component
TPS62067DSGR
Public Made by Adomby adom
Texas Instruments DC-DC Converters, WSON-8-EP(2x2). Datasheet-verified pinout, KiCad symbol/footprint/3D.
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tps62067dsgr: specified limits as data (metadata.characteristics, 46 rows from the datasheet)
2 files changed
+612
README.md+53@@ -27,6 +27,59 @@ TPS62067DSGR from Texas Instruments, in a WSON-8-EP(2x2). Pinout and pin descrip | Category | Power Management (PMIC) | | Pins | 9 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Supply voltage AVIN, PVIN | | -0.3 | | 7 | V | | 4 |+| Voltage EN, MODE, PG, FB | | -0.3 | | | V | | 4 |+| Voltage SW | | -0.3 | | 7 | V | | 4 |+| Current (sink) into PG | | | | 1 | mA | | 4 |+| Junction temperature | TJ | -40 | | 125 | °C | | 4 |+| Storage temperature | Tstg | -65 | | 150 | °C | | 4 |+| Supply voltage AVIN, PVIN | | 2.9 | | 6 | V | | 4 |+| Output current capability | | | | 2000 | mA | | 4 |+| Output voltage range for adjustable voltage | | 0.8 | | | V | | 4 |+| Effective inductance | L | 0.7 | 1 | 1.6 | µH | | 4 |+| Effective output capacitance | COUT | 4.5 | 10 | 22 | µF | | 4 |+| Operating junction temperature | TJ | -40 | | 125 | °C | | 4 |+| Junction-to-ambient thermal resistance | RθJA | | 65.3 | | °C/W | | 4 |+| Junction-to-case (top) thermal resistance | RθJC(top) | | 74.2 | | °C/W | | 4 |+| Junction-to-board thermal resistance | RθJB | | 35.4 | | °C/W | | 4 |+| Junction-to-top characterization parameter | ψJT | | 2.2 | | °C/W | | 4 |+| Junction-to-board characterization parameter | ψJB | | 36 | | °C/W | | 4 |+| Junction-to-case (bottom) thermal resistance | RθJC(bot) | | 12.8 | | °C/W | | 4 |+| Input voltage range | VIN | 2.9 | | 6 | V | | 5 |+| Operating quiescent current | IQ | | 18 | | µA | IOUT = 0 mA, device operating in PFM mode and device not switching | 5 |+| Shutdown current | ISD | | 0.1 | 1 | µA | EN = GND, current into AVIN and PVIN | 5 |+| Undervoltage lockout threshold (falling) | VUVLO | 1.73 | 1.78 | 1.83 | V | Falling | 5 |+| Undervoltage lockout threshold (rising) | VUVLO | 1.9 | 1.95 | 1.99 | V | Rising | 5 |+| High level input voltage | VIH | 1 | | 6 | V | 2.9 V ≤ VIN ≤ 6 V | 5 |+| Low level input voltage | VIL | 0 | | 0.4 | V | 2.9 V ≤ VIN ≤ 6 V | 5 |+| Input bias current | IIN | | 0.01 | 1 | µA | EN, mode tied to GND or AVIN | 5 |+| Power good threshold voltage (rising feedback voltage) | VTHPG | 93 | 95 | 98 | % | Rising feedback voltage | 5 |+| Power good threshold voltage (falling feedback voltage) | VTHPG | 87 | 90 | 92 | % | Falling feedback voltage | 5 |+| Output low voltage | VOL | | | 0.3 | V | IOUT = –1mA; must be limited by external pullup resistor | 5 |+| Leakage current into PG pin | ILKG | | | 100 | nA | V(PG) = 3.6V | 5 |+| Internal power good delay time | tPGDL | | 5 | | µs | | 5 |+| High-side MOSFET on-resistance | RDS(on) | | 120 | 180 | mΩ | VIN = 3.6 V | 5 |+| High-side MOSFET on-resistance | RDS(on) | | 95 | 150 | mΩ | VIN = 5 V | 5 |+| Low-side MOSFET on-resistance | RDS(on) | | 90 | 130 | mΩ | VIN = 3.6 V | 5 |+| Low-side MOSFET on-resistance | RDS(on) | | 75 | 100 | mΩ | VIN = 5 V | 5 |+| Forward current limit MOSFET (high-side and low-side) | ILIMF | 2300 | 2750 | 3300 | mA | 2.9 V ≤ VIN ≤ 6 V | 5 |+| Thermal shutdown | TSD | | 150 | | °C | Increasing junction temperature | 5 |+| Thermal shutdown hysteresis | | | 10 | | °C | Decreasing junction temperature | 5 |+| Oscillator frequency | fSW | 2.6 | 3 | 3.4 | MHz | 2.9 V ≤ VIN ≤ 6 V | 5 |+| Reference voltage | Vref | | 600 | | mV | | 5 |+| Feedback voltage PWM mode | VFB(PWM) | -1.5 | 0 | 1.5 | % | PWM operation, MODE = VIN, 2.9 V ≤ VIN ≤ 6 V, 0 mA load | 5 |+| Feedback voltage PFM mode (voltage positioning) | VFB(PFM) | | 1 | | % | Device in PFM mode, voltage positioning active | 5 |+| Load regulation | VFB | | -0.5 | | %/A | | 5 |+| Line regulation | | | 0 | | %/V | | 5 |+| Internal discharge resistor | R(Discharge) | 75 | 200 | 1450 | Ω | Activated with EN = GND, 2.9 V ≤ VIN ≤ 6 V, 0.8 ≤ VOUT ≤ 3.6 V | 5 |+| Start-up time | tSTART | | 500 | | µs | Time from active EN to reach 95% of VOUT | 5 |+ ## CAD (KiCad official) - Symbol: `TPS62067DSGR`
page.json+559@@ -171,6 +171,565 @@ "Package": "WSON-8-EP(2x2)", "Category": "Power Management (PMIC)", "Pins": "9"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "f9812a26ed207003",+ "rows": [+ {+ "name": "Supply voltage AVIN, PVIN",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": 7,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Voltage EN, MODE, PG, FB",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Voltage SW",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": 7,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Current (sink) into PG",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -65,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Supply voltage AVIN, PVIN",+ "symbol": "",+ "kind": "recommended_operating",+ "unit": "V",+ "min": 2.9,+ "typ": null,+ "max": 6,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Output current capability",+ "symbol": "",+ "kind": "recommended_operating",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 2000,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Output voltage range for adjustable voltage",+ "symbol": "",+ "kind": "recommended_operating",+ "unit": "V",+ "min": 0.8,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Effective inductance",+ "symbol": "L",+ "kind": "recommended_operating",+ "unit": "µH",+ "min": 0.7,+ "typ": 1,+ "max": 1.6,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Effective output capacitance",+ "symbol": "COUT",+ "kind": "recommended_operating",+ "unit": "µF",+ "min": 4.5,+ "typ": 10,+ "max": 22,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature",+ "symbol": "TJ",+ "kind": "recommended_operating",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-ambient thermal resistance",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 65.3,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-case (top) thermal resistance",+ "symbol": "RθJC(top)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 74.2,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-board thermal resistance",+ "symbol": "RθJB",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 35.4,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-top characterization parameter",+ "symbol": "ψJT",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 2.2,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-board characterization parameter",+ "symbol": "ψJB",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 36,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-case (bottom) thermal resistance",+ "symbol": "RθJC(bot)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 12.8,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Input voltage range",+ "symbol": "VIN",+ "kind": "electrical",+ "unit": "V",+ "min": 2.9,+ "typ": null,+ "max": 6,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Operating quiescent current",+ "symbol": "IQ",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 18,+ "max": null,+ "conditions": "IOUT = 0 mA, device operating in PFM mode and device not switching",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Shutdown current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.1,+ "max": 1,+ "conditions": "EN = GND, current into AVIN and PVIN",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Undervoltage lockout threshold (falling)",+ "symbol": "VUVLO",+ "kind": "electrical",+ "unit": "V",+ "min": 1.73,+ "typ": 1.78,+ "max": 1.83,+ "conditions": "Falling",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Undervoltage lockout threshold (rising)",+ "symbol": "VUVLO",+ "kind": "electrical",+ "unit": "V",+ "min": 1.9,+ "typ": 1.95,+ "max": 1.99,+ "conditions": "Rising",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "High level input voltage",+ "symbol": "VIH",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": null,+ "max": 6,+ "conditions": "2.9 V ≤ VIN ≤ 6 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Low level input voltage",+ "symbol": "VIL",+ "kind": "electrical",+ "unit": "V",+ "min": 0,+ "typ": null,+ "max": 0.4,+ "conditions": "2.9 V ≤ VIN ≤ 6 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Input bias current",+ "symbol": "IIN",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.01,+ "max": 1,+ "conditions": "EN, mode tied to GND or AVIN",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Power good threshold voltage (rising feedback voltage)",+ "symbol": "VTHPG",+ "kind": "electrical",+ "unit": "%",+ "min": 93,+ "typ": 95,+ "max": 98,+ "conditions": "Rising feedback voltage",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Power good threshold voltage (falling feedback voltage)",+ "symbol": "VTHPG",+ "kind": "electrical",+ "unit": "%",+ "min": 87,+ "typ": 90,+ "max": 92,+ "conditions": "Falling feedback voltage",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Output low voltage",+ "symbol": "VOL",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.3,+ "conditions": "IOUT = –1mA; must be limited by external pullup resistor",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Leakage current into PG pin",+ "symbol": "ILKG",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "V(PG) = 3.6V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Internal power good delay time",+ "symbol": "tPGDL",+ "kind": "electrical",+ "unit": "µs",+ "min": null,+ "typ": 5,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "High-side MOSFET on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 120,+ "max": 180,+ "conditions": "VIN = 3.6 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "High-side MOSFET on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 95,+ "max": 150,+ "conditions": "VIN = 5 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Low-side MOSFET on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 90,+ "max": 130,+ "conditions": "VIN = 3.6 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Low-side MOSFET on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 75,+ "max": 100,+ "conditions": "VIN = 5 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Forward current limit MOSFET (high-side and low-side)",+ "symbol": "ILIMF",+ "kind": "electrical",+ "unit": "mA",+ "min": 2300,+ "typ": 2750,+ "max": 3300,+ "conditions": "2.9 V ≤ VIN ≤ 6 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Thermal shutdown",+ "symbol": "TSD",+ "kind": "electrical",+ "unit": "°C",+ "min": null,+ "typ": 150,+ "max": null,+ "conditions": "Increasing junction temperature",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Thermal shutdown hysteresis",+ "symbol": "",+ "kind": "electrical",+ "unit": "°C",+ "min": null,+ "typ": 10,+ "max": null,+ "conditions": "Decreasing junction temperature",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Oscillator frequency",+ "symbol": "fSW",+ "kind": "electrical",+ "unit": "MHz",+ "min": 2.6,+ "typ": 3,+ "max": 3.4,+ "conditions": "2.9 V ≤ VIN ≤ 6 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reference voltage",+ "symbol": "Vref",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": 600,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Feedback voltage PWM mode",+ "symbol": "VFB(PWM)",+ "kind": "tolerance",+ "unit": "%",+ "min": -1.5,+ "typ": 0,+ "max": 1.5,+ "conditions": "PWM operation, MODE = VIN, 2.9 V ≤ VIN ≤ 6 V, 0 mA load",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Feedback voltage PFM mode (voltage positioning)",+ "symbol": "VFB(PFM)",+ "kind": "electrical",+ "unit": "%",+ "min": null,+ "typ": 1,+ "max": null,+ "conditions": "Device in PFM mode, voltage positioning active",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Load regulation",+ "symbol": "VFB",+ "kind": "electrical",+ "unit": "%/A",+ "min": null,+ "typ": -0.5,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Line regulation",+ "symbol": "",+ "kind": "electrical",+ "unit": "%/V",+ "min": null,+ "typ": 0,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Internal discharge resistor",+ "symbol": "R(Discharge)",+ "kind": "electrical",+ "unit": "Ω",+ "min": 75,+ "typ": 200,+ "max": 1450,+ "conditions": "Activated with EN = GND, 2.9 V ≤ VIN ≤ 6 V, 0.8 ≤ VOUT ≤ 3.6 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Start-up time",+ "symbol": "tSTART",+ "kind": "electrical",+ "unit": "µs",+ "min": null,+ "typ": 500,+ "max": null,+ "conditions": "Time from active EN to reach 95% of VOUT",+ "source_page": 5,+ "source": "datasheet"+ }+ ] } }, "variants": [],