component
TPS622314TDRYRQ1
Public Made by Adomby adom
Texas Instruments DC-DC Converters, XSON-6(1x1.5). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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tps622314tdryrq1: specified limits as data (metadata.characteristics, 33 rows from the datasheet)
2 files changed
+444−1
README.md+40@@ -24,6 +24,46 @@ TPS622314TDRYRQ1 from Texas Instruments, in a XSON-6(1x1.5). Pinout and pin desc | Category | Power Supply Chip | | Pins | 6 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Voltage at VIN and SW Pin | | -0.3 | | 7 | V | | 2 |+| Voltage at EN, MODE Pin | VI | -0.3 | | | V | Max printed as VIN +0.3, ≤7 | 2 |+| Voltage at FB Pin | | -0.3 | | 3.6 | V | | 2 |+| ESD rating, Human Body Model (HBM) | | | | 2 | kV | Human Body Model (HBM) | 2 |+| ESD rating, Charged Device Model (CDM) | | | | 1 | kV | Charged Device Model (CDM) | 2 |+| ESD rating, Machine Model (MM) | | | | 200 | V | Machine Model (MM) | 2 |+| Maximum operating junction temperature | TJ | -40 | | 125 | °C | | 2 |+| Storage temperature range | Tstg | -65 | | 150 | °C | | 2 |+| Power rating, 1x1.5 SON | | | | 420 | mW | TA ≤ 25°C | 2 |+| Derating factor, 1x1.5 SON | | | 4.2 | | mW/°C | Above TA = 25°C | 2 |+| Junction-to-ambient thermal resistance (1x1.5 SON) | RθJA | | 234 | | °C/W | High-K board, 4 layers per JESD51-7 | 2 |+| Supply voltage | VIN | 2.05 | | 6 | V | TA = –40 to 105°C | 3 |+| Effective inductance | | | 2.2 | | μH | | 3 |+| Effective capacitance | | 2 | 4.7 | | μF | | 3 |+| Recommended minimum supply voltage (500 mA) | | | 3 | 3.6 | V | 500 mA maximum IOUT; VOUT ≤ VIN -1 V | 3 |+| Recommended minimum supply voltage (350 mA) | | | 2.5 | 2.7 | V | 350 mA maximum IOUT | 3 |+| Recommended minimum supply voltage (60 mA, VOUT ≤ 1.8 V) | | | 2.05 | | V | VOUT ≤ 1.8V; 60 mA maximum output current | 3 |+| Operating junction temperature range | TJ | -40 | | 125 | °C | | 3 |+| Input voltage range | VIN | 2.05 | | 6 | V | | 4 |+| Operating quiescent current | IQ | | 22 | 40 | μA | IOUT = 0 mA, PFM mode enabled (Mode = 0), device not switching | 4 |+| Shutdown current | ISD | | 0.1 | 1 | μA | EN = GND | 4 |+| Undervoltage lockout threshold, falling | | | 1.8 | 1.9 | V | Falling | 4 |+| Undervoltage lockout threshold, rising | | | 1.9 | 2.05 | V | Rising | 4 |+| Threshold for detecting high, EN, MODE | VIH TH | | 0.8 | 1 | V | 2.05 V ≤ VIN ≤ 6V, rising edge | 4 |+| Threshold for detecting low hysteresis, EN, MODE | VIL TH HYS | | 0.4 | 0.6 | V | 2.05 V ≤ VIN ≤ 6V, falling edge | 4 |+| Input bias current, EN, MODE | IIN | | 0.01 | 0.5 | μA | EN, MODE = GND or VIN = 3.6V | 4 |+| High side MOSFET on-resistance | RDS(ON) | | 600 | 850 | mΩ | VIN = 3.6V, TJmax = 105°C | 4 |+| Low side MOSFET on-resistance | RDS(ON) | | 350 | 480 | mΩ | VIN = 3.6V, TJmax = 105°C | 4 |+| Forward current limit MOSFET high side | I high-side LIMF | 690 | 850 | 1050 | mA | VIN = 3.6V, open loop | 4 |+| Forward current limit MOSFET low side | | 550 | 840 | 1220 | mA | | 4 |+| Leakage current into SW pin | ILK_SW | | 0.1 | 0.5 | μA | VIN = VOUT = VSW = 3.6 V, EN = GND | 4 |+| Output voltage accuracy (MODE = VIN) | VOUT | -2 | | 2 | % | VIN = 3.6V, MODE = VIN, TA = 25°C | 4 |+| Output voltage accuracy (full temperature range) | VOUT | -2.5 | | 2.5 | % | IOUT = 0 mA, TA = –40°C to 105°C | 4 |+ ## CAD (KiCad official) - Symbol: `TPS622314TDRYRQ1`
page.json+404−1@@ -168,6 +168,409 @@ "Package": "XSON-6(1x1.5)", "Category": "Power Supply Chip", "Pins": "6"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "841c3edc96f6a799",+ "rows": [+ {+ "name": "Voltage at VIN and SW Pin",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": 7,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Voltage at EN, MODE Pin",+ "symbol": "VI",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": null,+ "conditions": "Max printed as VIN +0.3, ≤7",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Voltage at FB Pin",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": 3.6,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "ESD rating, Human Body Model (HBM)",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "kV",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "Human Body Model (HBM)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "ESD rating, Charged Device Model (CDM)",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "kV",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Charged Device Model (CDM)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "ESD rating, Machine Model (MM)",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "Machine Model (MM)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum operating junction temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -65,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power rating, 1x1.5 SON",+ "symbol": "",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 420,+ "conditions": "TA ≤ 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Derating factor, 1x1.5 SON",+ "symbol": "",+ "kind": "thermal",+ "unit": "mW/°C",+ "min": null,+ "typ": 4.2,+ "max": null,+ "conditions": "Above TA = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-ambient thermal resistance (1x1.5 SON)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 234,+ "max": null,+ "conditions": "High-K board, 4 layers per JESD51-7",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Supply voltage",+ "symbol": "VIN",+ "kind": "recommended_operating",+ "unit": "V",+ "min": 2.05,+ "typ": null,+ "max": 6,+ "conditions": "TA = –40 to 105°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Effective inductance",+ "symbol": "",+ "kind": "recommended_operating",+ "unit": "μH",+ "min": null,+ "typ": 2.2,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Effective capacitance",+ "symbol": "",+ "kind": "recommended_operating",+ "unit": "μF",+ "min": 2,+ "typ": 4.7,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Recommended minimum supply voltage (500 mA)",+ "symbol": "",+ "kind": "recommended_operating",+ "unit": "V",+ "min": null,+ "typ": 3,+ "max": 3.6,+ "conditions": "500 mA maximum IOUT; VOUT ≤ VIN -1 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Recommended minimum supply voltage (350 mA)",+ "symbol": "",+ "kind": "recommended_operating",+ "unit": "V",+ "min": null,+ "typ": 2.5,+ "max": 2.7,+ "conditions": "350 mA maximum IOUT",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Recommended minimum supply voltage (60 mA, VOUT ≤ 1.8 V)",+ "symbol": "",+ "kind": "recommended_operating",+ "unit": "V",+ "min": null,+ "typ": 2.05,+ "max": null,+ "conditions": "VOUT ≤ 1.8V; 60 mA maximum output current",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "TJ",+ "kind": "recommended_operating",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Input voltage range",+ "symbol": "VIN",+ "kind": "electrical",+ "unit": "V",+ "min": 2.05,+ "typ": null,+ "max": 6,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Operating quiescent current",+ "symbol": "IQ",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": 22,+ "max": 40,+ "conditions": "IOUT = 0 mA, PFM mode enabled (Mode = 0), device not switching",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Shutdown current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": 0.1,+ "max": 1,+ "conditions": "EN = GND",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Undervoltage lockout threshold, falling",+ "symbol": "",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.8,+ "max": 1.9,+ "conditions": "Falling",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Undervoltage lockout threshold, rising",+ "symbol": "",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.9,+ "max": 2.05,+ "conditions": "Rising",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Threshold for detecting high, EN, MODE",+ "symbol": "VIH TH",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1,+ "conditions": "2.05 V ≤ VIN ≤ 6V, rising edge",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Threshold for detecting low hysteresis, EN, MODE",+ "symbol": "VIL TH HYS",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.4,+ "max": 0.6,+ "conditions": "2.05 V ≤ VIN ≤ 6V, falling edge",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Input bias current, EN, MODE",+ "symbol": "IIN",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": 0.01,+ "max": 0.5,+ "conditions": "EN, MODE = GND or VIN = 3.6V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "High side MOSFET on-resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 600,+ "max": 850,+ "conditions": "VIN = 3.6V, TJmax = 105°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Low side MOSFET on-resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 350,+ "max": 480,+ "conditions": "VIN = 3.6V, TJmax = 105°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Forward current limit MOSFET high side",+ "symbol": "I high-side LIMF",+ "kind": "electrical",+ "unit": "mA",+ "min": 690,+ "typ": 850,+ "max": 1050,+ "conditions": "VIN = 3.6V, open loop",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Forward current limit MOSFET low side",+ "symbol": "",+ "kind": "electrical",+ "unit": "mA",+ "min": 550,+ "typ": 840,+ "max": 1220,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Leakage current into SW pin",+ "symbol": "ILK_SW",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": 0.1,+ "max": 0.5,+ "conditions": "VIN = VOUT = VSW = 3.6 V, EN = GND",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Output voltage accuracy (MODE = VIN)",+ "symbol": "VOUT",+ "kind": "tolerance",+ "unit": "%",+ "min": -2,+ "typ": null,+ "max": 2,+ "conditions": "VIN = 3.6V, MODE = VIN, TA = 25°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Output voltage accuracy (full temperature range)",+ "symbol": "VOUT",+ "kind": "tolerance",+ "unit": "%",+ "min": -2.5,+ "typ": null,+ "max": 2.5,+ "conditions": "IOUT = 0 mA, TA = –40°C to 105°C",+ "source_page": 4,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -209,4 +612,4 @@ "visibility": { "public": true }-}+}