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TPS62751DSKR
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Texas Instruments DC-DC Converters, SON-10-EP(2.5x2.5). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTPS62751DSKR
Texas Instruments · DC-DC Converters · SON-10-EP(2.5x2.5)
TPS62751DSKR from Texas Instruments, in a SON-10-EP(2.5x2.5). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | PGND | power_in | Power GND pin for the N-MOSFET. |
| 2 | L | output | Switch pin connected to the internal MOSFET switches; the external inductor connects between this terminal and the output capacitor. |
| 3 | H/L | input | High enables the upper current limit threshold set by RSET_H and low enables the lower threshold set by RSET_L; this pin must be terminated. |
| 4 | EN | input | Enable pin: pulling low forces the device into shutdown mode and pulling high enables the device; this pin must be terminated. |
| 5 | FB | input | Feedback pin for the internal regulation loop; connect the external resistor divider to this pin, or connect it directly to the output capacitor for the fixed output voltage option. |
| 6 | AGND | power_in | Analog GND pin for the internal analog circuitry. |
| 7 | ISET_L | input | Sets the lower average input current limit by external resistor. |
| 8 | ISET_U | input | Sets the upper average input current limit by external resistor. |
| 9 | PVIN | power_in | VIN power supply pin for the output stage. |
| 10 | AVIN | power_in | VIN low-noise analog supply for the internal analog circuitry; this pin must be connected to PVIN. |
| 11 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SON-10-EP(2.5x2.5) |
| Category | Power Management (PMIC) |
| Pins | 11 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply Voltage | VIN | 2.9 | 6 | V | 2 | ||
| Input Voltage Range | VIN | 2.9 | 6 | V | 3 | ||
| Operating Quiescent Current (TPS62751) | IQ | 30 | mA | IOUT = 0 mA, device not switching | 3 | ||
| Shutdown Current | ISD | 0.2 | 3 | μA | EN = GND | 3 | |
| Undervoltage Lockout Threshold, Falling | VUVLO | 2.4 | V | Falling | 3 | ||
| Undervoltage Lockout Threshold, Rising | VUVLO | 2.9 | V | Rising | 3 | ||
| High Level Input Voltage | VIH | 1 | V | 2.9 V ≤ VIN ≤ 6.0V | 3 | ||
| Low Level Input Voltage | VIL | 0.4 | V | 2.9 V ≤ VIN ≤ 6.0 V | 3 | ||
| Input bias Current | IIN | 0.01 | 1 | μA | Pin tied to GND or VIN | 3 | |
| High side MOSFET On-Resistance (H/L=HI) | RDS(ON) | 130 | 290 | mΩ | VIN = 5.0 V, VGS = 6.5 V | 3 | |
| High side MOSFET On-Resistance (H/L=LO) | RDS(ON) | 282 | 550 | mΩ | VIN = 5.0 V, VGS = 6.5 V | 3 | |
| Low Side MOSFET On-Resistance | RDS(ON) | 58 | 125 | mΩ | VIN = VGS = 5.0 V | 3 | |
| Forward Current Limit High-Side and Low side | ILIMF | 1200 | 1500 | 1800 | mA | VIN = VGS = 5.0 V | 3 |
| Programmable Input current Range, ILIM_U selected | IIN(MAX) | 300 | 1300 | mA | ILIM_U selected, H/L = High | 3 | |
| Programmable Input current Range, ILIM_L selected | IIN(MAX) | 50 | 300 | mA | ILIM_L selected, H/L = Low | 3 | |
| Current limit accuracy | -10 | 10 | % | ILIM_U selected | 3 | ||
| Thermal shutdown | TSD | 150 | °C | Increasing junction temperature | 3 | ||
| Thermal shutdown hysteresis | TSD | 20 | °C | Decreasing junction temperature | 3 | ||
| Oscillator Frequency | fSW | 2 | 2.25 | 2.5 | MHz | 2.9 V ≤ VIN ≤ 6.0 V | 3 |
| Reference Voltage | Vref | 600 | mV | 3 | |||
| Feedback Voltage | VFB(PWM) | -1.5 | 1.5 | % | PWM operation, 2.9 V ≤ VIN ≤ 6.0V | 3 | |
| Internal discharge resistor | R(DIS_CH) | 85 | 235 | 300 | Ω | Activated with EN = GND | 3 |
| Output voltage range for adjustable voltage | VOUT | 0.8 | V | Upper limit 0.85 × VIN | 2 | ||
| Operating ambient temperature | TA | -40 | 85 | °C | 2 | ||
| Operating virtual junction temperature | TJ | -40 | 125 | °C | 2 | ||
| Input voltage range VIN, AVIN | VIN | -0.3 | 7 | V | Respect to network ground | 2 | |
| Voltage range at EN, H/L, FB | -0.3 | 7 | V | VIN + 0.3, ≤7.0 V | 2 | ||
| Voltage on L, ILim_U, ILim_L | -0.3 | 7 | V | 2 | |||
| ESD rating HBM | 4 | kV | Human body model | 2 | |||
| ESD rating CDM | 1.5 | kV | Charge device model | 2 | |||
| ESD rating machine model | 200 | V | Machine model | 2 | |||
| Maximum operating junction temperature | TJ | -40 | 125 | °C | 2 | ||
| Storage temperature range | Tstg | -65 | 150 | °C | 2 | ||
| Junction-to-ambient thermal resistance | RθJA | 60.6 | °C/W | DSK package, high-K board | 2 | ||
| Junction-to-case (top) thermal resistance | RθJP | 6.3 | °C/W | DSK package | 2 | ||
| Junction-to-case thermal resistance | RθJC | 40 | °C/W | DSK package | 2 |
CAD (KiCad official)
- Symbol:
TPS62751DSKR - Footprint:
Package_SON:WSON-10-1EP_2.5x2.5mm_P0.5mm_EP1.2x2mm - 3D model: SON-10-EP(2.5x2.5) (KiCad packages3D, STEP)
- 3D model files:
tps62751dskr-etched.step/tps62751dskr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tps62751dskr.step/tps62751dskr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (32 pp, sha256
d102ff69b4937fbd, retrieved 2026-11-05, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).