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Contents

README

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TPS62204DBVT

Texas Instruments · DC-DC Converters · SOT-23-5

TPS62204DBVT from Texas Instruments, in a SOT-23-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VI power_in Supply voltage pin; the supply voltage range is 2.5 V to 6 V.
2 GND power_in Ground pin, the network ground reference for the device.
3 EN input Enable pin; pulling it to ground forces shutdown mode, pulling it to VI enables the device, and it must not be left floating.
4 FB input Feedback pin; connect it directly to the output for the fixed output voltage version, or to an external resistor divider for the adjustable version.
5 SW bidirectional Switch pin connected to the internal MOSFET switches; the inductor connects to this pin.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOT-23-5
Category Power Management (PMIC)
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltages VI -0.3 7 V 3
Voltages on pins SW, EN, FB -0.3 V 3
Operating junction temperature TJ -40 150 °C 3
Storage temperature Tstg -65 150 °C 3
Supply voltage VI 2.5 6 V 4
Output current IO 300 mA 4
Inductor L 4.7 10 µH 4
Input capacitor CI 4.7 µF 4
Output capacitor CO 10 µF 4
Operating ambient temperature TA -40 85 °C 4
Operating junction temperature TJ -40 125 °C 4
Junction-to-ambient thermal resistance RθJA 220 °C/W 4
Junction-to-case (top) thermal resistance RθJC(top) 125 °C/W 4
Junction-to-board thermal resistance RθJB 36 °C/W 4
Junction-to-top characterization parameter ψJT 14 °C/W 4
Junction-to-board characterization parameter ψJB 35 °C/W 4
Input voltage VI 2.5 6 V 5
Operating quiescent current IQ 15 30 µA IO = 0 mA, Device is not switching 5
Shutdown supply current 0.1 1 µA EN = GND 5
Undervoltage lockout threshold 1.5 2 V 5
EN high level input voltage V(EN) 1.3 V 5
EN low level input voltage V(EN) 0.4 V 5
EN input bias current I(EN) 0.01 0.1 µA EN = GND or VIN 5
P-channel MOSFET on-resistance rds(ON) 530 690 mΩ VIN = VGS = 3.6 V 5
P-channel MOSFET on-resistance rds(ON) 670 850 mΩ VIN = VGS = 2.5 V 5
N-channel MOSFET on-resistance rds(ON) 430 540 mΩ VIN = VGS = 3.6 V 5
N-channel MOSFET on-resistance rds(ON) 530 660 mΩ VIN = VGS = 2.5 V 5
P-channel leakage current Ilkg_(P) 0.1 1 µA VDS = 6.0 V 5
N-channel leakage current Ilkg_(N) 0.1 1 µA VDS = 6.0 V 5
P-channel current limit I(LIM) 380 480 670 mA 2.5 V < Vin < 6.0 V 5
Switching frequency fS 650 1000 1500 kHz 5
Feedback voltage, TPS62204 (1.6 V), no load 0 3 % VI = 2.5 V to 6 V, IO = 0 mA 5
Feedback voltage, TPS62204 (1.6 V), with load -3 3 % VI = 2.5 V to 6 V, 0 mA ≤ IO ≤ 300 mA 5
Line regulation 0.26 %/V VI = 2.5 V to 6 V, IO = 10 mA 5
Load regulation 0.0014 %/mA IO = 100 mA to 300 mA 5
Leakage current into SW pin Ilkg 0.1 1 µA Vin > Vout, 0 V ≤ Vsw ≤ Vin 5
Reverse leakage current into pin SW Ilkg(Rev) 0.1 1 µA Vin = open, EN = GND, VSW = 6 V 5

CAD (KiCad official)

  • Symbol: TPS62204DBVT
  • Footprint: Package_TO_SOT_SMD:SOT-23-5
  • 3D model: SOT-23-5 (KiCad packages3D, STEP)
  • 3D model files: tps62204dbvt-etched.step / tps62204dbvt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps62204dbvt.step / tps62204dbvt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (30 pp, sha256 f6ac7e529beda007, retrieved 2026-11-06, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF