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Contents

README

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TPS62067DSGR

Texas Instruments · DC-DC Converters · WSON-8-EP(2x2)

TPS62067DSGR from Texas Instruments, in a WSON-8-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 PGND power_in GND supply pin for the output stage power switching circuit.
2 SW output Switch pin connected to internal MOSFET switches operating at 3MHz; connect external inductor between this terminal and output capacitor.
3 AGND power_in Analog GND supply pin for the control circuit.
4 FB input Feedback pin for internal regulation loop; connect external resistor divider to set output voltage (0.8V to VIN) or connect directly to output capacitor for fixed voltage option.
5 EN input Enable pin that controls device operation; low forces shutdown mode with <1μA standby current and output capacitor discharge, high enables normal operation.
6 PG tri_state Power Good open-drain output pin; provides logic low when feedback voltage below 90% nominal or when EN is low, logic high when feedback voltage above 95% nominal with 5μs internal delay.
7 AVIN power_in Analog VIN power supply pin for control circuit; must be connected to PVIN and input capacitor with 2.9V to 6V input range.
8 PVIN power_in VIN power supply pin for output stage; input voltage range 2.9V to 6V supporting up to 2A output current.
9 PowerPAD power_in Exposed thermal pad for device GND connection; must be soldered to PCB land pattern for proper thermal dissipation (RθJA 65.3°C/W) and mechanical performance.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package WSON-8-EP(2x2)
Category Power Management (PMIC)
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage AVIN, PVIN -0.3 7 V 4
Voltage EN, MODE, PG, FB -0.3 V 4
Voltage SW -0.3 7 V 4
Current (sink) into PG 1 mA 4
Junction temperature TJ -40 125 °C 4
Storage temperature Tstg -65 150 °C 4
Supply voltage AVIN, PVIN 2.9 6 V 4
Output current capability 2000 mA 4
Output voltage range for adjustable voltage 0.8 V 4
Effective inductance L 0.7 1 1.6 µH 4
Effective output capacitance COUT 4.5 10 22 µF 4
Operating junction temperature TJ -40 125 °C 4
Junction-to-ambient thermal resistance RθJA 65.3 °C/W 4
Junction-to-case (top) thermal resistance RθJC(top) 74.2 °C/W 4
Junction-to-board thermal resistance RθJB 35.4 °C/W 4
Junction-to-top characterization parameter ψJT 2.2 °C/W 4
Junction-to-board characterization parameter ψJB 36 °C/W 4
Junction-to-case (bottom) thermal resistance RθJC(bot) 12.8 °C/W 4
Input voltage range VIN 2.9 6 V 5
Operating quiescent current IQ 18 µA IOUT = 0 mA, device operating in PFM mode and device not switching 5
Shutdown current ISD 0.1 1 µA EN = GND, current into AVIN and PVIN 5
Undervoltage lockout threshold (falling) VUVLO 1.73 1.78 1.83 V Falling 5
Undervoltage lockout threshold (rising) VUVLO 1.9 1.95 1.99 V Rising 5
High level input voltage VIH 1 6 V 2.9 V ≤ VIN ≤ 6 V 5
Low level input voltage VIL 0 0.4 V 2.9 V ≤ VIN ≤ 6 V 5
Input bias current IIN 0.01 1 µA EN, mode tied to GND or AVIN 5
Power good threshold voltage (rising feedback voltage) VTHPG 93 95 98 % Rising feedback voltage 5
Power good threshold voltage (falling feedback voltage) VTHPG 87 90 92 % Falling feedback voltage 5
Output low voltage VOL 0.3 V IOUT = –1mA; must be limited by external pullup resistor 5
Leakage current into PG pin ILKG 100 nA V(PG) = 3.6V 5
Internal power good delay time tPGDL 5 µs 5
High-side MOSFET on-resistance RDS(on) 120 180 mΩ VIN = 3.6 V 5
High-side MOSFET on-resistance RDS(on) 95 150 mΩ VIN = 5 V 5
Low-side MOSFET on-resistance RDS(on) 90 130 mΩ VIN = 3.6 V 5
Low-side MOSFET on-resistance RDS(on) 75 100 mΩ VIN = 5 V 5
Forward current limit MOSFET (high-side and low-side) ILIMF 2300 2750 3300 mA 2.9 V ≤ VIN ≤ 6 V 5
Thermal shutdown TSD 150 °C Increasing junction temperature 5
Thermal shutdown hysteresis 10 °C Decreasing junction temperature 5
Oscillator frequency fSW 2.6 3 3.4 MHz 2.9 V ≤ VIN ≤ 6 V 5
Reference voltage Vref 600 mV 5
Feedback voltage PWM mode VFB(PWM) -1.5 0 1.5 % PWM operation, MODE = VIN, 2.9 V ≤ VIN ≤ 6 V, 0 mA load 5
Feedback voltage PFM mode (voltage positioning) VFB(PFM) 1 % Device in PFM mode, voltage positioning active 5
Load regulation VFB -0.5 %/A 5
Line regulation 0 %/V 5
Internal discharge resistor R(Discharge) 75 200 1450 Ω Activated with EN = GND, 2.9 V ≤ VIN ≤ 6 V, 0.8 ≤ VOUT ≤ 3.6 V 5
Start-up time tSTART 500 µs Time from active EN to reach 95% of VOUT 5

CAD (KiCad official)

  • Symbol: TPS62067DSGR
  • Footprint: Package_SON:WSON-8-1EP_2x2mm_P0.5mm_EP0.9x1.6mm
  • 3D model: WSON-8-EP(2x2) (KiCad packages3D, STEP)
  • 3D model files: tps62067dsgr-etched.step / tps62067dsgr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps62067dsgr.step / tps62067dsgr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (30 pp, sha256 f9812a26ed207003, retrieved 2026-09-23, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF