TPS62231TDRYRQ1 from Texas Instruments, in a XSON-6(1x1.5). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	MODE	input	When MODE is high the device is forced into PWM operation, and when low power save mode is enabled with automatic PFM-to-PWM transition; this pin must be terminated.
2	SW	output	Switch pin connected to the internal MOSFET switches, to which the inductor must be connected.
3	VIN	power_in	VIN power supply pin, operating from 2.05 V to 6 V as stated in the recommended operating conditions.
4	GND	power_in	Ground supply pin of the device.
5	EN	input	Enable pin: pulling low forces shutdown mode and pulling high enables the device; this pin must be terminated.
6	FB	input	Feedback pin for the internal regulation loop, which must be connected directly to the output capacitor.

Key specifications

Parameter	Value
Manufacturer	Texas Instruments
Package	XSON-6(1x1.5)
Category	Power Management (PMIC)
Pins	6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Voltage at VIN and SW pin		-0.3		7	V		3
Voltage at FB pin		-0.3		3.6	V		3
Maximum operating junction temperature	TJ	-40		125	°C		3
Storage temperature	Tstg	-65		150	°C		3
Voltage at EN, MODE pin		-0.3			V		3
Supply voltage, VIN	VIN	2.05		6	V		4
Effective output inductance		0.7		4.3	μH		4
Effective output capacitance		2	4.7	15	μF		4
Recommended minimum supply voltage		3		3.6	V	VOUT ≤ (VIN, 1 V), 500-mA maximum IOUT	4
Recommended minimum supply voltage		2.5		2.7	V	350-mA maximum IOUT	4
Recommended minimum supply voltage		2.05			V	VOUT ≤ 1.8 V, 60-mA maximum output current	4
Operating junction temperature	TJ	-40		125	°C		4
Ambient temperature	TA	-40		105	°C		4
Input voltage range	VIN	2.05		6	V		5
Quiescent current, device not switching	IQ		22	40	μA	IOUT = 0 mA. PFM mode enabled (MODE = 0), device not switching	5
Quiescent current, device switching	IQ		25		μA	IOUT = 0 mA. PFM mode enabled (MODE = 0), device switching, VIN = 3.6 V, VOUT = 1.2 V	5
Quiescent current, PWM no load	IQ		3		mA	IOUT = 0 mA. Switching with no load (MODE/DATA = VIN), PWM operation, VOUT = 1.8 V, L = 2.2 μH	5
Shutdown current	ISD		0.1	1	μA	EN = GND	5
Undervoltage-lockout threshold, falling	UVLO		1.8	1.9	V	Falling	5
Undervoltage-lockout threshold, rising	UVLO		1.9	2.05	V	Rising	5
Threshold for detecting high, EN, MODE	VIH TH	0.8		1	V	2.05 V ≤ VIN ≤ 6 V, rising edge	5
Threshold for detecting low hysteresis, EN, MODE	VIL TH HYS	0.4		0.6	V	2.05 V ≤ VIN ≤ 6 V, falling edge	5
Input bias current, EN, MODE	IIN		0.01	0.5	μA	EN, MODE = GND or VIN = 3.6 V	5
High-side MOSFET on-resistance	RDS(ON)		600	850	mΩ	VIN = 3.6 V, TJmax = 105°C; RDS(ON) max value	5
Low-side MOSFET on-resistance	RDS(ON)		350	480	mΩ	VIN = 3.6 V, TJmax = 105°C; RDS(ON) max value	5
Forward current-limit MOSFET high side	ILIMF	690	850	1050	mA	VIN = 3.6 V, open loop	5
Forward current-limit MOSFET low side	ILIMF	550	840	1220	mA	VIN = 3.6 V, open loop	5
Thermal shutdown	TSD		150		°C	Increasing junction temperature	5
Thermal shutdown hysteresis			20		°C	Decreasing junction temperature	5
Minimum on time	tONmin		135		ns	VIN = 3.6 V, VOUT = 1.8 V, Mode = high, IOUT = 0	5
Minimum off time	tOFFmin		40		ns		5
Internal reference voltage	VREF		0.7		V		5
Output voltage accuracy in PFM mode	VOUT		0		%	VIN = 3.6 V, Mode = GND, device operating in PFM Mode, IOUT = 0 mA	5
Output voltage accuracy at TA = 25°C	VOUT	-2		2	%	VIN = 3.6 V, MODE = VIN, IOUT = 0 mA, TA = 25°C	5
Output voltage accuracy at TA = -40°C to 105°C	VOUT	-2.5		2.5	%	VIN = 3.6 V, MODE = VIN, IOUT = 0 mA, TA = -40°C to 105°C	5
DC output voltage load regulation			0.001		%/mA	PWM operation, Mode = VIN = 3.6 V, VOUT = 1.8 V	5
DC output voltage line regulation			0		%/V	IOUT = 0 mA, Mode = VIN, 2.05 V ≤ VIN ≤ 6 V	5
Start-up time	tStart		100		μs	Time from active EN to VOUT = 1.8 V, VIN = 3.6 V, 10-Ω load	5
Leakage current into SW pin	ILK_SW		0.1	0.5	μA	VIN = VOUT = VSW = 3.6 V, EN = GND	5
Junction-to-ambient thermal resistance	RθJA		294.5		°C/W		4
Junction-to-case (top) thermal resistance	RθJC(top)		166.5		°C/W		4
Junction-to-board thermal resistance	RθJB		166.1		°C/W		4
Junction-to-top characterization parameter	ψJT		27.3		°C/W		4
Junction-to-board characterization parameter	ψJB		159.9		°C/W		4

CAD (KiCad official)

Symbol: TPS62231TDRYRQ1
Footprint: Package_SON:Texas_USON-6_1x1.45mm_P0.5mm_SMD
3D model: XSON-6(1x1.5) (KiCad packages3D, STEP)
3D model files: tps62231tdryrq1-etched.step / tps62231tdryrq1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps62231tdryrq1.step / tps62231tdryrq1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Texas Instruments datasheet (26 pp, sha256 b34d12888ea5a226, retrieved 2026-11-05, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

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TPS62231TDRYRQ1

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