component
TPS62160DSGR
Public Made by Adomby adom
Texas Instruments DC-DC Converters, WSON-8-EP(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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tps62160dsgr: specified limits as data (metadata.characteristics, 42 rows from the datasheet)
2 files changed
+560
README.md+49@@ -27,6 +27,55 @@ TPS62160DSGR from Texas Instruments, in a WSON-8-EP(2x2). Pinout and pin descrip | Category | Power Management (PMIC) | | Pins | 9 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Input voltage range | VIN | 3 | | 17 | V | | 6 |+| Operating quiescent current | IQ | | 17 | 30 | µA | EN = High, IOUT = 0 mA, device not switching | 6 |+| Operating quiescent current | IQ | | 17 | 25 | µA | TJ = -40°C to +85°C | 6 |+| Shutdown current | ISD | | 1.5 | 25 | µA | EN = Low | 6 |+| Shutdown current | ISD | | 1.5 | 4 | µA | TJ = -40°C to +85°C | 6 |+| Undervoltage lockout threshold | VUVLO | 2.6 | 2.7 | 2.82 | V | Falling input voltage | 6 |+| Undervoltage lockout hysteresis | VUVLO | | 180 | | mV | | 6 |+| Thermal shutdown temperature | TSD | | 160 | | °C | Rising temperature | 6 |+| Thermal shutdown hysteresis | TSD | | 20 | | °C | Falling temperature | 6 |+| Input leakage current (EN) | ILKG_EN | | 0.01 | 1 | µA | EN = VIN or GND | 6 |+| Power good threshold voltage, rising | VTH_PG | 92 | 95 | 98 | %VOUT | Rising (%VOUT) | 6 |+| Power good threshold voltage, falling | VTH_PG | 87 | 90 | 93 | %VOUT | Falling (%VOUT) | 6 |+| Power good output low voltage | VOL_PG | | 0.07 | 0.3 | V | IPG = –2 mA | 6 |+| Input leakage current (PG) | ILKG_PG | | 1 | 400 | nA | VPG = 1.8 V | 6 |+| High-side MOSFET ON-resistance | RDS(ON) | | 300 | 600 | mΩ | VIN ≥ 6 V | 6 |+| High-side MOSFET ON-resistance | RDS(ON) | | 430 | | mΩ | VIN = 3 V | 6 |+| Low-side MOSFET ON-resistance | RDS(ON) | | 120 | 200 | mΩ | VIN ≥ 6 V | 6 |+| Low-side MOSFET ON-resistance | RDS(ON) | | 165 | | mΩ | VIN = 3 V | 6 |+| High-side MOSFET forward current limit | ILIMF | 1.45 | 1.95 | 2.45 | A | VIN = 12 V, TJ = 25°C | 6 |+| Internal reference voltage | VREF | | 0.8 | | V | | 6 |+| Pin leakage current (FB) | ILKG_FB | | 5 | 400 | nA | TPS62160, VFB = 1.2 V | 6 |+| Output voltage range (TPS62160) | VOUT | 0.9 | | 6 | V | VIN ≥ VOUT | 6 |+| Initial output voltage accuracy | | -3 | | 3 | % | PWM mode operation, VIN ≥ VOUT + 1 V | 6 |+| Initial output voltage accuracy (power save mode) | | -3.5 | | 4 | % | Power save mode operation, COUT = 22 µF | 6 |+| DC output voltage load regulation | | | 0.05 | | %/A | VIN = 12 V, VOUT = 3.3 V, PWM mode operation | 6 |+| DC output voltage line regulation | | | 0.02 | | %/V | 3 V ≤ VIN ≤ 17 V, VOUT = 3.3 V, IOUT = 0.5 A, PWM mode operation | 6 |+| Supply voltage VIN | VIN | 3 | | 17 | V | | 5 |+| Output voltage VOUT | VOUT | 0.9 | | 6 | V | | 5 |+| Operating junction temperature | TJ | -40 | | 125 | °C | | 5 |+| Pin voltage range VIN | VIN | -0.3 | | 20 | V | | 5 |+| Pin voltage range EN, SW (DC) | | -0.3 | | | V | | 5 |+| Pin voltage range SW (AC) | | -2 | | 24.5 | V | less than 10ns | 5 |+| Pin voltage range FB, PG, VOS | | -0.3 | | 7 | V | | 5 |+| Power good sink current PG | | | | 10 | mA | | 5 |+| Operating junction temperature | TJ | -40 | | 150 | °C | | 5 |+| Storage temperature | Tstg | -65 | | 150 | °C | | 5 |+| Junction-to-ambient thermal resistance (DSG) | RθJA | | 61.8 | | °C/W | | 5 |+| Junction-to-case (top) thermal resistance (DSG) | RθJC(top) | | 61.3 | | °C/W | | 5 |+| Junction-to-board thermal resistance (DSG) | RθJB | | 15.5 | | °C/W | | 5 |+| Junction-to-top characterization parameter (DSG) | ψJT | | 0.4 | | °C/W | | 5 |+| Junction-to-board characterization parameter (DSG) | ψJB | | 15.4 | | °C/W | | 5 |+| Junction-to-case (bottom) thermal resistance (DSG) | RθJC(bot) | | 8.6 | | °C/W | | 5 |+ ## CAD (KiCad official) - Symbol: `TPS62160DSGR`
page.json+511@@ -169,6 +169,517 @@ "Package": "WSON-8-EP(2x2)", "Category": "Power Management (PMIC)", "Pins": "9"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "729fe659c0bb2b33",+ "rows": [+ {+ "name": "Input voltage range",+ "symbol": "VIN",+ "kind": "electrical",+ "unit": "V",+ "min": 3,+ "typ": null,+ "max": 17,+ "conditions": "",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Operating quiescent current",+ "symbol": "IQ",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 17,+ "max": 30,+ "conditions": "EN = High, IOUT = 0 mA, device not switching",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Operating quiescent current",+ "symbol": "IQ",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 17,+ "max": 25,+ "conditions": "TJ = -40°C to +85°C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Shutdown current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 1.5,+ "max": 25,+ "conditions": "EN = Low",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Shutdown current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 1.5,+ "max": 4,+ "conditions": "TJ = -40°C to +85°C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Undervoltage lockout threshold",+ "symbol": "VUVLO",+ "kind": "electrical",+ "unit": "V",+ "min": 2.6,+ "typ": 2.7,+ "max": 2.82,+ "conditions": "Falling input voltage",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Undervoltage lockout hysteresis",+ "symbol": "VUVLO",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": 180,+ "max": null,+ "conditions": "",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Thermal shutdown temperature",+ "symbol": "TSD",+ "kind": "electrical",+ "unit": "°C",+ "min": null,+ "typ": 160,+ "max": null,+ "conditions": "Rising temperature",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Thermal shutdown hysteresis",+ "symbol": "TSD",+ "kind": "electrical",+ "unit": "°C",+ "min": null,+ "typ": 20,+ "max": null,+ "conditions": "Falling temperature",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Input leakage current (EN)",+ "symbol": "ILKG_EN",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.01,+ "max": 1,+ "conditions": "EN = VIN or GND",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Power good threshold voltage, rising",+ "symbol": "VTH_PG",+ "kind": "electrical",+ "unit": "%VOUT",+ "min": 92,+ "typ": 95,+ "max": 98,+ "conditions": "Rising (%VOUT)",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Power good threshold voltage, falling",+ "symbol": "VTH_PG",+ "kind": "electrical",+ "unit": "%VOUT",+ "min": 87,+ "typ": 90,+ "max": 93,+ "conditions": "Falling (%VOUT)",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Power good output low voltage",+ "symbol": "VOL_PG",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.07,+ "max": 0.3,+ "conditions": "IPG = –2 mA",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Input leakage current (PG)",+ "symbol": "ILKG_PG",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": 1,+ "max": 400,+ "conditions": "VPG = 1.8 V",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "High-side MOSFET ON-resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 300,+ "max": 600,+ "conditions": "VIN ≥ 6 V",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "High-side MOSFET ON-resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 430,+ "max": null,+ "conditions": "VIN = 3 V",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Low-side MOSFET ON-resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 120,+ "max": 200,+ "conditions": "VIN ≥ 6 V",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Low-side MOSFET ON-resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 165,+ "max": null,+ "conditions": "VIN = 3 V",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "High-side MOSFET forward current limit",+ "symbol": "ILIMF",+ "kind": "electrical",+ "unit": "A",+ "min": 1.45,+ "typ": 1.95,+ "max": 2.45,+ "conditions": "VIN = 12 V, TJ = 25°C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Internal reference voltage",+ "symbol": "VREF",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": null,+ "conditions": "",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Pin leakage current (FB)",+ "symbol": "ILKG_FB",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": 5,+ "max": 400,+ "conditions": "TPS62160, VFB = 1.2 V",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Output voltage range (TPS62160)",+ "symbol": "VOUT",+ "kind": "electrical",+ "unit": "V",+ "min": 0.9,+ "typ": null,+ "max": 6,+ "conditions": "VIN ≥ VOUT",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Initial output voltage accuracy",+ "symbol": "",+ "kind": "tolerance",+ "unit": "%",+ "min": -3,+ "typ": null,+ "max": 3,+ "conditions": "PWM mode operation, VIN ≥ VOUT + 1 V",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Initial output voltage accuracy (power save mode)",+ "symbol": "",+ "kind": "tolerance",+ "unit": "%",+ "min": -3.5,+ "typ": null,+ "max": 4,+ "conditions": "Power save mode operation, COUT = 22 µF",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "DC output voltage load regulation",+ "symbol": "",+ "kind": "electrical",+ "unit": "%/A",+ "min": null,+ "typ": 0.05,+ "max": null,+ "conditions": "VIN = 12 V, VOUT = 3.3 V, PWM mode operation",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "DC output voltage line regulation",+ "symbol": "",+ "kind": "electrical",+ "unit": "%/V",+ "min": null,+ "typ": 0.02,+ "max": null,+ "conditions": "3 V ≤ VIN ≤ 17 V, VOUT = 3.3 V, IOUT = 0.5 A, PWM mode operation",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "Supply voltage VIN",+ "symbol": "VIN",+ "kind": "recommended_operating",+ "unit": "V",+ "min": 3,+ "typ": null,+ "max": 17,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Output voltage VOUT",+ "symbol": "VOUT",+ "kind": "recommended_operating",+ "unit": "V",+ "min": 0.9,+ "typ": null,+ "max": 6,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature",+ "symbol": "TJ",+ "kind": "recommended_operating",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Pin voltage range VIN",+ "symbol": "VIN",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Pin voltage range EN, SW (DC)",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Pin voltage range SW (AC)",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -2,+ "typ": null,+ "max": 24.5,+ "conditions": "less than 10ns",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Pin voltage range FB, PG, VOS",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": 7,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Power good sink current PG",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -65,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-ambient thermal resistance (DSG)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 61.8,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-case (top) thermal resistance (DSG)",+ "symbol": "RθJC(top)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 61.3,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-board thermal resistance (DSG)",+ "symbol": "RθJB",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 15.5,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-top characterization parameter (DSG)",+ "symbol": "ψJT",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 0.4,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-board characterization parameter (DSG)",+ "symbol": "ψJB",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 15.4,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-case (bottom) thermal resistance (DSG)",+ "symbol": "RθJC(bot)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 8.6,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ }+ ] } }, "variants": [],