4 V ≤ VIN ≤ 6.5 V, VSS_CTRL = VIN 5
FB pin leakage current IFB -100 100 nA VIN = 6.5 V, VFB = 0.8 V 5
Output voltage range VOUT 0.8 5.2 V 0.8, 1.0% to 5.2 + 1.0% 4
Reference voltage VREF 0.8 V 4
Output current IOUT 0 2 A 4
Power-good pullup resistance RPG 10 100 kΩ 4
Junction temperature range TJ -40 125 °C 4
Voltage IN, PG, EN -0.3 7 V 3
Voltage IN, PG, EN pulse -0.3 7.5 V 5% duty cycle, pulse duration = 200 µs 3
Voltage NR/SS, FB -0.3 3.6 V 3
PG sink current 5 mA sink current into device 3
Operating junction temperature TJ -55 150 °C 3
Storage temperature Tstg -55 150 °C 3
ESD HBM V(ESD) -2000 2000 V HBM per ANSI/ESDA/JEDEC JS-001 4
ESD CDM V(ESD) -500 500 V CDM per JESD22-C101 4
Junction-to-ambient thermal resistance RθJA 56.9 °C/W 4
Junction-to-case (top) thermal resistance RθJC(top) 46.3 °C/W 4
Junction-to-board thermal resistance RθJB 29.1 °C/W 4
Junction-to-case (bottom) thermal resistance RθJC(bot) 3.2 °C/W 4
Line regulation ΔVOUT(ΔVIN) 0.003 %/V IOUT= 5 mA, 1.4 V ≤ VIN ≤ 6.5 V 4
Load regulation ΔVOUT(ΔIOUT) 0.03 %/A 5 mA ≤ IOUT ≤ 2 A 4
Output noise voltage Vn 4.6 μVRMS BW = 10 Hz to 100 kHz, VIN = 1.8 V, VOUT = 0.8 V, IOUT = 2.0 A, CNR/SS = 10 nF, CFF = 10 nF 5

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper input and output capacitors, and to the LDO ground pin as close to each other as possible, connected by a wide, component-side, copper surface. The use of vias and long traces to create LDO circuit co 22

CAD (KiCad official)

  • Symbol: TPS7A9201DSKT
  • Footprint: Package_SON:WSON-10-1EP_2.5x2.5mm_P0.5mm_EP1.2x2mm
  • 3D model: SON-10-EP(2.5x2.5) (KiCad packages3D, STEP)
  • 3D model files: tps7a9201dskt-etched.step / tps7a9201dskt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps7a9201dskt.step / tps7a9201dskt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (35 pp, sha256 3ae79b98655c8256, retrieved 2026-10-23, tier: manufacturer)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF