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Contents

README

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TPS62263DRVR

Texas Instruments · DC-DC Converters · WSON-6-EP(2x2)

TPS62263DRVR from Texas Instruments, in a WSON-6-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 SW output Switch pin connected to the internal MOSFET switches; the external inductor connects between this terminal and the output capacitor, with absolute maximum voltage on SW of -0.3 V to 7 V.
2 MODE input Available only on the WSON package; MODE high forces fixed-frequency PWM operation, MODE low enables power save mode with automatic transition from PFM to fixed-frequency PWM, and the voltage at MODE is limited to -0.3 V to VIN + 0.3 V (7 V maximum).
3 FB input Feedback pin for the internal regulation loop; for the fixed-output TPS62263 (2.5 V), connect this pin directly to the output capacitor.
4 EN input Enable pin: pulling it low forces the device into shutdown mode and pulling it high enables the device; this pin must be terminated, with voltage limited to -0.3 V to VIN + 0.3 V (7 V maximum).
5 VIN power_in VIN power supply pin; recommended supply voltage is 2 V to 6 V, with absolute maximum input voltage of 7 V.
6 GND power_in GND supply pin (network ground reference for all voltages).
7 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package WSON-6-EP(2x2)
Category Power Management (PMIC)
Pins 7

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VIN Input voltage range VIN 2.3 6 V 5
Output current IOUT 600 mA VIN 2.5 V to 6 V 5
Output current IOUT 300 mA VIN 2.3 V to 2.5 V 5
Output current IOUT 150 mA VIN 2 V to 2.3 V 5
Shutdown current ISD 0.1 1 µA EN = GND 5
High level input voltage, EN, MODE VIH 1 V 2 V ≤ VIN ≤ 6 V; printed max is VIN (not numeric) 5
Low level input voltage, EN, MODE VIL 0 0.4 V 2 V ≤ VIN ≤ 6 V 5
Input bias current, EN, MODE IIN 0.01 1 µA EN, MODE = GND or VIN 5
High side MOSFET on-resistance RDS(on) 240 480 mΩ VIN = VGS = 3.6 V, TA = 25°C 5
Low side MOSFET on-resistance RDS(on) 185 380 mΩ VIN = VGS = 3.6 V, TA = 25°C 5
Forward current limit MOSFET high side and low side ILIMF 0.8 1 1.2 A VIN = VGS = 3.6 V 5
Oscillator frequency fSW 2 2.25 2.5 MHz 2 V ≤ VIN ≤ 6 V 5
Feedback voltage PWM mode, fixed output voltage versions VFB -1.5 0 1.5 % MODE = VIN, PWM operation, VFB = VOUT, 2.5 V ≤ VIN ≤ 6 V, 0 mA ≤ IOUT ≤ 600 mA 5
Leakage current into SW pin Ilkg 0.1 1 µA VIN = 3.6 V, VIN = VOUT = VSW, EN = GND 5
Operating ambient temperature TA -40 85 °C 4
Operating junction temperature TJ -40 125 °C 4
VIN input voltage VIN -0.3 7 V Absolute maximum, with respect to network ground 4
Voltage on SW VSW -0.3 7 V 4
Voltage at EN, MODE VEN, VMODE -0.3 V Printed as VIN + 0.3, ≤ 7 V (max not numeric in table) 4
Maximum operating junction temperature TJ -40 125 °C 4
Storage temperature Tstg -65 150 °C 4
Electrostatic discharge, human body model (HBM) V(ESD) -2000 2000 V Per ANSI/ESDA/JEDEC JS-001, all pins 4
Electrostatic discharge, charged device model (CDM) V(ESD) -1000 1000 V Per JEDEC JESD22-C101, all pins 4
Thermal shutdown TSD 140 °C Increasing junction temperature 5
Thermal shutdown hysteresis 20 °C Decreasing junction temperature 5
Undervoltage lockout threshold, falling UVLO 1.85 V Falling 5
Undervoltage lockout threshold, rising UVLO 1.95 V Rising 5
Operating quiescent current, PFM not switching IQ 15 µA IOUT = 0 mA, PFM mode enabled (MODE = GND), device not switching 5
Operating quiescent current, PFM switching IQ 18.5 µA IOUT = 0 mA, PFM mode enabled (MODE = GND), device switching, VOUT = 1.8 V, see (1) 5
Operating quiescent current, PWM no load IQ 3.8 mA IOUT = 0 mA, switching with no load (MODE = VIN), PWM operation, VOUT = 1.8 V, VIN = 3 V 5
Feedback voltage PFM mode, voltage positioning active VFB 1 % MODE = GND, device in PFM mode, voltage positioning active (1) 5
Internal reference voltage VREF 600 mV 5
Load regulation PWM mode -0.5 %/A PWM mode 5
Start-up time tStart Up 500 µs Time from active EN to reach 95% of nominal VOUT 5
VOUT ramp-up time tRamp 250 µs Time to ramp from 5% to 95% of VOUT 5
Junction-to-ambient thermal resistance (WSON) RθJA 67.8 °C/W DRV [WSON] 6-pin package 4
Junction-to-case (top) thermal resistance (WSON) RθJC(top) 88.5 °C/W DRV [WSON] 6-pin package 4
Junction-to-board thermal resistance (WSON) RθJB 37.2 °C/W DRV [WSON] 6-pin package 4
Junction-to-top characterization parameter (WSON) ψJT 2 °C/W DRV [WSON] 6-pin package 4
Junction-to-board characterization parameter (WSON) ψJB 37.6 °C/W DRV [WSON] 6-pin package 4
Junction-to-case (bottom) thermal resistance (WSON) RθJC(bot) 7.9 °C/W DRV [WSON] 6-pin package 4

CAD (KiCad official)

  • Symbol: TPS62263DRVR
  • Footprint: Package_SON:WSON-6-1EP_2x2mm_P0.65mm_EP1x1.6mm
  • 3D model: WSON-6-EP(2x2) (KiCad packages3D, STEP)
  • 3D model files: tps62263drvr-etched.step / tps62263drvr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps62263drvr.step / tps62263drvr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (39 pp, sha256 d038c06261cfd705, retrieved 2026-10-11, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF