component
TPS73115DBVR
Public Made by Adomby adom
Texas Instruments Voltage Regulators - Linear, Low Drop Out (LDO) Regulators, SOT-23-5. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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TPS73115DBVR
Texas Instruments · Voltage Regulators - Linear, Low Drop Out (LDO) Regulators · SOT-23-5
TPS73115DBVR from Texas Instruments, in a SOT-23-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IN | input | Input supply for the regulator, with a recommended input voltage range of 1.7 V to 5.5 V. |
| 2 | GND | power_in | Ground pin for the regulator. |
| 3 | EN | input | Driving EN high turns on the regulator and driving it low puts it into shutdown mode; EN can be connected to IN if not used. |
| 4 | NR/FB | input | On fixed-voltage versions, an external capacitor on NR bypasses internal bandgap noise to very low output noise levels. |
| 5 | OUT | output | Regulator output, which has no output capacitor requirements for stability. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOT-23-5 |
| Category | Power Management (PMIC) |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage range | VIN | 1.7 | 5.5 | V | 5 | ||
| Output voltage accuracy, nominal | -0.5 | 0.5 | % | TJ = 25°C | 5 | ||
| Output voltage accuracy over line, load and temperature | -1 | 0.5 | 1 | % | VOUT + 0.5V ≤ VIN ≤ 5.5V; 10mA ≤ IOUT ≤ 150mA | 5 | |
| Dropout voltage | VDO | 30 | 100 | mV | IOUT = 150mA (VIN = VOUT(NOM) - 0.1V) | 5 | |
| Output current limit | ICL | 150 | 360 | 500 | mA | VOUT = 0.9 × VOUT(nom) | 5 |
| Reverse leakage current | IREV | 0.1 | 10 | µA | VEN ≤ 0.5V, 0V ≤ VIN ≤ VOUT | 5 | |
| Ground pin current, legacy silicon | IGND | 400 | 550 | µA | IOUT = 10mA (IQ), legacy silicon | 5 | |
| Ground pin current, new silicon | IGND | 400 | 630 | µA | IOUT = 10mA (IQ), new silicon | 5 | |
| Ground pin current at full load | IGND | 550 | 750 | µA | IOUT = 150mA | 5 | |
| Shutdown current, legacy silicon | ISHDN | 0.02 | 1 | µA | VEN ≤ 0.5V, VOUT ≤ VIN ≤ 5.5V, -40°C ≤ TJ ≤ 100℃, legacy silicon | 5 | |
| Shutdown current, new silicon | ISHDN | 0.02 | 1 | µA | VEN ≤ 0.5V, VOUT ≤ VIN ≤ 5.5V, new silicon | 5 | |
| Enable pin current (enabled) | IEN(high) | 0.02 | 0.1 | µA | VEN = 5.5V | 5 | |
| EN pin low (shutdown) | VEN(low) | 0 | 0.5 | V | 5 | ||
| EN pin high (enabled) | VEN(high) | 1.7 | V | Maximum printed as VIN | 5 | ||
| Power-supply rejection ratio | PSRR | 58 | dB | f = 100Hz, IOUT = 150mA | 5 | ||
| Power-supply rejection ratio | PSRR | 37 | dB | f = 10kHz, IOUT = 150mA | 5 | ||
| Line regulation | ΔVOUT(ΔVIN) | 0.01 | %/V | VOUT(nom) + 0.5V ≤ VIN ≤ 5.5V | 5 | ||
| Load regulation | ΔVOUT(ΔIOUT) | 0.002 | %/mA | 1mA ≤ IOUT ≤ 150mA | 5 | ||
| Load regulation | ΔVOUT(ΔIOUT) | 0.0005 | %/mA | 10mA ≤ IOUT ≤ 150mA | 5 | ||
| Output impedance in dropout | ZO(DO) | 0.25 | Ω | 1.7V ≤ VIN ≤ VOUT + VDO | 5 | ||
| Short-circuit current | ISC | 200 | mA | VOUT = 0V | 5 | ||
| Startup time | tSTR | 600 | µs | VOUT = 3V, RL = 30Ω, COUT = 1μF, CNR = 0.01μF | 5 | ||
| Thermal shutdown temperature, shutdown | TSD | 160 | °C | Shutdown, temperature increasing | 5 | ||
| Thermal shutdown temperature, reset | TSD | 140 | °C | Reset, temperature decreasing | 5 | ||
| Input supply voltage | VIN | 1.7 | 5.5 | V | 4 | ||
| Output current | IOUT | 0 | 150 | mA | 4 | ||
| Operating junction temperature | TJ | -40 | 125 | °C | 4 | ||
| Input voltage | VIN | -0.3 | 6 | V | 4 | ||
| Enable voltage | VEN | -0.3 | 6 | V | 4 | ||
| Output voltage | VOUT | -0.3 | 5.5 | V | 4 | ||
| Noise reduction and feedback pin voltage | VNR, VFB | -0.3 | 6 | V | 4 | ||
| Operating junction temperature | TJ | -55 | 150 | °C | 4 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 4 | ||
| Junction-to-ambient thermal resistance, new silicon | RθJA | 185.2 | °C/W | 4 | |||
| Junction-to-ambient thermal resistance, legacy silicon | RθJA | 207.2 | °C/W | 4 | |||
| Junction-to-case (top) thermal resistance, new silicon | RθJC(top) | 82.9 | °C/W | 4 | |||
| Junction-to-case (top) thermal resistance, legacy silicon | RθJC(top) | 124.2 | °C/W | 4 | |||
| Junction-to-board thermal resistance, new silicon | RθJB | 53.1 | °C/W | 4 | |||
| Junction-to-board thermal resistance, legacy silicon | RθJB | 35 | °C/W | 4 | |||
| Junction-to-top characterization parameter, new silicon | ψJT | 21.1 | °C/W | 4 | |||
| Junction-to-top characterization parameter, legacy silicon | ψJT | 13.5 | °C/W | 4 | |||
| Junction-to-board characterization parameter, new silicon | ψJB | 52.7 | °C/W | 4 | |||
| Junction-to-board characterization parameter, legacy silicon | ψJB | 34.1 | °C/W | 4 |
CAD (KiCad official)
- Symbol:
TPS73115DBVR - Footprint:
Package_TO_SOT_SMD:SOT-23-5 - 3D model: SOT-23-5 (KiCad packages3D, STEP)
- 3D model files:
tps73115dbvr-etched.step/tps73115dbvr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tps73115dbvr.step/tps73115dbvr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (34 pp, sha256
f38aede3fd278b3a, retrieved 2026-11-05, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).