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tps62250drvr: specified limits as data (metadata.characteristics, 34 rows from the datasheet)

Ray ·03d9419321 ·17d ago ·parent 25283f3
2 files changed +457−1
README.md+41
@@ -25,6 +25,47 @@ TPS62250DRVR from Texas Instruments, in a WSON-6-EP(2x2). Pinout and pin descrip | Category | Power Management (PMIC) | | Pins | 7 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Input voltage range (absolute maximum) | VIN | -0.3 |  | 7 | V |  | 2 |+| Voltage range on SW (absolute maximum) | VSW | -0.3 |  | 7 | V |  | 2 |+| Voltage range at EN, MODE (absolute maximum) | VEN, VMODE | -0.3 |  |  | V | VIN + 0.3, ≤ 7 V | 2 |+| ESD rating, human body model | HBM |  |  | 2 | kV | Human body model | 2 |+| ESD rating, charge device model | CDM |  |  | 1 | kV | Charge device model | 2 |+| ESD rating, machine model | MM |  |  | 200 | V | Machine model | 2 |+| Maximum operating junction temperature | TJ | -40 |  | 125 | °C |  | 2 |+| Storage temperature range | Tstg | -65 |  | 150 | °C |  | 2 |+| Supply voltage | VIN | 2 |  | 6 | V |  | 2 |+| Operating ambient temperature | TA | -40 |  | 85 | °C |  | 2 |+| Operating junction temperature | TJ | -40 |  | 125 | °C |  | 2 |+| Input voltage range | VIN | 2.3 |  | 6 | V |  | 3 |+| Operating quiescent current, device switching | IQ |  |  | 18.5 | µA | IOUT = 0 mA, PFM mode enabled (MODE = GND), device switching, VOUT = 1.8 V | 3 |+| Operating quiescent current, PWM operation | IQ |  | 3.8 |  | mA | IOUT = 0 mA, switching with no load (MODE = VIN), PWM operation, VOUT = 1.8 V, VIN = 3 V | 3 |+| Shutdown current | ISD |  | 0.1 | 1 | µA | EN = GND | 3 |+| Low level input voltage, EN, MODE | VIL | 0 |  | 0.4 | V | 2 V ≤ VIN ≤ 6 V | 3 |+| High level input voltage, EN, MODE | VIH | 1 |  |  | V | 2 V ≤ VIN ≤ 6 V; max printed as VIN | 3 |+| Input bias current, EN, MODE | IIN |  | 0.01 | 1 | µA | EN, MODE = GND or VIN | 3 |+| High side MOSFET on-resistance | RDS(on) |  | 240 | 480 | mΩ | VIN = VGS = 3.6 V, TA = 25°C | 3 |+| Low side MOSFET on-resistance | RDS(on) |  | 185 | 380 | mΩ | VIN = VGS = 3.6 V, TA = 25°C | 3 |+| Forward current limit MOSFET, high-side and low side | ILIMF | 0.8 | 1 | 1.2 | A | VIN = VGS = 3.6 V | 3 |+| Oscillator frequency | fSW | 2 | 2.25 | 2.5 | MHz | 2 V ≤ VIN ≤ 6 V | 3 |+| Feedback voltage, PWM mode (fixed output voltage versions) | VFB | -1.5 | 0 | 1.5 | % | MODE = VIN, PWM operation, for fixed output voltage versions, 2.5 V ≤ VIN ≤ 6 V, 0 mA ≤ IOUT ≤ 600 mA | 3 |+| Undervoltage lockout threshold, falling | UVLO |  | 1.85 |  | V | Falling | 3 |+| Undervoltage lockout threshold, rising | UVLO |  | 1.95 |  | V | Rising | 3 |+| Thermal shutdown | TSD |  | 140 |  | °C | Increasing junction temperature | 3 |+| Thermal shutdown hysteresis | TSD |  | 20 |  | °C | Decreasing junction temperature | 3 |+| Reference voltage | Vref |  | 600 |  | mV |  | 3 |+| Feedback voltage, PFM mode | VFB |  | 1 |  | % | MODE = GND, device in PFM mode, voltage positioning active | 3 |+| Load regulation, PWM mode |  |  | -0.5 |  | %/A | PWM Mode | 3 |+| Start-up time | tStart Up |  | 500 |  | µs | Time from active EN to reach 95% of VOUT nominal | 3 |+| VOUT ramp up time | tRamp |  | 250 |  | µs | Time to ramp from 5% to 95% of VOUT | 3 |+| Leakage current into SW pin | Ilkg |  | 0.1 | 1 | µA | VIN = 3.6 V, VIN = VOUT = VSW, EN = GND | 3 |+| Junction-to-ambient thermal resistance, DRV package | RθJA |  | 76 |  | °C/W | DRV package | 2 |+ ## CAD (KiCad official)  - Symbol: `TPS62250DRVR`
page.json+416−1
@@ -175,6 +175,421 @@       "Package": "WSON-6-EP(2x2)",       "Category": "Power Management (PMIC)",       "Pins": "7"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "79c5c48f91e1e991",+      "rows": [+        {+          "name": "Input voltage range (absolute maximum)",+          "symbol": "VIN",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -0.3,+          "typ": null,+          "max": 7,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Voltage range on SW (absolute maximum)",+          "symbol": "VSW",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -0.3,+          "typ": null,+          "max": 7,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Voltage range at EN, MODE (absolute maximum)",+          "symbol": "VEN, VMODE",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -0.3,+          "typ": null,+          "max": null,+          "conditions": "VIN + 0.3, ≤ 7 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "ESD rating, human body model",+          "symbol": "HBM",+          "kind": "absolute_maximum",+          "unit": "kV",+          "min": null,+          "typ": null,+          "max": 2,+          "conditions": "Human body model",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "ESD rating, charge device model",+          "symbol": "CDM",+          "kind": "absolute_maximum",+          "unit": "kV",+          "min": null,+          "typ": null,+          "max": 1,+          "conditions": "Charge device model",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "ESD rating, machine model",+          "symbol": "MM",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 200,+          "conditions": "Machine model",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Maximum operating junction temperature",+          "symbol": "TJ",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -40,+          "typ": null,+          "max": 125,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Storage temperature range",+          "symbol": "Tstg",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -65,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Supply voltage",+          "symbol": "VIN",+          "kind": "recommended_operating",+          "unit": "V",+          "min": 2,+          "typ": null,+          "max": 6,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Operating ambient temperature",+          "symbol": "TA",+          "kind": "recommended_operating",+          "unit": "°C",+          "min": -40,+          "typ": null,+          "max": 85,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Operating junction temperature",+          "symbol": "TJ",+          "kind": "recommended_operating",+          "unit": "°C",+          "min": -40,+          "typ": null,+          "max": 125,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Input voltage range",+          "symbol": "VIN",+          "kind": "electrical",+          "unit": "V",+          "min": 2.3,+          "typ": null,+          "max": 6,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Operating quiescent current, device switching",+          "symbol": "IQ",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": null,+          "max": 18.5,+          "conditions": "IOUT = 0 mA, PFM mode enabled (MODE = GND), device switching, VOUT = 1.8 V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Operating quiescent current, PWM operation",+          "symbol": "IQ",+          "kind": "electrical",+          "unit": "mA",+          "min": null,+          "typ": 3.8,+          "max": null,+          "conditions": "IOUT = 0 mA, switching with no load (MODE = VIN), PWM operation, VOUT = 1.8 V, VIN = 3 V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Shutdown current",+          "symbol": "ISD",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": 0.1,+          "max": 1,+          "conditions": "EN = GND",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Low level input voltage, EN, MODE",+          "symbol": "VIL",+          "kind": "electrical",+          "unit": "V",+          "min": 0,+          "typ": null,+          "max": 0.4,+          "conditions": "2 V ≤ VIN ≤ 6 V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "High level input voltage, EN, MODE",+          "symbol": "VIH",+          "kind": "electrical",+          "unit": "V",+          "min": 1,+          "typ": null,+          "max": null,+          "conditions": "2 V ≤ VIN ≤ 6 V; max printed as VIN",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Input bias current, EN, MODE",+          "symbol": "IIN",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": 0.01,+          "max": 1,+          "conditions": "EN, MODE = GND or VIN",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "High side MOSFET on-resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 240,+          "max": 480,+          "conditions": "VIN = VGS = 3.6 V, TA = 25°C",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Low side MOSFET on-resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "mΩ",+          "min": null,+          "typ": 185,+          "max": 380,+          "conditions": "VIN = VGS = 3.6 V, TA = 25°C",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Forward current limit MOSFET, high-side and low side",+          "symbol": "ILIMF",+          "kind": "electrical",+          "unit": "A",+          "min": 0.8,+          "typ": 1,+          "max": 1.2,+          "conditions": "VIN = VGS = 3.6 V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Oscillator frequency",+          "symbol": "fSW",+          "kind": "electrical",+          "unit": "MHz",+          "min": 2,+          "typ": 2.25,+          "max": 2.5,+          "conditions": "2 V ≤ VIN ≤ 6 V",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Feedback voltage, PWM mode (fixed output voltage versions)",+          "symbol": "VFB",+          "kind": "electrical",+          "unit": "%",+          "min": -1.5,+          "typ": 0,+          "max": 1.5,+          "conditions": "MODE = VIN, PWM operation, for fixed output voltage versions, 2.5 V ≤ VIN ≤ 6 V, 0 mA ≤ IOUT ≤ 600 mA",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Undervoltage lockout threshold, falling",+          "symbol": "UVLO",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": 1.85,+          "max": null,+          "conditions": "Falling",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Undervoltage lockout threshold, rising",+          "symbol": "UVLO",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": 1.95,+          "max": null,+          "conditions": "Rising",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Thermal shutdown",+          "symbol": "TSD",+          "kind": "electrical",+          "unit": "°C",+          "min": null,+          "typ": 140,+          "max": null,+          "conditions": "Increasing junction temperature",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Thermal shutdown hysteresis",+          "symbol": "TSD",+          "kind": "electrical",+          "unit": "°C",+          "min": null,+          "typ": 20,+          "max": null,+          "conditions": "Decreasing junction temperature",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Reference voltage",+          "symbol": "Vref",+          "kind": "electrical",+          "unit": "mV",+          "min": null,+          "typ": 600,+          "max": null,+          "conditions": "",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Feedback voltage, PFM mode",+          "symbol": "VFB",+          "kind": "electrical",+          "unit": "%",+          "min": null,+          "typ": 1,+          "max": null,+          "conditions": "MODE = GND, device in PFM mode, voltage positioning active",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Load regulation, PWM mode",+          "symbol": "",+          "kind": "electrical",+          "unit": "%/A",+          "min": null,+          "typ": -0.5,+          "max": null,+          "conditions": "PWM Mode",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Start-up time",+          "symbol": "tStart Up",+          "kind": "electrical",+          "unit": "µs",+          "min": null,+          "typ": 500,+          "max": null,+          "conditions": "Time from active EN to reach 95% of VOUT nominal",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "VOUT ramp up time",+          "symbol": "tRamp",+          "kind": "electrical",+          "unit": "µs",+          "min": null,+          "typ": 250,+          "max": null,+          "conditions": "Time to ramp from 5% to 95% of VOUT",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Leakage current into SW pin",+          "symbol": "Ilkg",+          "kind": "electrical",+          "unit": "µA",+          "min": null,+          "typ": 0.1,+          "max": 1,+          "conditions": "VIN = 3.6 V, VIN = VOUT = VSW, EN = GND",+          "source_page": 3,+          "source": "datasheet"+        },+        {+          "name": "Junction-to-ambient thermal resistance, DRV package",+          "symbol": "RθJA",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": 76,+          "max": null,+          "conditions": "DRV package",+          "source_page": 2,+          "source": "datasheet"+        }+      ]     }   },   "variants": [],@@ -216,4 +631,4 @@   "visibility": {     "public": true   }-}\ No newline at end of file+}