# TPS62160QDSGTQ1

**Texas Instruments** · DC-DC Converters · WSON-8-EP(2x2)

TPS62160QDSGTQ1 from Texas Instruments, in a WSON-8-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | PGND | power_in | Power ground pin for the power stage of the converter. |
| 2 | VIN | power_in | Supply voltage input with a recommended operating range of 3 V to 17 V and an absolute maximum of 20 V. |
| 3 | EN | input | Enable input where high enables the device and low disables it; the pin voltage is limited to -0.3 V to VIN+0.3 V. |
| 4 | AGND | power_in | Analog ground pin, which must also be connected to the exposed thermal pad. |
| 5 | FB | input | Voltage feedback input for the adjustable version, connected to a resistive divider; it is recommended to connect FB to AGND on fixed-output versions for improved thermal performance, with an absolute voltage range of -0.3 V to 7 V. |
| 6 | VOS | input | Output voltage sense pin and connection for the control loop circuitry, with an absolute voltage range of -0.3 V to 7 V. |
| 7 | SW | output | Switch node connected to the internal MOSFET switches, where the inductor is connected between SW and the output capacitor; the pin voltage is limited to -0.3 V to VIN+0.3 V. |
| 8 | PG | output | Open-drain power-good output that is high when VOUT is ready and low when VOUT is below nominal regulation, requires a pull-up resistor, goes high impedance when the device is switched off, and has a maximum sink current of 10 mA. |
| 9 | Exposed Thermal Pad | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WSON-8-EP(2x2) |
| Category | Power Management (PMIC) |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VIN supply voltage (absolute maximum) | VIN | -0.3 |  | 20 | V |  | 4 |
| Pin voltage range EN, SW |  | -0.3 |  |  | V |  | 4 |
| Pin voltage range FB, PG, VOS |  | -0.3 |  | 7 | V |  | 4 |
| Power Good sink current |  |  |  | 10 | mA |  | 4 |
| Operating junction temperature range | TJ | -40 |  | 125 | °C |  | 4 |
| Storage temperature range | Tstg | -65 |  | 150 | °C |  | 4 |
| Supply voltage | VIN | 3 |  | 17 | V |  | 4 |
| Output voltage range | VOUT | 0.9 |  | 6 | V |  | 4 |
| Operating junction temperature range | TJ | -40 |  | 125 | °C |  | 4 |
| Input voltage range | VIN | 3 |  | 17 | V |  | 5 |
| Operating quiescent current | IQ |  | 17 | 30 | µA | EN = High, IOUT = 0 mA, Device not switching | 5 |
| Shutdown current | ISD |  | 1.8 | 25 | µA | EN = Low | 5 |
| Undervoltage lockout threshold (falling input voltage) | VUVLO | 2.6 | 2.7 | 2.82 | V | Falling input voltage | 5 |
| High level input threshold voltage (EN) | VEN_H | 0.9 |  |  | V |  | 5 |
| Low level input threshold voltage (EN) | VEN_L |  |  | 0.3 | V |  | 5 |
| Input leakage current (EN) | ILKG_EN |  | 0.01 | 1 | µA | EN = VIN or GND | 5 |
| Power Good threshold voltage, rising | VTH_PG | 92 | 95 | 98 | % | Rising (%VOUT) | 5 |
| Power Good threshold voltage, falling | VTH_PG | 87 | 90 | 93 | % | Falling (%VOUT) | 5 |
| Power Good output low | VOL_PG |  | 0.07 | 0.3 | V | IPG = –2 mA | 5 |
| Input leakage current (PG) | ILKG_PG |  | 1 | 400 | nA | VPG = 1.8 V | 5 |
| High-side MOSFET ON-resistance | RDS(ON) |  | 300 | 600 | mΩ | VIN ≥ 6 V | 5 |
| Low-side MOSFET ON-resistance | RDS(ON) |  | 120 | 200 | mΩ | VIN ≥ 6 V | 5 |
| High-side MOSFET forward current limit | ILIMF | 1.45 | 1.95 | 2.45 | A | VIN = 12 V, TA = 25°C | 5 |
| Pin leakage current (FB) | ILKG_FB |  | 5 | 400 | nA | VFB = 1.2 V | 5 |
| Output voltage range | VOUT | 0.9 |  | 6 | V | VIN ≥ VOUT | 5 |
| Feedback voltage accuracy (PWM mode) |  | -3 |  | 3 | % | PWM Mode operation, VIN ≥ VOUT + 1 V | 5 |
| Feedback voltage accuracy (Power Save Mode) |  | -3 |  | 4 | % VOUT | Power Save Mode operation, COUT = 2x22 µF | 5 |
| Junction-to-ambient thermal resistance (DSG 8-pin) | RθJA |  | 61.8 |  | °C/W |  | 4 |
| Junction-to-case (top) thermal resistance (DSG 8-pin) | RθJC(top) |  | 61.3 |  | °C/W |  | 4 |
| Junction-to-board thermal resistance (DSG 8-pin) | RθJB |  | 15.5 |  | °C/W |  | 4 |
| Junction-to-top characterization parameter (DSG 8-pin) | ψJT |  | 0.4 |  | °C/W |  | 4 |
| Junction-to-board characterization parameter (DSG 8-pin) | ψJB |  | 15.4 |  | °C/W |  | 4 |
| Junction-to-case (bottom) thermal resistance (DSG 8-pin) | RθJC(bot) |  | 8.6 |  | °C/W |  | 4 |

## CAD (KiCad official)

- Symbol: `TPS62160QDSGTQ1`
- Footprint: `Package_SON:WSON-8-1EP_2x2mm_P0.5mm_EP0.9x1.6mm`
- 3D model: WSON-8-EP(2x2) (KiCad packages3D, STEP)
- 3D model files: `tps62160qdsgtq1-etched.step` / `tps62160qdsgtq1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tps62160qdsgtq1.step` / `tps62160qdsgtq1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/cn/lit/gpn/tps62160-q1) (31 pp, sha256 `8426ddbeb039e891`, retrieved 2026-10-11, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tps62160qdsgtq1-datasheet.pdf)