component
TPS62260DDCT
Public Made by Adomby adom
Texas Instruments DC-DC Converters, TSOT-23-5. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTPS62260DDCT
Texas Instruments · DC-DC Converters · TSOT-23-5
TPS62260DDCT from Texas Instruments, in a TSOT-23-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VIN | power_in | VIN power supply pin. |
| 2 | GND | power_in | GND supply pin. |
| 3 | EN | input | Enable pin: pulling low forces the device into shutdown mode, pulling high enables the device; this pin must be terminated. |
| 4 | FB | input | Feedback pin for the internal regulation loop; connect the external resistor divider to this pin (for fixed output voltage options, connect directly to the output capacitor). |
| 5 | SW | output | Switch pin connected to the internal MOSFET switches; connect the external inductor between this terminal and the output capacitor. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | TSOT-23-5 |
| Category | Power Supply Chip |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage range | VIN | 2.3 | 6 | V | 5 | ||
| Output current | IOUT | 600 | mA | VIN 2.5 V to 6 V | 5 | ||
| Output current | IOUT | 300 | mA | VIN 2.3 V to 2.5 V | 5 | ||
| Output current | IOUT | 150 | mA | VIN 2 V to 2.3 V | 5 | ||
| Shutdown current | ISD | 0.1 | 1 | μA | EN = GND | 5 | |
| Undervoltage lockout threshold falling | UVLO | 1.85 | V | Falling | 5 | ||
| Undervoltage lockout threshold rising | UVLO | 1.95 | V | Rising | 5 | ||
| High level input voltage, EN, MODE | VIH | 1 | V | 2 V ≤ VIN ≤ 6 V | 5 | ||
| Low level input voltage, EN, MODE | VIL | 0 | 0.4 | V | 2 V ≤ VIN ≤ 6 V | 5 | |
| Input bias current, EN, MODE | IIN | 0.01 | 1 | μA | EN, MODE = GND or VIN | 5 | |
| High side MOSFET on-resistance | RDS(on) | 240 | 480 | mΩ | VIN = VGS = 3.6 V, TA = 25°C | 5 | |
| Low side MOSFET on-resistance | RDS(on) | 185 | 380 | mΩ | VIN = VGS = 3.6 V, TA = 25°C | 5 | |
| Forward current limit MOSFET high side and low side | ILIMF | 0.8 | 1 | 1.2 | A | VIN = VGS = 3.6 V | 5 |
| Oscillator frequency | fSW | 2 | 2.25 | 2.5 | MHz | 2 V ≤ VIN ≤ 6 V | 5 |
| Adjustable output voltage range | VOUT | 0.6 | 6 | V | Max is VIN | 5 | |
| Feedback voltage PWM mode | VFB | -1.5 | 0 | 1.5 | % | MODE = VIN, PWM operation, VFB = VOUT, 2.5 V ≤ VIN ≤ 6 V, 0 mA ≤ IOUT ≤ 600 mA | 5 |
| Leakage current into SW pin | Ilkg | 0.1 | 1 | μA | VIN = 3.6 V, VIN = VOUT = VSW, EN = GND | 5 | |
| Operating quiescent current, PFM not switching | IQ | 15 | μA | IOUT = 0 mA, PFM mode enabled (MODE = GND) device not switching | 5 | ||
| Operating quiescent current, PFM switching | IQ | 18.5 | μA | IOUT = 0 mA, MODE = GND, device switching, VOUT = 1.8 V | 5 | ||
| Operating quiescent current, PWM | IQ | 3.8 | mA | IOUT = 0 mA, MODE = VIN, PWM operation, VOUT = 1.8 V, VIN = 3 V | 5 | ||
| Thermal shutdown | TSD | 140 | °C | Increasing junction temperature | 5 | ||
| Thermal shutdown hysteresis | TSD | 20 | °C | Decreasing junction temperature | 5 | ||
| Reference voltage | VREF | 600 | mV | 5 | |||
| Load regulation PWM mode | -0.5 | %/A | 5 | ||||
| Start-up time | tStart Up | 500 | μs | Time from active EN to reach 95% of VOUT nominal | 5 | ||
| VOUT ramp-up time | tRamp | 250 | μs | Time to ramp from 5% to 95% of VOUT | 5 | ||
| Input voltage | VIN | -0.3 | 7 | V | 4 | ||
| Voltage at EN, MODE | -0.3 | 7 | V | VIN +0.3 ≤ 7 | 4 | ||
| Voltage on SW | -0.3 | 7 | V | 4 | |||
| Maximum operating junction temperature | TJ | -40 | 125 | °C | 4 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 4 | ||
| ESD HBM | V(ESD) | -2000 | 2000 | V | Human body model, all pins | 4 | |
| ESD CDM | V(ESD) | -1000 | 1000 | V | Charged device model, all pins | 4 | |
| Supply voltage | VIN | 2 | 6 | V | 4 | ||
| Output voltage range for adjustable voltage | 0.6 | 6 | V | Max is VIN | 4 | ||
| Operating ambient temperature | TA | -40 | 85 | °C | 4 | ||
| Operating junction temperature | TJ | -40 | 125 | °C | 4 | ||
| Junction-to-ambient thermal resistance | RθJA | 226.9 | °C/W | DDC [SOT] 5 pins | 4 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 40.7 | °C/W | DDC [SOT] 5 pins | 4 | ||
| Junction-to-board thermal resistance | RθJB | 48.8 | °C/W | DDC [SOT] 5 pins | 4 | ||
| Junction-to-top characterization parameter | ψJT | 0.5 | °C/W | DDC [SOT] 5 pins | 4 | ||
| Junction-to-board characterization parameter | ψJB | 48.1 | °C/W | DDC [SOT] 5 pins | 4 |
CAD (KiCad official)
- Symbol:
TPS62260DDCT - Footprint:
Package_TO_SOT_SMD:TSOT-23-5 - 3D model: TSOT-23-5 (KiCad packages3D, STEP)
- 3D model files:
tps62260ddct-etched.step/tps62260ddct-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tps62260ddct.step/tps62260ddct.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (35 pp, sha256
997d80438f1f04ee, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).