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Contents

README

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TPS73033DBVT

Texas Instruments · Voltage Regulators - Linear, Low Drop Out (LDO) Regulators · SOT-23-5

TPS73033DBVT from Texas Instruments, in a SOT-23-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 IN input Input to the device; the recommended input voltage range is 2.7 V to 5.5 V.
2 GND power_in Regulator ground.
3 EN input Enable pin: driving EN high turns on the regulator and driving it low puts the regulator into shutdown mode; EN can be connected to IN if not used.
4 NC/NR passive Noise-reduction pin on the legacy chip, where an external capacitor (CNR 0 to 10 nF) filters band-gap noise; on the new chip this is a no-connect pin that is not internally connected and may be tied to GND or left floating.
5 OUT output Output of the regulator, which requires a minimum COUT of 2.2 µF for stability.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOT-23-5
Category Power Management (PMIC)
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input voltage VIN 2.7 5.5 V 4
Enable voltage VEN 0 5.5 V 4
Output current IOUT 0 200 mA 4
Operating junction temperature TJ -40 125 °C 4
Output capacitor COUT 2.2 10 µF footnotes (1),(2): minimum 4.7 µF if CFF not used or VOUT(nom) < 1.8 V; minimum effective 0.47 µF for new chip 4
Input capacitor CIN 0.1 µF legacy chip 4
Input capacitor CIN 1 µF new chip 4
Noise reduction capacitor CNR 0 10 nF legacy chip only 4
Feed-forward capacitor CFF 0 10 100 nF new chip; optional 4
Absolute maximum voltage VIN, VEN, VOUT VIN, VEN, VOUT -0.3 6 V legacy chip 4
Absolute maximum voltage VIN, VEN VIN, VEN -0.3 6.5 V new chip 4
Absolute maximum voltage VOUT VOUT -0.3 V new chip; maximum is VIN + 0.3 V or 6.5 V, whichever is smaller 4
Operating junction temperature (DBV package) TJ -40 150 °C DBV package 4
Storage temperature Tstg -65 150 °C 4
Output voltage accuracy VOUT -2 2 % 0µA < IOUT < 200mA, VOUT+ 1V < VIN < 5.5V 5
Output current limit ICL 285 600 mA VOUT = 0V (legacy chip) 5
Output current limit ICL 320 460 mA VIN = VOUT(NOM) + 1 V, VOUT = 0.9 x VOUT(NOM) (new chip only) 5
Quiescent current (GND current) IGND 170 220 µA 0µA ≤ IO ≤ 200mA (legacy chip) 5
Quiescent current (GND current) IGND 250 1000 µA 0µA ≤ IO ≤ 200mA (new chip) 5
Enable pin current IEN -1 1 µA VEN = 0 V 6
UVLO threshold VUVLO 2.25 2.65 V VIN rising (legacy chip) 6
UVLO threshold VUVLO 1.32 1.6 V VIN rising (new chip) 6
High-level enable input voltage VEN(HI) 1.7 V 2.7V ≤ VIN ≤ 5.5V 6
High-level enable input voltage VEN(HI) 0.85 V 2.7V ≤ VIN ≤ 5.5V (new chip) 6
Low-level enable input voltage VEN(LOW) 0 0.7 V 2.7V ≤ VIN ≤ 5.5V 6
Low-level enable input voltage VEN(LOW) 0 0.425 V 2.7V ≤ VIN ≤ 5.5V (new chip) 6
Dropout voltage VDO 120 210 mV VIN= VOUT - 0.1V, IOUT = 200mA 5
Line regulation ΔVOUT/ΔVIN 0.05 %/V VOUT + 1V ≤ VIN ≤ 5.5V 5
Load regulation ΔVOUT/ΔIOUT 5 mV 0µA ≤ IOUT ≤ 200mA 5
Short-circuit current limit ISC 175 mA VOUT = 0V (new chip) 5
Shutdown current ISHDN 0.07 1 µA VEN = 0V, 2.7V < VIN < 5.5V (legacy chip) 5
Shutdown current ISHDN 0.01 1 µA VEN = 0V, 2.7V < VIN < 5.5V (new chip) 5
Power-supply rejection ratio PSRR 70 dB f = 100Hz, IOUT = 10mA (legacy chip) 6
Power-supply rejection ratio PSRR 64 dB f = 100Hz, IOUT = 10mA (new chip) 6
Power-supply rejection ratio PSRR 68 dB f = 100Hz, IOUT = 200mA (legacy chip) 6
Power-supply rejection ratio PSRR 65 dB f = 100Hz, IOUT = 200mA (new chip) 6
Power-supply rejection ratio PSRR 49 dB f = 10kHz, IOUT = 200mA (new chip) 6
Power-supply rejection ratio PSRR 43 dB f = 100kHz, IOUT = 200mA (legacy chip) 6
Power-supply rejection ratio PSRR 39 dB f = 100kHz, IOUT = 200mA (new chip) 6
Output noise voltage Vn 33 µVRMS BW = 200Hz to 100kHz, IOUT = 200mA, CNR = 0.01µF (legacy chip) 6
Output noise voltage Vn 69 µVRMS BW = 200Hz to 100kHz, IOUT = 200mA (new chip) 6
Undervoltage lockout hysteresis VUVLO(HYST) 100 mV VCC rising (legacy chip) 6
Undervoltage lockout hysteresis VUVLO(HYST) 130 mV VCC rising (new chip) 6
Junction-to-ambient thermal resistance RθJA 182.3 °C/W DBV (SOT23-5), new chip 5
Junction-to-case (top) thermal resistance RθJC(top) 114.8 °C/W DBV (SOT23-5), new chip 5
Junction-to-board thermal resistance RθJB 79.1 °C/W DBV (SOT23-5), new chip 5
Junction-to-top characterization parameter ψJT 56.8 °C/W DBV (SOT23-5), new chip 5
Junction-to-board characterization parameter ψJB 78.8 °C/W DBV (SOT23-5), new chip 5

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin D. This package is tin-lead (SnPb); consult the factory for availability of lead-free material. NanoStar is a trademark of Texas Instruments. 28

CAD (KiCad official)

  • Symbol: TPS73033DBVT
  • Footprint: Package_TO_SOT_SMD:SOT-23-5
  • 3D model: SOT-23-5 (KiCad packages3D, STEP)
  • 3D model files: tps73033dbvt-etched.step / tps73033dbvt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps73033dbvt.step / tps73033dbvt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (43 pp, sha256 ba08deb68c80cc87, retrieved 2026-11-06, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF