component
TPS70950QDRVRQ1
Public Made by Adomby adom
Texas Instruments Voltage Regulators - Linear, Low Drop Out (LDO) Regulators, WSON-6-EP(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 1mo ago |
| viewers | 1mo ago |
| package.json | 1mo ago |
| page.json | 26d ago |
| README.md | 26d ago |
| tps70950qdrvrq1-etched.fit.json | 1mo ago |
| tps70950qdrvrq1-etched.glb | 1mo ago |
| tps70950qdrvrq1-etched.step | 1mo ago |
| tps70950qdrvrq1.glb | 1mo ago |
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| tps70950qdrvrq1.step | 1mo ago |
TPS70950QDRVRQ1
Texas Instruments · Voltage Regulators - Linear, Low Drop Out (LDO) Regulators · WSON-6-EP(2x2)
TPS70950QDRVRQ1 from Texas Instruments, in a WSON-6-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | OUT | output | Regulated output voltage; minimum 2.2 µF ceramic capacitor required between this pin and ground for stability. |
| 2 | NC | unconnected | No internal connection |
| 3 | GND | power_in | Ground |
| 4 | EN | input | Enable input; drive above 0.9 V to enable device, below 0.4 V to disable; can be left floating; maximum voltage 6.5 V. |
| 5 | NC | unconnected | No internal connection |
| 6 | IN | power_in | Unregulated input supply; input voltage range 2.7 V to 30 V. |
| 7 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WSON-6-EP(2x2) |
| Category | Power Management (PMIC) |
| Pins | 7 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage (recommended operating) | VIN | 2.7 | 30 | V | 4 | ||
| Output voltage (recommended operating) | VOUT | 1.2 | 6.5 | V | 4 | ||
| Output current (recommended operating) | IOUT | 0 | 150 | mA | 4 | ||
| Enable voltage (recommended operating) | VEN | 0 | 6.5 | V | 4 | ||
| Output capacitor (recommended operating) | COUT | 2 | 2.2 | 47 | µF | 4 | |
| Operating junction temperature (recommended operating) | TJ | -40 | 125 | °C | 4 | ||
| Input voltage (absolute maximum) | VIN | -0.3 | 32 | V | 3 | ||
| Enable voltage (absolute maximum) | VEN | -0.3 | 7 | V | 3 | ||
| Output voltage (absolute maximum) | VOUT | -0.3 | 7 | V | 3 | ||
| Junction temperature (absolute maximum) | TJ | -55 | 150 | °C | 3 | ||
| Ambient temperature (absolute maximum) | TA | -40 | 125 | °C | 3 | ||
| Storage temperature (absolute maximum) | Tstg | -55 | 150 | °C | 3 | ||
| Input voltage range | VIN | 2.7 | 30 | V | 5 | ||
| Output voltage range | VOUT | 1.2 | 6.5 | V | 5 | ||
| DC output accuracy | VOUT | -1 | 1 | % | VOUT ≥ 3.3V | 5 | |
| Line regulation | ΔVOUT | 3 | 10 | mV | (VOUT(nom) + 1V, 2.7V) ≤ VIN ≤ 30V | 5 | |
| Load regulation | ΔVOUT | 20 | 50 | mV | VIN = VOUT(typ) + 1.5V or 3V (whichever is greater), 100µA ≤ IOUT ≤ 150mA | 5 | |
| Dropout voltage TPS70950 at 50 mA | VDO | 245 | 500 | mV | TPS70950, IOUT= 50mA | 5 | |
| Dropout voltage TPS70950 at 150 mA | VDO | 690 | 1200 | mV | TPS70950, IOUT= 150mA | 5 | |
| Output current limit | ICL | 200 | 320 | 500 | mA | VOUT= 0.9 × VOUT(nom) | 5 |
| Ground pin current (VOUT > 3.3V) | IGND | 1.4 | 2.7 | µA | IOUT= 0mA, VOUT > 3.3V | 5 | |
| Ground pin current at 100 µA load | IGND | 6.7 | 10 | µA | IOUT= 100µA, VIN = 30V | 5 | |
| Enable low input voltage (device disabled) | VEN(LOW) | 0 | 0.4 | V | device disabled | 5 | |
| Startup time (VOUT(nom) > 3.3V) | tSTR | 500 | 1500 | µs | VOUT(nom) > 3.3V | 6 | |
| Shutdown current | ISHDN | 150 | nA | VEN ≤ 0.4V, VIN = 2.7V | 5 | ||
| Ground pin current at 150 mA load | IGND | 350 | µA | IOUT = 150mA | 5 | ||
| Power supply rejection ratio at 10 Hz | PSRR | 80 | dB | f = 10Hz | 5 | ||
| Power supply rejection ratio at 100 Hz | PSRR | 62 | dB | f = 100Hz | 5 | ||
| Power supply rejection ratio at 1 kHz | PSRR | 52 | dB | f = 1kHz | 5 | ||
| Output noise voltage | Vn | 190 | µVRMS | BW = 10Hz to 100kHz, IOUT= 10mA, VIN = 2.7V, VOUT = 1.2V | 5 | ||
| Enable high input voltage (device enabled) | VEN(HI) | 0.9 | V | device enabled | 5 | ||
| EN pin current | IEN | 300 | nA | EN = 1.0V, VIN = 5.5V | 5 | ||
| Reverse current flowing out of IN pin | IREV | 10 | nA | VOUT = 3V, VIN = VEN = 0V | 5 | ||
| Reverse current flowing into OUT pin | IREV | 100 | nA | VOUT = 3V, VIN = VEN = 0V | 5 | ||
| Thermal shutdown temperature (shutdown, rising) | TSD | 158 | °C | temperature rising (shutdown) | 5 | ||
| Thermal shutdown reset temperature (falling) | TSD | 140 | °C | temperature falling (reset) | 5 | ||
| Startup time (enable to 95% VOUT) | tSTR | 200 | µs | from VEN > VEN(HI) to VOUT = 95% of VOUT(NOM), 1V/us | 6 | ||
| Junction-to-ambient thermal resistance (DRV, old die) | RθJA | 73.1 | °C/W | 旧芯片 (old die) | 4 | ||
| Junction-to-ambient thermal resistance (DRV, new die) | RθJA | 82.5 | °C/W | 新芯片 (new die) | 4 | ||
| Junction-to-case (top) thermal resistance (DRV, old die) | RθJC(top) | 97 | °C/W | 旧芯片 (old die) | 4 | ||
| Junction-to-case (top) thermal resistance (DRV, new die) | RθJC(top) | 101.25 | °C/W | 新芯片 (new die) | 4 | ||
| Junction-to-board thermal resistance (DRV, old die) | RθJB | 42.6 | °C/W | 旧芯片 (old die) | 4 | ||
| Junction-to-board thermal resistance (DRV, new die) | RθJB | 49.1 | °C/W | 新芯片 (new die) | 4 | ||
| Junction-to-top characterization parameter (DRV, old die) | ΨJT | 2.9 | °C/W | 旧芯片 (old die) | 4 | ||
| Junction-to-top characterization parameter (DRV, new die) | ΨJT | 5.8 | °C/W | 新芯片 (new die) | 4 | ||
| Junction-to-board characterization parameter (DRV, old die) | ΨJB | 42.9 | °C/W | 旧芯片 (old die) | 4 | ||
| Junction-to-board characterization parameter (DRV, new die) | ΨJB | 49.14 | °C/W | 新芯片 (new die) | 4 | ||
| Junction-to-case (bottom) thermal resistance (DRV, old die) | RθJC(bot) | 12.8 | °C/W | 旧芯片 (old die) | 4 | ||
| Junction-to-case (bottom) thermal resistance (DRV, new die) | RθJC(bot) | 19.8 | °C/W | 新芯片 (new die) | 4 |
CAD (KiCad official)
- Symbol:
TPS70950QDRVRQ1 - Footprint:
Package_SON:WSON-6-1EP_2x2mm_P0.65mm_EP1x1.6mm - 3D model: WSON-6-EP(2x2) (KiCad packages3D, STEP)
- 3D model files:
tps70950qdrvrq1-etched.step/tps70950qdrvrq1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tps70950qdrvrq1.step/tps70950qdrvrq1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (38 pp, sha256
ed3126ec0589e178, retrieved 2026-09-23, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).